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  power transistor 160v 1 5a Datasheet PDF File

For power transistor 160v 1 5a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. SPU01N60C3 SPD01N60C3 Q67040-S4188 Q67040-S4193
Description for lowest Conduction Losses & fastest Switching
Cool MOS power transistor
COOL MOS⒙ power transistor
Cool MOS⑩ power transistor
Cool MOSpower transistor

File Size 275.90K  /  10 Page

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    New Jersey Semiconductor
Part No. 2SA1214
Description Trans GP BJT PNP 160v 15a 3-Pin MT-200

File Size 60.62K  /  2 Page

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    MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030

FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
Part No. MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MRF6S9045N MRF6S9045NBR1 MRF6S9045NR1 MRF9200LR306 MRF9200LSR3 MW5IC2030MBR106 MW5IC2030NBR1065 MW6IC2015GNBR1 MW6IC2015NBR1 NE76184A-TI MJE3055T MJE2955T
Description    COMPLEMENTARY SILICON power transistorS
COMPLEMETARY SILICON power transistorS
SILICON NPN transistor
HIGH VOLTAGE PNP power transistor
SILICON NPN power DARLINGTON transistor
RF power Field Effect transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, power transistor, TO-220AB

File Size 57.87K  /  4 Page

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    Fujitsu, Ltd.
Electronic Theatre Controls, Inc.
Zarlink Semiconductor, Inc.
Part No. PG2126 PG2118 PG2119 PG2007 PG2017 PG2036 PG2085 PG2083 PG2122 PG2052 PG2024 PG2058 PG2018 PG2030 PG2102 PG2123 PG2116 PG2111 PG2125 PG2135
Description transistor | BJT | PNP | 100V V(BR)CEO | 2A I(C) | TO-66
Photoflash Capacitor Chargers with Automatic Refresh; Package: MSOP; No of Pins: 10; Temperature Range: -40°C to 125°C
transistor | BJT | PNP | 80V V(BR)CEO | 2A I(C) | TO-66
transistor | BJT | PNP | 160v V(BR)CEO | 2A I(C) | TO-46
17&#181;A Max, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 14; Temperature Range: 0°C to 70°C
transistor | BJT | PNP | 140V V(BR)CEO | 2A I(C) | TO-5
High Voltage, 3A, 200kHz Step-Down Switching Regulator; Package: TSSOP; No of Pins: 16; Temperature Range: -40°C to 85°C
17&#181;A Max, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 14; Temperature Range: -40°C to 85°C
700MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 10V/V); Package: QFN; No of Pins: 16; Temperature Range: 0°C to 70°C
Micropower, Dual and Quad, Single Supply, Precision Op Amps; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C
transistor | BJT | PNP | 120V V(BR)CEO | 2A I(C) | TO-5 晶体管|晶体管|进步党| 120伏特五(巴西)总裁|甲一(c)|
transistor | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-46 晶体管|晶体管|进步党| 60V的五(巴西)总裁|甲一c)|的TO - 46
High Voltage, 3A, 200kHz Step-Down Switching Regulator; Package: TSSOP; No of Pins: 16; Temperature Range: -40&deg;C to 85&deg;C 晶体管|晶体管|进步党| 140伏特五(巴西)总裁|甲一(c)|6
transistor | BJT | PNP | 60V V(BR)CEO | 2A I(C) | TO-46 晶体管|晶体管|进步党| 60V的五(巴西)总裁|甲一(c)|的TO - 46
700MHz Low Distortion, Low Noise Differential Amplifier/ADC Driver (AV = 10V/V); Package: QFN; No of Pins: 16; Temperature Range: 0&deg;C to 70&deg;C
transistor | BJT | PNP | 160v V(BR)CEO | 2A I(C) | TO-66
transistor | BJT | PNP | 140V V(BR)CEO | 2A I(C) | TO-66

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    Motorola Mobility Holdings, Inc.
MOTOROLA INC
Part No. TIP112T MJE15028A BUT56AW BUT56AA BUT56AN MOTOROLAINC-BD799T BD798W BD798N MOTOROLAINC-TIP47C BD80916 MJE8502W BDX53DAJ BDX53DU2 BDX53D16 MJE1200716 MJE12007A TIP31AD1 TIP41CN BUT56AS MJE2955T16A MJE5730U
Description 2 A, 100 V, NPN, Si, power transistor, TO-220AB
8 A, 120 V, NPN, Si, power transistor, TO-220AB
8 A, 450 V, NPN, Si, power transistor, TO-220AB
7 A, 60 V, PNP, Si, power transistor, TO-220AB
10 A, 80 V, NPN, Si, power transistor, TO-220AB
5 A, 700 V, NPN, Si, power transistor, TO-220AB
2.5 A, 750 V, NPN, Si, power transistor, TO-220AB
3 A, 60 V, NPN, Si, power transistor, TO-220AB
6 A, 100 V, NPN, Si, power transistor, TO-220AB
10 A, 60 V, PNP, Si, power transistor, TO-220AB
1 A, 300 V, PNP, Si, power transistor, TO-220AB

File Size 156.42K  /  4 Page

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    TY Semiconductor Co., Ltd
Part No. 2SA1415
Description Adoption of FBET Process High Breakdown Voltage (VCEO = 160v)

File Size 469.60K  /  3 Page

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    ENN779D

Sanyo Semicon Device
Part No. ENN779D
Description 160v/140mA High-Voltage Switching and AF 100W Predriver Applications

File Size 42.34K  /  5 Page

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    BLF872 BLF872-2015

NXP Semiconductors
Quanzhou Jinmei Electro...
Part No. BLF872 BLF872-2015
Description UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS power transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; power gain: 16.5 dB

File Size 144.79K  /  16 Page

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    Magnatec
Part No. BUZ901D BUZ900D
Description N-channel power MOSFET for audio applications, 160v
N-channel power MOSFET for audio applications, 200V
N-Channel power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路))

File Size 40.90K  /  4 Page

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    KTD921

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
Part No. KTD921
Description Darlington transistor
TRIPLE DIFFUSED NPN transistor (COLOR & B/W TV power SUPPLY, INDUSTRIAL USE power SUPPLY, GENERAL PURPOSE power AMPLIFIER DARLINGRON transistor)

File Size 354.60K  /  2 Page

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For power transistor 160v 1 5a Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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