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				ONSEMI[ON Semiconductor]
Part No.	NLAS325US NLAS325 NLAS325-D
OCR Text	... 8 package. The use of advanced 0.6 CMOS process, improves the RON resistance considerably compared to older higher voltage technologies. http://onsemi.com MARKING DIAGRAM 8 8 1 US8 US SUFFIX CASE 493 * * * * * * * * * * * On Resis...
Description	Dual SPST Analog Switch, Low Voltage, Single Supply Dual SPST Analog Switch Low Voltage Single Supply
File Size	115.06K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
OCR Text	...age Drain Gate Voltage (RGS = 1.0 M ) Continuous Drain Current @ TC = 25C 2 Continuous Drain Current @ TC = 100C 2 Pulsed Drain Current1 Max. Power Dissipation @ TC = 25C Max. Power Dissipation @ TC = 100C Linear Derating Factor Junction-to...
Description	High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量） HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on) 500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package 200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
File Size	18.07K / 2 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PIP3203-A_1 PIP3203-A PIP3203-A127
OCR Text	...on-repetitive clamping energy 0.1, tp = 300 s IL = 2 A Tj = 150C prior to turn-off 100 mJ -5 -50 5 50 mA mA to limit input, status currents 3.2 k 16 32 V V during soldering Tmb 112C Tmb 25C CONDITIONS MIN. 0 -55 MAX. 50 8.5 48 175 150 2...
Description	TOPFET high side switch 24 A BUF OR INV BASED PRPHL DRVR, PSFM5 From old datasheet system 3.6 A BUF OR INV BASED PRPHL DRVR, PSFM5 PLASTIC, TO-220, SOT-263B-01, SEP-5
File Size	42.29K / 8 Page	View it Online	Download Datasheet

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