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SPANSION LLC
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Part No. |
MBM29LV160B-90PBT-SF2-E1
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OCR Text |
...tically times the program pulse widths and verifies proper cell margins. typically, each sector can be programmed and verified in about 0.5 seconds. erase is accomplished by executing the erase command sequence. this will invoke the embed... |
Description |
1M X 16 FLASH 3V PROM, 90 ns, PBGA48
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File Size |
457.61K /
60 Page |
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it Online |
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SPANSION LLC
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Part No. |
MBM29FS12DH15PBT
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OCR Text |
...tically times the program pulse widths and verifies proper cell margins. typically, each 32k words sector can be programmed and verified in about 0.3 second. erase is accomplished by executing the erase command sequence. this will invoke th... |
Description |
BURST MODE FLASH MEMORY CMOS 128M (8M X 16) BIT
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File Size |
390.66K /
84 Page |
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ADVANCED MICRO DEVICES INC PROM Advanced Micro Devices, Inc. AMD[Advanced Micro Devices]
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Part No. |
AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F010-120DGI1 AM29F010-120DPC1 AM29F010-120DPE1 AM29F010-120DPI1 AM29F010-120DTC1 AM29F010-120DTE1 AM29F010-120DTI1 AM29F010-120DWC1 AM29F010-120DWE1 AM29F010-120DWI1 AM29F010-9 AM29F010-90DGC1 AM29F010-90DWI1 AM29F010-90DGE1 AM29F010-90DGI1 AM29F010-90DPC1 AM29F010-90DPE1 AM29F010-90DPI1 AM29F010-90DTC1 AM29F010-90DTE1 AM29F010-90DTI1 AM29F010-90DWC1 AM29F010-90DWE1 AM29F010B-90DTC1 AM29F010-120DTI AM29F010B-90DTI1 AM29F010B-90DPI1 AM29F010-120DTC AM29F010B-90DPC1 AM29F010-120DPC AM29F010B-90DTE1 AM29F010B-90DGI1
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OCR Text |
...tically times the program pulse widths and verifies proper cell margin. Device erasure occurs by executing the erase command sequence. This invokes the Embedded Erase algorithm--an internal algorithm that automatically preprograms the array... |
Description |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30 Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30 LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1 1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
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File Size |
55.30K /
8 Page |
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SPANSION LLC
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Part No. |
MBM29FS12DH12PBT
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OCR Text |
...tically times the program pulse widths and verifies proper cell margins. typically, each 32k words sector can be programmed and verified in about 0.3 second. erase is accomplished by executing the erase command sequence. this will invoke th... |
Description |
8M X 16 FLASH 1.8V PROM, 55 ns, PBGA80
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File Size |
390.43K /
85 Page |
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it Online |
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SPANSION LLC
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Part No. |
MBM29LV002TC-70PTN-E1
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OCR Text |
...tically times the program pulse widths and verifies proper cell margin. typically, each sector can be programmed and verified in about 0.5 seconds. erase is accomplished by executing the erase comm and sequence. this will invoke the embed... |
Description |
256K X 8 FLASH 3V PROM, 70 ns, PDSO40
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File Size |
375.45K /
52 Page |
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it Online |
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SPANSION LLC
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Part No. |
SPANSIONLLC-AM29LV160DB-90FE AM29LV160DB-90EK
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OCR Text |
...tically times the program pulse widths and verifies proper cell margin. the unlock bypass mode facili - tates faster programming times by requiring only two write cycles to program data instead of four. device erasure occurs by executin... |
Description |
1M X 16 FLASH 3V PROM, 90 ns, PDSO48
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File Size |
914.57K /
51 Page |
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it Online |
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