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BFP181W LT1024A F5Y954 CY14B108 T154MB6 645ETT 70HA120 A1393
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  0.42m Datasheet PDF File

For 0.42m Found Datasheets File :: 258    Search Time::3.953ms    
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    SPS5020FT150M SPS5020FT100M SPS5020FT1R0N SPS5020FT1R2N SPS5020FT1R5N SPS5020FT220M SPS5020FT2R2N SPS5020FT330M SPS5020F

Superworld Electronics
Part No. SPS5020FT150M SPS5020FT100M SPS5020FT1R0N SPS5020FT1R2N SPS5020FT1R5N SPS5020FT220M SPS5020FT2R2N SPS5020FT330M SPS5020FT3R3N SPS5020FT3R9N SPS5020FT4R7M SPS5020FT6R8M
OCR Text ... (e) coating : powder coating 2.0 max. a b c 2.0 typ. de 1.1 typ. 5.0 0.2 5.0 0.2 (c) powder coating type (a) series code (b) dimension cod...42m 3.6 2.80 0.1v/1m sps5020ft3r3n 3.330% 61m 3.2 2.50 0.1v/1m sps5020ft3r9n 3.930% 74m 3.2 2.30 0.1...
Description Low Profile Power Inductors

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    AO460409

Alpha & Omega Semiconductors
Alpha & Omega Semiconductor...
Part No. AO460409
OCR Text ...l min typ max units bv dss 30 v 0.004 1 t j =55c 5 i gss 100 na v gs(th) 1 1.9 3 v i d(on) 20 a 22.5 28 t j =125c 31.3 38 34.5 42 m w g fs 10 15.4 s v sd 0.76 1 v i s 3 a c iss 680 820 pf c oss 102 pf c rss 77 pf r g 1.2 2 w q g (10v) 13.84...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 334.99K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4604
OCR Text ...34.5 42 m ? g fs 10 15.4 s v sd 0.76 1 v i s 3a c iss 680 pf c oss 102 pf c rss 77 pf r g 3 ? q g (10v) 13.84 nc q g (4.5v) 6.74 nc q gs 1.82 nc q gd 3.2 nc t d(on) 4.6 ns t r 4.1 ns t d(off) 20.6 ns t f 5.2 ns t rr 16.5 ns q rr 7.8 nc body...
Description Complementary Enhancement Mode Field Effect Transistor

File Size 685.66K  /  9 Page

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    AO4606 AO460612

Alpha & Omega Semiconductors
Part No. AO4606 AO460612
OCR Text ...i d t a =25c avalanche energy l=0.1mh c 26 -30 v -6.5 c/w c v w -5.3 -30 mj max 30 10 5 2 units 23 aa 1.3 -55 to 150 gate-source voltage maximum junction-to-ambient a thermal characteristics 20 t a =70c avalanche current c maximum juncti...
Description 30V Complementary MOSFET

File Size 543.26K  /  9 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4607
OCR Text ...ttky vds (v) = 30v, if = 3a, vf<0.5v@1a the ao4607 uses advanced trench technology mosfets to provide excelle n r ds(on) and low gate charge. the complementary mosfets may be used in inverter and other applications. a schottky diode is...
Description Complementary Enhancement Mode Field Effect Transistor

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4611
OCR Text ... 34 42 22 30 m w g fs 27 s v sd 0.74 1 v i s 3 a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 w q g (10v) 47.6 58 nc q g (4.5v) 24.2 30 nc q gs 6 nc q gd 14.4 nc t d(on) 7.6 ns t r 5 ns t d(off) 28.9 ns t f 5.5 ns t rr 33.2 40 ...
Description 60V Dual P N-Channel MOSFET

File Size 595.48K  /  7 Page

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    AO4611 AO461110

Alpha & Omega Semiconductors
Part No. AO4611 AO461110
OCR Text ... 34 42 22 30 m w g fs 27 s v sd 0.74 1 v i s 3 a c iss 1920 2300 pf c oss 155 pf c rss 116 pf r g 0.65 0.8 w q g (10v) 47.6 58 nc q g (4.5v) 24.2 30 nc q gs 6 nc q gd 14.4 nc t d(on) 7.6 ns t r 5 ns t d(off) 28.9 ns t f 5.5 ns t rr 33.2 40 ...
Description 60V Dual P N-Channel MOSFET

File Size 214.61K  /  7 Page

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    AO4812 AO481211

Alpha & Omega Semiconductors
ALPHA AND OMEGA SEMICONDUCTOR
Part No. AO4812 AO481211
OCR Text ...ation b p d avalanche energy l=0.1mh c t a =70c 1.3 units thermal characteristics parameter typ max the ao4812 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficie...
Description 30V Dual N-Channel MOSFET
6000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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    AOC2800

Alpha & Omega Semiconductors
Part No. AOC2800
OCR Text ... pw <300 s pulses, duty cycle 0.5% max units source-source voltage source current (dc) note1 6 vv w junction and storage temperature range a 1.3 -55 to 150 60 power dissipation note1 t a =25c c maximum parameter absolute maximum ratings...
Description Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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    MTP5210F3

Cystech Electonics Corp.
Part No. MTP5210F3
OCR Text ... repetitive avalanche energy@ l=0.05mh (note 2) t c =25 c 100 power dissipation p d w t c =100 c 40 operating junction and storage temperature tj, tstg -55~+150 c note : 1. pulse width limited by...
Description P-Channel Enhancement Mode Power MOSFET

File Size 237.02K  /  8 Page

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