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  0.10-1.50ma Datasheet PDF File

For 0.10-1.50ma Found Datasheets File :: 21966    Search Time::4.907ms    
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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ...s -60 -80 -60 -80 -6 -5 -3 15 2.0 150 -55 to +150 Unit V 2.50.2 s Absolute Maximum Ratings 13.00.2 4.20.2 High forward curren...10.00.2 1.0 90 1.20.1 C1.0 2.250.2 18.00.5 Solder Dip 0.350.1 0.650.1 1.050.1 0.55...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...150 Unit V 18.00.5 Solder Dip 0.350.1 5.00.1 10.00.2 1.0 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD2137 2SD2137A 2SD2137 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.00.2 4.20.2 90 2.50.2...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SJ501

SANYO[Sanyo Semicon Device]
Part No. 2SJ501
OCR Text ...sions unit:mm 2091A [2SJ501] 0.5 0.4 3 0.16 0 to 0.1 0.5 1 0.95 0.95 2 1.9 2.9 1.5 2.5 Specifications Absolute Max...10 -0.5 -2.0 0.25 150 -55 to +150 Unit V V A A W C C Electrical Characteristics at Ta = 25C P...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 237.49K  /  4 Page

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    2SJ575

Hitachi Semiconductor
Part No. 2SJ575
OCR Text ... Conditions I D = -100 A, VGS = 0 I G = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = -30 V, VGS = 0 I D = -10A, VDS = -5 V ID = -50 mA,VGS = -10 V Note 3 ID = -50 mA,VGS = -4 V Note 3 ID = -50 mA, V DS = -10 V Note 3 Gate to source cutoff v...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.55K  /  8 Page

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    2SJ587

HITACHI[Hitachi Semiconductor]
Part No. 2SJ587
OCR Text ...S I GSS I DSS Min -20 10 -- -- -0.8 -- -- 32.5 -- -- -- -- -- -- -- Typ -- -- -- -- -- 4.1 6.0 50 13 10 1.8 22 48 50 60 Max -- -- 5 -1 -1.8 5.0 8.5 -- -- -- -- -- -- -- -- Unit V V A A V mS pF pF pF ns ns ns ns Test Conditions I D = -100 ...
Description Silicon P Channel MOS FET High Speed Switching

File Size 38.71K  /  8 Page

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    4N25GV 4N25V 4N35V 4N35GV 4N25V35V 4N25VSERIES

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
Part No. 4N25GV 4N25V 4N35V 4N35GV 4N25V35V 4N25VSERIES
OCR Text ...D Thickness through insulation 0.75 mm General features: VIORM = 600 VRMS D FIMKO (SETI): EN 60950, Certificate number 12399 D Under...10 ms Tamb 25C Output (Detector) Parameter Collector emitter voltage Emitter collector voltage ...
Description Dual/Triple Ultra-Low-Voltage SOT23 &#181;P Supervisory Circuits 与光电晶体管光电耦合器输
From old datasheet system
Optocoupler with Phototransistor Output

File Size 147.10K  /  9 Page

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    ADM660 ADM660AN ADM660AR ADM660ARU ADM8660AR ADM8660AN ADM8660

AD[Analog Devices]
Part No. ADM660 ADM660AN ADM660AR ADM660ARU ADM8660AR ADM8660AN ADM8660
OCR Text ...M8660) 2.2 F or 10 F Capacitors 0.3 V Drop at 30 mA Load +1.5 V to +7 V Supply Low Power CMOS: 600 A Quiescent Current Selectable Charge Pump Frequency (25 kHz/120 kHz) Pin Compatible Upgrade for MAX660, MAX665, ICL7660 Available in 16-Lead...
Description CMOS Switched-Capacitor Voltage Converters

File Size 105.88K  /  8 Page

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