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  10.2a Datasheet PDF File

For 10.2a Found Datasheets File :: 47027    Search Time::2.844ms    
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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...gh-speed diode incorporated. 10.2 4.5 1.3 11.5 1.6 20.9 1.2 11.0 9.4 0.8 8.8 0.4 1 2 3 2.7 1 : Gate 2 ...2A ID=--2A, VGS=--10V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circu...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ484

HITACHI[Hitachi Semiconductor]
Part No. 2SJ484
OCR Text ...Notes: 1. PW 100s, duty cycle 10 % 2. When using aluminium ceramic board (12.5 x 20 x 0.7 mm) 2 2SJ484 Electrical Characteristics (...2A, VGS = 0 I F = -2A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS ...
Description Silicon P-Channel MOS FET High Speed Power Switching

File Size 42.55K  /  9 Page

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    2SJ485 2SJ485TP-FA

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ485 2SJ485TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2504 No.6434-1/4 2SJ485 Specificati...2A ID=-2A, VGS=-10V ID=-2A, VGS=-4V VDS=-20V, f=1MHz VDS=-20V, f=1MHz VDS=-20V, f=1MHz See specified...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4A I(D) | TO-252VAR
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 42.21K  /  4 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82200 TS IM TA-2305 No.6589-1/4 2SJ499 Specifications...2A, VGS=--4V VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See sp...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ...970 Conditions Ratings min -30 -10 10 -2.5 typ max Unit V A A V mS m m Marking : FM Continued on next page. Any and all SANYO produ...2A ID=-0.5A DC op Switching Time, SW Time - ns 5 3 2 Drain Current, ID - A <100s 1m s 1...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ...ny TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 31000TS (KOTO) TA-2512 No.5932-1/4 2SJ503 Specificati...2A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit See specif...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ...stg Note2 Note1 Ratings -20 10 -2 -4 -2 1 150 -55 to +150 Unit V V A A A W C C 1. PW 100s, duty cycle 10 % 2. When using alumini...2A, VGS = 0 I F = -2A, VGS = 0 diF/ dt =50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VDS =...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ518

HITACHI[Hitachi Semiconductor]
Part No. 2SJ518
OCR Text ... -- -- 0.35 0.45 2.0 220 110 35 10 11 45 30 -1.05 50 Max -- -- -10 10 -2.0 0.46 0.63 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I D = -2A, VGS = 0 I F = -2A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10m...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 46.74K  /  9 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ...w) Conditions Ratings -20 10 -2 -8 1.5 3.5 150 -55 to +150 Unit V V A A W W C C Mounted on a ceramic board (250mm2x 0.8mm) Tc=...2A VDS=-10V, VGS=-10V, ID=-2A VDS=-10V, VGS=-10V, ID=-2A IS=-2A, VGS=0 Conditions Ratings min typ 18...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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    2SJ579

SANYO[Sanyo Semicon Device]
Part No. 2SJ579
OCR Text ...150 Conditions Ratings min -60 -10 10 -2.4 typ max Unit V A A V S m m Marking : JQ Continued on next page. Any and all SANYO produc...2A VDS=-10V, VGS=-10V, ID=-1.2A VDS=-10V, VGS=-10V, ID=-1.2A IS=-1.2A, VGS=0 Conditions Ratings min ...
Description Ultrahigh-Speed Switching Applications

File Size 41.45K  /  4 Page

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