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Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
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| Part No. |
HYS72V2100GCU-10 HYS64V2100GCU-10 HYS72V2100GU-10 HYS64V2100GU-10 HYS64V2100G
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| OCR Text |
...sation Optimized for byte-write non-parity or ecc applications Fully PC66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance:
-10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 n... |
| Description |
3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
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| File Size |
74.58K /
12 Page |
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Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
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| Part No. |
M470T2953BS0-CD5_CC M470T6554BG0-CD5_CC M470T6554BG3-CD5_CC M470T6554BGZ0-CD5_CC M470T6554BGZ3-CD5_CC M470T6554BZ0-LD5_CC M470T6554BZ3-LD5_CC M470T2953BY0-LD5_CC M470T3354BG0-CD5_CC M470T3354BG3-CD5_CC M470T3354BGZ0-CD5_CC M470T3354BGZ3-CD5_CC M470T2953BSY3-CD5_CC M470T3354BZ0-LD5_CC M470T3354BZ3-LD5_CC M470T2953BY3-LD5_CC M470T2953BS3-CD5_CC M470T2953BSY0-CD5_CC M470T2953BXX M470T2953BY0 M470T2953BY0-LD5/CC M470T3354BZ0-LD5/CC M470T6554BZ0-LD5/CC M470T2953BS0-CD5/CC M470T3354BG0-CD5/CC M470T6554BG0-CD5/CC M470T3354BZ3-LD5/CC M470T2953BY3-LD5/CC M470T6554BZ3-LD5/CC M470T3354BG3-CD5/CC M470T6554BG3-CD5/CC M470T2953BSY0-CD5/CC M470T2953BSY3-CD5/CC M470T2953BS3-CD5/CC M470T3354BGZ0-CD5/CC M470T3354BGZ3-CD5/CC M470T6554BGZ3-CD5/CC M470T6554BGZ0-CD5/CC
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| OCR Text |
...DIMM based on 512Mb B-die 64bit non-ecc
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IM... |
| Description |
40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 200pin缓冲的SODIMM基于512Mb乙芯4位非ecc
200pin Unbuffered SODIMM based on 512Mb B-die 64bit non-ecc 200pin缓冲的SODIMM基于512Mb乙芯64位非ecc
64M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
32M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
200pin Unbuffered SODIMM based on 512Mb B-die 64bit non-ecc 200pin缓冲的SODIMM基于512Mb乙芯4位非ecc
128M X 64 DDR DRAM MODULE, 0.5 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
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| File Size |
325.20K /
19 Page |
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it Online |
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Samsung Electronics Inc
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| Part No. |
K9F1208U0M-YIB0 K9F1208U0M-YCB0
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| OCR Text |
...portable applications requiring non-volatility.
Pin Configuration
Pin Description
N.C N.C N.C N.C N.C N.C R/B RE CE N.C N.C Vcc Vss...ecc without any block replacement. The said additional block failure rate does not include those rec... |
| Description |
EEPROM - Datasheet Reference
From old datasheet system
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| File Size |
522.24K /
40 Page |
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it Online |
Download Datasheet |
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Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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| Part No. |
HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
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| OCR Text |
...ations Optimized for byte-write non-parity or ecc applications Extended Data Out (EDO) Performance:
-50 tRAC tCAC tAA tRC tHPC RAS Access Time CAS Access Time Access Time from Address Cycle Time EDO Mode Cycle Time 50 ns 13 ns 25 ns 84 ns ... |
| Description |
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ecc DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
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| File Size |
94.87K /
17 Page |
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it Online |
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Samsung Electronics Inc
SAMSUNG[Samsung semiconductor]
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| Part No. |
K9S6408V0A-SSB0NBSP K9S6408V0A-SSB0 K9S6408V0A
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| OCR Text |
...portable applications requiring non-volatility.
SmartMediaTM CARD(SSFDC)
PIN DESCRIPTION
22 VCC 21 CE 20 RE 19 R/B 18 GND 17 VCC 16...ecc without any block replacement. The said additional block failure rate does not include those rec... |
| Description |
8M x 8Bit SmartMedia?Card Data sheet
NAND Flash EEPROM
From old datasheet system
8M x 8 Bit SmartMediaTM Card
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| File Size |
345.62K /
26 Page |
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it Online |
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Motorola
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| Part No. |
MC9328MX21P_D
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| OCR Text |
...be used as primary or secondary non-volatile storage. The on-chip error correction code (ecc) and parity checking circuitry of the NAND Flash controller frees the CPU for other tasks. WLAN, Bluetooth and expansion options are provided throu... |
| Description |
i.MX Processor
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| File Size |
566.23K /
18 Page |
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it Online |
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