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Continental Device India Limited
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Part No. |
CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB949P CFB949AR CFD1275Q
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Description |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP 2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275 2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR 2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949 2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
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File Size |
147.20K /
3 Page |
View
it Online |
Download Datasheet
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Ericsson Microelectronics ERICSSON[Ericsson]
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Part No. |
PTF10009
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Description |
85 watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor 85 watts, 1.0 GHz GOLDMOS Field Effect Transistor 85 watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor 85 watts, 1.0 GHz GOLDMOSField Effect Transistor 85 watts/ 1.0 GHz GOLDMOS Field Effect Transistor
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File Size |
227.70K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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