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polysilicon Datasheet PDF File

For polysilicon Found Datasheets File :: 1557 Search Time::10.234ms
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				INFINEON[Infineon Technologies AG]
Part No.	TLE4484 TLE4484G Q67006-A9396 INFINEONTECHNOLOGIESAG-Q67006-A9396
OCR Text	...hnology DOPL with high accuracy polysilicon resistors and is available in the SOT223 (SMD) package. The TLE 4484 G is designed to supply systems with a microcontroller (5 V) and a standard MOS-driver-IC (15 V) under severe conditions and is...
Description	CAP CER 10UF 50V X5R 20% SMD 双电压调节器5 V15 V输出 Dual Voltage Regulator with 5 V and 15 V Outputs
File Size	123.27K / 11 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD[Analog Devices]
Part No.	AD678KD AD678KN AD678JD AD678JN AD678BD AD678BJ AD678AD AD678TD AD678AJ AD678SD AD678
OCR Text	... large "distributed" diodes and polysilicon series resistors to dissipate both high energy discharges (Human Body Model) and fast, low energy pulses (Charged Device Model). Per Method 3015.2 of MIL-STD-883C, the AD678 has been classified as...
Description	12-Bit 200 kSPS Complete Sampling ADC 1-CH 12-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP28
File Size	309.09K / 14 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MMA1220D MMA1220DR2
OCR Text	...d from semiconductor materials (polysilicon) using semiconductor processes (masking and etching). It can be modeled as two stationary plates with a moveable plate in-between. The center plate can be deflected from its rest position by subje...
Description	Low G Micromachined Accelerometer
File Size	151.80K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SSD2007 SSD2007A
OCR Text	...! Fast Switching Times ! Rugged polysilicon Gate Cell Structure ! Low Input Capacitance ! Extended Safe Operating Area ! Improved High Temperature Reliability G1 ,G2 SSD2007A 8 SOP S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Top Vi...
Description	Dual N-CHANNEL POWER MOSFET
File Size	178.94K / 5 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
Part No.	ST93C06 ST93C06B1013TR ST93C06B3013TR ST93C06B6013TR ST93C06C ST93C06CB1013TR ST93C06CB3013TR ST93C06CB6013TR ST93C06CM1013TR ST93C06CM3013TR ST93C06CM6013TR ST93C06M1013TR ST93C06M3013TR ST93C06M6013TR 2441
OCR Text	...THOMSON's High Endurance Single polysilicon CMOS technology. In the text the two products are referred to as ST93C06. The memory is divided into either 32 x 8 bit bytes or 16 x 16 bit words. The organization may be selected by a signal appl...
Description	From old datasheet system 256 bit 16 x 16 or 32 x 8 SERIAL MICROWIRE EEPROM 2566 × 162 × 8 MICROWIRE的串行EEPROM Microwire Serial EEPROM 微型导线串行EEPROM
File Size	116.61K / 15 Page	View it Online	Download Datasheet

				SHARP[Sharp Electrionic Components]
Part No.	LH52258A
OCR Text	...y and a matrix constructed with polysilicon load memory cells. This RAM is fully static in operation. The Chip Enable (E) control permits Read and Write operations when active (LOW) or places the RAM in a low-power standby mode when inactiv...
Description	CMOS 32K x 8 Static RAM
File Size	76.32K / 9 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	M5M44405CJ M5M44405CJ-5 M5M44405CJ-5S M5M44405CJ-6 M5M44405CJ-6S M5M44405CJ-7 M5M44405CJ-7S M5M44405CTP-5 M5M44405CTP-5S M5M44405CTP-6 M5M44405CTP-6S M5M44405CTP-7 M5M44405CTP-7S M5M44405TP-7S M5M44405TP-6S M5M44405TP-5S M5M44405TP-7 M5M44405TP-6 M5M44405TP-5
OCR Text	...ial. The use of quadruple-layer polysilicon process combined with silicide technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a red...
Description	EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC EDO ( HYPER PAGE MODE ) 4194304-BIT ( 1048576-WORD BY 4-BIT ) DYNAMIC RAM
File Size	242.91K / 27 Page	View it Online	Download Datasheet

				http:// MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V108CFP-10HI M5M5V108CFP-10XI M5M5V108CFP-70HI M5M5V108CFP-70XI M5M5V108CKR-10HI M5M5V108CKR-10XI M5M5V108CKR-70HI M5M5V108CKR-70XI M5M5V108CKV-10HI M5M5V108CKV-10XI M5M5V108CKV-70HI M5M5V108CKV-70XI M5M5V108CRV-10HI M5M5V108CRV-10XI M5M5V108CRV-70HI M5M5V108CRV-70XI M5M5V108CVP-10HI M5M5V108CVP-10XI M5M5V108CVP-70HI M5M5V108CVP-70XI D98003 M5M5V108KV-10XI M5M5V008CKV-55HI M5M5V008CKV-55XI M5M5V008CKV-70HI M5M5V008CKV-70XI M5M5V008CRV-55HI
OCR Text	...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operat...
Description	1048576-bit (131072-word by 8-bit) CMOS static RAM From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
File Size	85.64K / 7 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
Part No.	M5M5V108CFP-10H M5M5V108CFP-10X M5M5V108CFP-70H M5M5V108CFP-70X M5M5V108CKR-10H M5M5V108CKR-10X M5M5V108CKR-70H M5M5V108CKR-70X M5M5V108CKV-10H M5M5V108CKV-10X M5M5V108CKV-70H M5M5V108CKV-70X M5M5V108CVP-10H M5M5V108CVP-10X M5M5V108CVP-70H M5M5V108CVP-70X D98001 M5M5V108CRV-10H M5M5V108CRV-10X
OCR Text	...sing high-performance quadruple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operat...
Description	From old datasheet system 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
File Size	85.45K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
Part No.	M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5M5V108DKR-70HI
OCR Text	...ed using highperformance triple-polysilicon and double metal CMOS technology. The use of thin film transistor (TFT) load cells and CMOS periphery result in a high density and low power static RAM. They are low standby current and low operat...
Description	1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word8位）的CMOS静态RAM
File Size	57.87K / 8 Page	View it Online	Download Datasheet

For polysilicon Found Datasheets File :: 1557 Search Time::10.234ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |