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Advanced Micro Devices
Spansion, Inc.
Spansion Inc.
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| Part No. |
AM29PDL127H68VKI AM29PDL127H65VKIN AM29PDL127H68VKIN AM29PDL127H63VKIN AM29PDLI27H68VKI AM29PDLI27H63VKIN AM29PDLI27H68VKIN AM29PDL127H20PCI AM29PDL127H53VKI AM29PDL127H83PCI AM29PDL127H53PCI AM29PDL127H63PCI AM29PDL127H20VKIN AM29PDL127H25VKIN AM29PDL127H30PCI AM29PDL127H30PCIN AM29PDL127H53PCIN AM29PDL127H55PCI AM29PDL127H55PCIN AM29PDL127H63PCIN AM29PDL127H88PCIN AM29PDLI27H68PCI AM29PDLI27H88PCI AM29PDLI27H88PCIN AM29PDL127H88VKIN AM29PDL127H85PCIN AM29PDL127H83VKIN AM29PDL127H85VKI AM29PDLI27H83VKIN AM29PDL127H68 AM29PDL127H68PCI AM29PDL127H68PCIN AM29PDL127H53VKIN AM29PDLI27H53VKI AM29PDLI27H53VKIN AM29PDL127H25PCIN AM29PDL127H25VKI AM29PDL127H20PCIN AM29PDL127H30VKI AM29PDL127H30VKIN AM29PDLI27H88VKIN AM29PDL127H88VKI AM29PDL127H83 AM29PDL127H83PCIN AM29PDL127H83VKI AM29PDLI27H83PCI AM29PDLI27H83PCIN AM29PDLI27H53PCI AM29PDLI27H53PCIN AM29PDLI27H63PCI AM29PDLI27H68PCIN AM29PDL127H65PCI AM29PDL127H65PCIN AM29PDL127H55VKIN AM29PDL127H55VKI AM29PDL127H88PCI
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| OCR Text |
...uiring only two write cycles to pro- gram data instead of four. device erasure occurs by execut- ing the erase command sequence. the host s...electron injection. bank sectors a 16 mbit (4 kw x 8 and 32 kw x 31) b 48 mbit (32 kw x 96) c 48 mbi... |
| Description |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位）.0伏的CMOS只，页面模式同步写闪存与增强VersatileIO控制记忆
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 85 ns, PBGA64
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA80
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位）.0伏的CMOS只，页面模式同步写闪存与增强VersatileIO控制记忆
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| File Size |
693.00K /
68 Page |
 View
it Online |
Download Datasheet
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Advanced Micro Devices, Inc.
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| Part No. |
AM29LV640MU101WHI AM29LV640MU101RWHI AM29LV640MU101RPCI AM29LV640MU120RPCI
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| OCR Text |
...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection.
june 12, 2003 am29lv640mu 3 advance information mirrorbit 64 mbit device fam... |
| Description |
64 Megabit (4 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with 4M X 16 FLASH 3V PROM, 120 ns, PBGA64
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| File Size |
709.65K /
58 Page |
View
it Online |
Download Datasheet |
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Spansion Inc.
Spansion, Inc.
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| Part No. |
AM70PDL127CDH66IT AM70PDL127CDH85IS AM70PDL127CDH85IT AM70PDL129CDH AM70PDL129CDH66IS AM70PDL129CDH85IS AM70PDL129CDH85IT AM70PDL127CDH85I AM70PDL129CDH85I
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| OCR Text |
...uiring only two write cycles to pro- gram data instead of four. device erasure occurs by execut- ing the erase command sequence. the host s...electron injection. chip enable configuration ce#f1 control ce#f2 control bank 1a 48 mbit (32 kw x 9... |
| Description |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) 堆叠式多芯片封装（MCP / XIP）的快闪记忆体，数据存储的MirrorBit闪存和移动存储芯片（XIP）的
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) SPECIALTY MEMORY CIRCUIT, PBGA93
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS 2 × 64兆位米16位）的CMOS 3.0伏特，只有页面模式闪存数据存28兆位米16位）的CMOS
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| File Size |
878.37K /
127 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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