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				TOSHIBA
Part No.	SSM3K36TU
OCR Text	...ain current pulse i dp 1000 ma p d (note 1) 500 drain power dissipation p d (note 2) 800 mw channel temperature t ch 150 c storage temperature t stg ?55 to 150 c note: using continuously under heavy loads (e.g. the ap...
Description	Small-signal MOSFET
File Size	210.69K / 5 Page	View it Online	Download Datasheet

				saftbatteries
Part No.	LS33600
OCR Text	...inal capacity 17.0 ah (at 5 ma + 20c 2. 0 v cut-off. the capacity restored by the cell varies according to current drain, t...1000 ohms/3.5 ma + 55c + 20c - 40c - 20c 0.1 1 10 1 100 1000 3.5 3.3 3.1 2.9 2.7 2.5 2.3 2.1 1.9 1.7...
Description	3.6 V Primary lithium-thionyl chloride High energy
File Size	427.91K / 2 Page	View it Online	Download Datasheet

				Cystech Electonics Corp. Cystech Electonics Corp...
Part No.	BTA684K3
OCR Text	...00 10000 -ic, collector current(ma) current gain---hfe ta=125c ta= 75c ta= 25c ta=0c ta=-40c vce=-1v current gain vs collector current 10 100 1000 1 10 100 1000 10000 -ic, collector current(ma) current gain---hfe ta=125c ta=75c ta=25c ta=0c...
Description	PNP Epitaxial Planar Transistor
File Size	259.27K / 8 Page	View it Online	Download Datasheet

				IXYS Corporation
Part No.	MCO150-16IO1
OCR Text	... = 25c vj t = c vj ma 10 v = v t = 25c vj i = a t v t = c c 80 p tot 620 w t = 25c c 150...1000 1.4 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 150 ma t= c -40 vj 1.6 v 200 m...
Description	Thyristor
File Size	175.47K / 5 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology]
Part No.	ADS6616A4A ADS6616A4A-5 ADS6616A4A-6 ADS6616A4A-7 ADS6616A4A-7.5
OCR Text	...50 ADS6616A4A Unit V V W ma Note : Permanent device damage may occur if ABSOLUTE maXIMUM RATING are exceeded. Functional operation...1000 7 1.5 1.5 54 54 14 40 14 10 1 1.5 1.5 1 1.5 1 1.5 1 1.5 1 64 4.5 5.5 100K 60 60 18 42 18 12 1 2...
Description	Synchronous DRAM(1M X 16 Bit X 4 Banks)
File Size	210.32K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6
OCR Text	...50 ADS6632A4A Unit V V W ma Note : Permanent device damage may occur if ABSOLUTE maXIMUM RATING are exceeded. Functional operation...1000 Min 5.5 1000 10 2.25 2.25 55 55 16.5 38.5 16.5 11 1 0 1 5 2 0 2 1.5 1 1.5 1 1.5 1 1.5 1 1 2 1 1...
Description	Synchronous DRAM(512K X 32 Bit X 4 Banks)
File Size	229.91K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text	...50 ADS7608A4A Unit V V W ma Note : Permanent device damage may occur if ABSOLUTE maXIMUM RATING are exceeded. Functional operation...1000 10 2 2 55 55 15 40 15 10 1 0 1 5 2 0 1.5 1.5 1 1.5 1 1.5 1 1.5 1 1 2 1 1 64 4.5 6 10 2.25 2.25 ...
Description	Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
File Size	209.31K / 8 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology] ADATA Technology Co., Ltd.
Part No.	ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 ADATATECHNOLOGYCO.LTD.-ADS7616A4A-7
OCR Text	...50 ADS7616A4A Unit V V W ma Note : Permanent device damage may occur if ABSOLUTE maXIMUM RATING are exceeded. Functional operation...1000 5 5.4 100K 64 -5.5 max Min 6 7.5 2 2 57 15 42 15 1 0 2.75 1.5 0.8 1.5 0.8 1.5 0.8 1.5 0.8 1 1 1...
Description	Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行）
File Size	196.04K / 8 Page	View it Online	Download Datasheet

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