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IXYS Corporation
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| Part No. |
IXTH24P20NBSP IXTH24P20
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| OCR Text |
..., VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 4.7 (External) 29 68 28 150 V GS = -10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 36 70 0.42 0.25 S pF pF pF ns ...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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| Description |
Standard Power MOSFET
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| File Size |
78.10K /
2 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120D_D ON1933 MGY25N120D
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
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| File Size |
167.51K /
6 Page |
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ONSEMI[ON Semiconductor]
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| Part No. |
MGY25N120_D ON1934 MGY25N120
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| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...187 0.087 0.102 0.122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
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| File Size |
149.81K /
5 Page |
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it Online |
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ADPOW
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| Part No. |
APT12057JL
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| OCR Text |
... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode)
2
ns
MAX
uNIT Amps Volts ns C
19 76 1.3
...187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
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| Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
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| File Size |
48.61K /
2 Page |
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it Online |
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IXYS, Corp.
IXYS[IXYS Corporation]
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| Part No. |
IXFX24N100 IXFK24N100F IXFK24N100 IXFKB24N100 IXFKB24N100F IXFX24N100F
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| OCR Text |
...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns
...187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
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| Description |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
HiPerRF Power MOSFETs 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
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| File Size |
98.12K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXGN200N60 IXGN200N60B
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| OCR Text |
...C, 1 ms VGE = 15 V, TVJ = 125C, RG = 2.4 W Clamped inductive load, L = 30 mH TC = 25C
Maximum Ratings 600 600 20 30 200 120 400 ICM = 200...187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2
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| Description |
HiPerFASTTM IGBT
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| File Size |
66.96K /
2 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXFN340N06
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| OCR Text |
... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C
IXFN 340N06
VDSS = 60 V ID25 = 340 A 3 mW RDS(on) = trr 250 ns
D
G S
S
...187,117 5,237,481 5,486,715 5,381,025
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| Description |
HiPerFET Power MOSFETs Single Die MOSFET
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| File Size |
99.22K /
2 Page |
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it Online |
Download Datasheet |
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