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IXYS[IXYS Corporation]
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| Part No. |
IXFK36N60 IXFK32N60 IXFN36N60 IXFN32N60
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| OCR Text |
...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings IXFK IXFN 600 600 20 30 32N60 32 36N60 36 32N60 128 36N60 144 20 30 5 500 -...174 0.191 0.987 0.004
IXYS reserves the right to change limits, test conditions, and dimensions. ... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
191.79K /
4 Page |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NEZ1011-2E NEZ1414-2E
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| OCR Text |
...e
Note
Symbol VDS Gcomp Tch Rg
Test Condition
MIN. 9.0
TYP. 9.0
MAX. 9.0 3 +130
Unit V dB C
200
1000
1000
No...174.881 158.493 143.945 130.613 116.717 102.174 0.635 0.611 0.584 0.553 0.516 0.476 0.432 0.388 0.34... |
| Description |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
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| File Size |
79.82K /
12 Page |
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it Online |
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NEC, Corp.
NEC Corp.
NEC[NEC]
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| Part No. |
NEZ1011-8E NEZ1414-8E
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| OCR Text |
...e
Note
Symbol VDS Gcomp Tch Rg
Test Condition
MIN. 9.0
TYP. 9.0
MAX. 9.0 3 +130
Unit V dB C
25
50
50
Note Rg...174.212 167.849 162.291 156.702 151.882 147.100 142.592 138.519 133.547 124.123 0.063 0.060 0.061 0.... |
| Description |
8W X, Ku-BAND POWER GaAs MESFET 8瓦特十，KU波段功率GaAs MESFET
8W X / Ku-BAND POWER GaAs MESFET
8W X Ku-BAND POWER GaAs MESFET
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| File Size |
80.74K /
12 Page |
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it Online |
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hitachi
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| Part No. |
BB305C
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| OCR Text |
...0A VDS = 5V, VG1 = 5V VG2S =4V, RG = 82k f = 1MHz VDS = 5V, VG1 = 5V, VG2S = 4V, RG = 82k VDS = 9V, VG1 = 9V, VG2S =6V, RG = 220k VDS = 5V, ...174.9 169.3 163.4 157.5 152.0 146.3 140.9 135.7 130.5 125.7 120.8 116.2 111.5 106.8 102.5 98.4 94.0 ... |
| Description |
From old datasheet system
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| File Size |
79.79K /
12 Page |
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it Online |
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NEC Corp.
NEC[NEC]
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| Part No. |
NES1821B-30
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| OCR Text |
... GHz VDS = 10 V IDS = 1.0 A set Rg = 30 W *3
--4.0 -44.5 11.0
--1.7
-2.6
1.4 45.0 13.0 2.5
C/W
dBm dB A
----
--
*1 PI...174 0.168 0.230 0.312 0.391 0.462 0.524 0.576 0.623 0.661 0.695 0.724 0.747 0.768 0.788 0.804 0.819 ... |
| Description |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
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| File Size |
44.61K /
8 Page |
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HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
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| Part No. |
BB302C
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| OCR Text |
...mA VDS = 9V, VG1 = 9V VG2S = 6V RG = 120k Forward transfer admittance |yfs| 15 20 -- mS VDS = 9V, VG1 = 9V VG2S =6V RG = 120k, f = 1kHz Inpu...174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 8... |
| Description |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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| File Size |
57.12K /
11 Page |
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it Online |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
BB302M
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| OCR Text |
...A VDS = 9V, VG1 = 9V VG2S = 6V, RG = 120k VDS = 9V, VG1 = 9V VG2S =6V RG = 120k, f = 1kHz VDS = 9V, VG1 = 9V VG2S =6V, RG = 120k f = 1MHz VD...174.1 167.9 161.6 155.2 149.1 143.0 137.3 131.5 125.7 120.1 115.1 110.1 104.7 100.3 95.4 90.5 85.9 8... |
| Description |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
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| File Size |
60.66K /
11 Page |
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it Online |
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Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
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| Part No. |
BB304C
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| OCR Text |
...B VDS = 5V, VG1 = 5V, VG2S = 4V RG = 180k VDS = 9V, VG1 = 9V, VG2S =6V RG = 470k VDS = 5V, VG1 = 5V, VG2S =4V RG = 180k, f = 1kHz VDS = 9V, ...174.0 168.0 162.3 156.3 150.4 144.3 138.7 133.3 128.0 122.6 117.5 112.7 108.1 103.6 99.1 94.8 80.4 8... |
| Description |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
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| File Size |
66.64K /
12 Page |
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it Online |
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