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    MC14538 MC14538BCL MC14538BCP MC14538BDW MC14538B_D ON0916 MC14538B

MOTOROLA INC
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MC14538 MC14538BCL MC14538BCP MC14538BDW MC14538B_D ON0916 MC14538B
OCR Text ...tput pulse over a wide range of widths, the duration and accuracy of which are determined by the external timing components, CX and RX. * Unlimited Rise and Fall Time Allowed on the A Trigger Input * Pulse Width Range = 10 s to 10 s * Latch...
Description UltraLow-Supply Current/Supply-Voltage Supervisory Circuit 6-SOT-23 -40 to 85
Dual Precision Retriggerable/Resettable Monostable Multivibrator
ORDERING INFORMATION
From old datasheet system
DUAL PRECISION RETRIGGERABLE / RESETTABLE MONOSTABLE MULTIVIBRATOR

File Size 272.10K  /  10 Page

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    SPANSION LLC
Part No. MBM29LV160B-90PBT-SF2-E1
OCR Text ...tically times the program pulse widths and verifies proper cell margins. typically, each sector can be programmed and verified in about 0.5 seconds. erase is accomplished by executing the erase command sequence. this will invoke the embed...
Description 1M X 16 FLASH 3V PROM, 90 ns, PBGA48

File Size 457.61K  /  60 Page

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    SPANSION LLC
Part No. MBM29FS12DH15PBT
OCR Text ...tically times the program pulse widths and verifies proper cell margins. typically, each 32k words sector can be programmed and verified in about 0.3 second. erase is accomplished by executing the erase command sequence. this will invoke th...
Description BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT

File Size 390.66K  /  84 Page

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    AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F010-120DGI1 AM29F010-120DPC1 AM29F010-120DPE1 AM29F010-120DPI1 AM29F01

ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
Part No. AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F010-120DGI1 AM29F010-120DPC1 AM29F010-120DPE1 AM29F010-120DPI1 AM29F010-120DTC1 AM29F010-120DTE1 AM29F010-120DTI1 AM29F010-120DWC1 AM29F010-120DWE1 AM29F010-120DWI1 AM29F010-9 AM29F010-90DGC1 AM29F010-90DWI1 AM29F010-90DGE1 AM29F010-90DGI1 AM29F010-90DPC1 AM29F010-90DPE1 AM29F010-90DPI1 AM29F010-90DTC1 AM29F010-90DTE1 AM29F010-90DTI1 AM29F010-90DWC1 AM29F010-90DWE1 AM29F010B-90DTC1 AM29F010-120DTI AM29F010B-90DTI1 AM29F010B-90DPI1 AM29F010-120DTC AM29F010B-90DPC1 AM29F010-120DPC AM29F010B-90DTE1 AM29F010B-90DGI1
OCR Text ...tically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array...
Description 1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1

File Size 55.30K  /  8 Page

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    AM29F010 AM29F010-120EC AM29F010-120ECB AM29F010-120EE AM29F010-120EEB AM29F010-120EI AM29F010-120EIB AM29F010-120FC AM2

AMD[Advanced Micro Devices]
Part No. AM29F010 AM29F010-120EC AM29F010-120ECB AM29F010-120EE AM29F010-120EEB AM29F010-120EI AM29F010-120EIB AM29F010-120FC AM29F010-120FCB AM29F010-120FE AM29F010-120FEB AM29F010-120FI AM29F010-120FIB AM29F010-120JC AM29F010-120JCB AM29F010-120JE AM29F010-120JEB AM29F010-120JI AM29F010-120JIB AM29F010-120PC AM29F010-120PCB AM29F010-120PE AM29F010-120PEB AM29F010-120PI AM29F010-120PIB AM29F010-45EC AM29F010-45ECB AM29F010-45EE AM29F010-45EEB AM29F010-45EI AM29F010-45EIB AM29F010-45FC AM29F010-45FCB AM29F010-45FE AM29F010-45FEB AM29F010-45FI AM29F010-45FIB AM29F010-45JC AM29F010-45JCB AM29F010-45JE AM29F010-45JEB AM29F010-45JI AM29F010-45JIB AM29F010-45PC AM29F010-45PCB AM29F010-45PE AM29F010-45PEB AM29F010-45PI AM29F010-45PIB AM29F010-55EC AM29F010-55ECB AM29F010-55EE AM29F010-55EEB AM29F010-55EI AM29F010-55EIB AM29F010-55FC AM29F010-55FCB AM29F010-55FE AM29F010-55FEB AM29F010-55FI AM29F010-55FIB AM29F010-55JC AM29F010-55JCB AM29F010-55JE AM29F010-55JEB AM29F010-55JI AM29F010-55JIB AM29F010-55PC AM29F010-55PCB AM29F010-55PE AM29F010-55PEB AM29F010-55PI AM29F010-55PIB AM29F010-70EC AM29F010-70ECB AM29F010-70EE AM29F010-70EEB AM29F010-70EI AM29F010-70EIB AM29F010-70FC AM29F010-70FCB AM29F01
OCR Text ...tically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array...
Description 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

File Size 177.41K  /  31 Page

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    SPANSION LLC
Part No. MBM29FS12DH12PBT
OCR Text ...tically times the program pulse widths and verifies proper cell margins. typically, each 32k words sector can be programmed and verified in about 0.3 second. erase is accomplished by executing the erase command sequence. this will invoke th...
Description 8M X 16 FLASH 1.8V PROM, 55 ns, PBGA80

File Size 390.43K  /  85 Page

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    LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70U LC35256FT LC35256FT-55U FSYE913A0D3

Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70U LC35256FT LC35256FT-55U FSYE913A0D3
OCR Text ...nimum value is -3.0 V for pulse widths under 30 ns. I/O Capacitances at Ta = 25C, f = 1 MHz Parameter I/O pin capacitance Input pin capacitance Symbol CI/O CI VI/O = 0 V VIN = 0 V Conditions Ratings min typ 6 6 max 10 10 Unit pF pF N...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system

File Size 48.42K  /  7 Page

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    SPANSION LLC
Part No. MBM29LV002TC-70PTN-E1
OCR Text ...tically times the program pulse widths and verifies proper cell margin. typically, each sector can be programmed and verified in about 0.5 seconds. erase is accomplished by executing the erase comm and sequence. this will invoke the embed...
Description 256K X 8 FLASH 3V PROM, 70 ns, PDSO40

File Size 375.45K  /  52 Page

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    SPANSION LLC
Part No. SPANSIONLLC-AM29LV160DB-90FE AM29LV160DB-90EK
OCR Text ...tically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili - tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executin...
Description 1M X 16 FLASH 3V PROM, 90 ns, PDSO48

File Size 914.57K  /  51 Page

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