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Infineon
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| Part No. |
SGW15N120
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| OCR Text |
...0A 30A 20A 10A 0A 10Hz TC=110C
100a
SGB15N120 SGW15N120
tp=2s 15s
Ic
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50s...800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0... |
| Description |
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,32A I(C),TO-247AC
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| File Size |
341.89K /
12 Page |
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it Online |
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Fuji Semiconductors, Inc.
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| Part No. |
2SK2648
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| OCR Text |
...0V Tch=25C IF=IDR VGS=0V -di/dt=100a/s Tch=25C Tch=25C Tch=125C
Min.
800 3.5
Typ.
Max.
Units
V V A mA nA S pF
4.0 4.5 10 500 0.2 1.0 10 100 1.28 1.50 3.0 6.0 1200 1800 180 270 90 140 30 50 110 170 100 150 65 100 9 1.0 1.5 ... |
| Description |
TRANSISTOR,MOSFET,N-CHANNEL,800v V(BR)DSS,9A I(D),TO-247VAR
From old datasheet system
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| File Size |
69.48K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
RF1S4N100SM RFP4N100 FN2457
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| OCR Text |
...SD = 4.3A ISD = 3.9A, dISD/dt = 100a/s TEST CONDITIONS MIN TYP MAX 1.8 1000 UNITS V ns
4-529
RFP4N100, RF1S4N100SM Typical Performance Curves
1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 ID, DRAIN CURRENT (A) 0 25 125 50 75 100 TA , AMBI... |
| Description |
4.3A/ 1000V/ 3.500 Ohm/ High Voltage/ N-Channel Power MOSFETs
4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs
From old datasheet system
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| File Size |
45.56K /
6 Page |
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it Online |
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Fairchild Semiconductor, Corp.
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| Part No. |
SSP3N80A
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| OCR Text |
...=3A,VGS=0V TJ=25 C,IF=3A diF/dt=100a/s
4 O
Notes ; 1 O Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature 2 O L=50mH, I AS=3A, VDD=50V, RG=27, Starting T J =25 C _ _ _ 3 O ISD < 3A, di/dt <100a/ s, VDD <BVDSS , S... |
| Description |
ACB 2C 2#16S SKT PLUG 3 A, 800 V, 4.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Advanced Power MOSFET
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| File Size |
360.08K /
7 Page |
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it Online |
Download Datasheet |
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Sanyo
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| Part No. |
2SA1831 0165
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| OCR Text |
...esistance Symbol V(BR)CBO IC=(-)100a, IE=0 V(BR)CEO IC=(-)1mA, RBE= V(BR)EBO Rth(j-c) IE=(-)100a, IC=0 Junction-Case Conditions Ratings min -800 -800 -7 8.3 typ max Unit V V V
C/W
No.3686-2/3
2SA1831
Specifications of any and all ... |
| Description |
PNPTriple Diffused Planar Silicon Transistors High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
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| File Size |
90.56K /
3 Page |
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it Online |
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