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transistor-60v Datasheet PDF File

For transistor-60v Found Datasheets File :: 3531 Search Time::1.36ms
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				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STD12NF06 STD12NF06T4 STD12NF06-1
OCR Text	...ripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHE...
Description	N-CHANNEL 60V - 0.08 OHM - 12A IPAK/DPAK STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET II POWER MOSFET N-CHANNEL POWER MOSFET
File Size	441.94K / 10 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STD30NE06L 6044 STD30NE06LT4
OCR Text	...ip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s H...
Description	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| TO-252AA 晶体管\| MOSFET的\| N沟道\| 60V的五（巴西）直\| 30A条（丁）\|52AA N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET From old datasheet system
File Size	84.89K / 8 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STD30NE06 6056
OCR Text	...ip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH ...
Description	From old datasheet system N - CHANNEL 60V - 0.025 ohm - 30A - DPAK STripFET POWER MOSFET
File Size	47.29K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD30NF06L STD30NF06L-1 STD30NF06LT4
OCR Text	...ip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEM...
Description	N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET N-CHANNEL 60V 0.022 OHM 35A DPAK / IPAK STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET POWER MOSFET N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET⑩ POWER MOSFET
File Size	460.55K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD30NF06 STD30NF06T4
OCR Text	...ripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHE...
Description	N-CHANNEL 60V - 0.020 OHM - 28A IPAK/DPAK STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET II POWER MOSFET N-CHANNEL 60V - 0.020 ohm - 28A IPAK/DPAK STripFET⑩ II POWER MOSFET
File Size	456.33K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	STD35NF06L
OCR Text	...ip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SO...
Description	N-CHANNEL 60V 0.014 OHM 35A DPAK STRIPFET II MOSFET N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFETII MOSFET
File Size	121.99K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD35NF06
OCR Text	...ip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SO...
Description	N-CHANNEL 60V 0.018 OHM 55A - DPAK - STRIPFET II POWER MOSFET N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFETII MOSFET N-CHANNEL 60V - 0.018ohm - 35A DPAK STripFET⑩II MOSFET
File Size	440.08K / 9 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZX5T851G ZX5T851GTA ZX5T851GTC
OCR Text	TRANSISTOR IN SOT223 SUMMARY BVCEO = 60V : RSAT = 35m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC c...
Description	NPN Generation 5 Transistors in SOT223 60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
File Size	118.61K / 6 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZX5T951G ZX5T951GTA ZX5T951GTC
OCR Text	TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-...
Description	60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
File Size	120.21K / 6 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors] Diodes Incorporated
Part No.	ZXTD4591E6 ZXTD4591E6TA ZXTD4591E6TC ZXTD4591E6-15
OCR Text	... JULY 2000 2 ZXTD4591E6 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Bre...60V V EB =-4V V CES =-60V I C =-500mA, I B =-50mA* I C =-1A, I B =-100mA* I C =-1A, I B =-100mA* I C...
Description	DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS
File Size	161.10K / 7 Page	View it Online	Download Datasheet

For transistor-60v Found Datasheets File :: 3531 Search Time::1.36ms
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