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  overlaytm Datasheet PDF File

For overlaytm Found Datasheets File :: 347    Search Time::1.031ms    
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    STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STW9NB90 6749
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET N沟道900V - 0.85ohm - 9.7A -对MOSFET47 PowerMESH
N-CHANNEL 900V - 0.85 - 9.7A - TO-247 PowerMESH TM MOSFET
From old datasheet system
N-CHANNEL 900V - 0.85ohm - 9.7A - TO-247 PowerMESH MOSFET

File Size 86.56K  /  8 Page

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    STY140NS10

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STY140NS10
OCR Text overlaytm POWER MOSFET TYPE STY140NS10 s s s STY140NS10 VDSS 100V RDS(on) <0.011 ID 140A TYPICAL RDS(on) = 0.009 STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED DESCRIPTION Using the latest high voltage MESH overlaytm pr...
Description N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET
N-CHANNEL 100V - 0.009 ohm - 140A MAX247⑩ MESH OVERLAY⑩ POWER MOSFET

File Size 253.10K  /  8 Page

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    STMicro
Part No. STB6NB50 5775
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N - CHANNEL 500V - 2.5 - 3.8A - D2PAK/I2PAK PowerMESH TM MOSFET
From old datasheet system

File Size 98.21K  /  9 Page

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    STD1HNC60-1 STD1HNC60

STMICROELECTRONICS[STMicroelectronics]
Part No. STD1HNC60-1 STD1HNC60
OCR Text ...of the first generation of MESH overlaytm. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATION...
Description N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh?II MOSFET
N-CHANNEL 600V 4 OHM 2A DPAK/IPAK POWERMESH II MOSFET
N-CHANNEL 600V - 4ohm - 2A - IPAK/DPAK PowerMesh⑩II MOSFET

File Size 267.58K  /  9 Page

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    意法半导
STMicro
Part No. STD1NB50 5583
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Description N-Channel 500V-7.5Ω-1.4A- IPAK PowerMESHTM MOSFET(N沟道MOSFET)
From old datasheet system
N - CHANNEL 500V - 7.5 - 1.4A - IPAK PowerMESH TM MOSFET

File Size 93.47K  /  8 Page

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    STE38NB50F

STMicroelectronics
Part No. STE38NB50F
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N-CHANNEL 500V - 0.11 OHM - 38A - ISOTOP POWERMESH MOSFET

File Size 270.74K  /  8 Page

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    STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STE38NB50 5564
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Description N-Channel 500V-0.11Ω-38A- ISOTOP PowerMESHTM MOSFET(N沟道MOSFET) N沟道500V -0.11Ω- 38A条,1000V的集电极PowerMESHTM MOSFET的(不适用沟道MOSFET的)
N - CHANNEL PowerMESH MOSFET
N - CHANNEL 500V - 0.11 - 38A - ISOTOP PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 500V - 0.11 ohm - 38A - ISOTOP PowerMESH MOSFET

File Size 281.08K  /  8 Page

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    SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STH15NB50FI STW15NB50 STH15NB50 4867 W15NB50 STW15NB50FI
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Description N-CHANNEL 500V - 0.33W - 14.6A -T0- 247/ISOWATT218 PowerMESH MOSFET
N-CHANNEL 500V - 0.33 - 14.6A -T0- 247/ISOWATT218 PowerMESH TM MOSFET
N-CHANNEL Power MOS MOSFET
From old datasheet system
N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

File Size 108.93K  /  9 Page

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    STMicro
Part No. STP10NB50 6510
OCR Text ...ng the latest high voltage MESH overlaytm process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge terminatio...
Description N - CHANNEL 500V - 0.55 - 10.6A - TO-220 PowerMESH TM MOSFET
From old datasheet system

File Size 83.59K  /  8 Page

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    意法半导
STMicro
Part No. STP4NB50FP STP4NB50 5320
OCR Text ...ng the latest high voltage MESH overlaytm process, SGS-Thomson has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company's proprietary edge termination struct...
Description N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET)
From old datasheet system
N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET

File Size 63.19K  /  7 Page

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For overlaytm Found Datasheets File :: 347    Search Time::1.031ms    
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