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lower range high voltage chip Datasheet PDF File

For lower range high voltage chip Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				Renesas Electronics Corporation. Renesas Electronics, Corp.
Part No.	M38030F2L-XXXHP M38030F2L-XXXKP M38030F2L-XXXSP M38030F2L-XXXWG M38030MAL-XXXWG M38030MAL-XXXKP M38030FAL-XXXSP M38031FAL-XXXHP M38030FAL-XXXWG M38030MAL-XXXHP M38030FAL-XXXKP M38031FAL-XXXKP M38030FAL-XXXHP M38031FAL-XXXSP M38031FAL-XXXWG M38030MAL-XXXSP M38030F3L-XXXHP M38030F3L-XXXWG M38030M3L-XXXKP M38030F3L-XXXSP M38030F3L-XXXKP M38030M3L-XXXHP M38030FBL-XXXWG M38030MBL-XXXHP M38030FBL-XXXHP M38030FBL-XXXSP M38030MBL-XXXKP M38030M2L-XXXHP M38030M2L-XXXKP M38030M2L-XXXSP M38030M2L-XXXWG M38031F2L-XXXHP M38031F2L-XXXKP M38031F2L-XXXSP M38031F2L-XXXWG M38030FB-XXXHP M38031FBL-XXXSP M38035MBL-XXXSP M38038FBL-XXXSP M38039FBL-XXXSP M38030MBL-XXXSP M38036MBL-XXXSP M38037FBL-XXXSP M38037MBL-XXXSP M38036FBL-XXXSP M38038MBL-XXXSP M38031FC-XXXHP M38031FC-XXXKP M38031FC-XXXWG M38031FCL-XXXHP M38031FCL-XXXKP M38031FCL-XXXSP M38031FCL-XXXWG M38031F5-XXXKP M38031F5-XXXSP M38031F5-XXXWG M38031F5L-XXXHP M38031F5L-XXXKP M38031F5L-XXXSP M38031F5L-XXXWG M38030F1-XXXHP M38030F1-XXXKP M38030F1-XXXSP M38030F1-XXXWG M38030F1L-XXXHP M38030F1L-XXXKP M38030F1L-XXXSP M38030F1L-XXXWG M38031F1-XXXKP M38031F1-XXXWG M38031F1L-XXXHP M38031F1L-XXXKP M38031F6-XXXHP M38031F6-XXXKP M38031F6-XXXSP M38031F6-XXXWG M
Description	256 Kbit (32K x 8) nvSRAM; Organization: 32Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 256 Kb; Package: SOIC 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 5; Operating range: 0 to 70 C 256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.50 to 5.50 V; Three-PLL General Purpose FLASH Programmable Clock Generator; voltage (V): 3.3 V; Input range: 1 MHz to 166 MHz; Output range: 1 MHz to 200 MHz; Outputs: 6 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 256; Vcc (V): 3.3; fMax (MHz): 66; tPD (ns): 12 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 18-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Four Output PCI-X and General Purpose Buffer; voltage (V): 3.3 V; Frequency range: 0 MHz to 140 MHz; Outputs: 4; Operating range: 0 to 70 C 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 2.4 to 2.6 V 4-Mbit (512K x 8) Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.50 to 5.50 V; 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 2.20 to 3.60 V; 64K x 16 Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 16-Mbit (1M x 16 / 2M x 8) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 4.50 to 5.50 V; 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with SEM, INT, BUSY; Density: 128 Kb; Organization: 8Kb x 16; Vcc (V): 4.5 to 5.5 V; Speed: 35 ns 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 2.4 to 2.6 V 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 9 Mb; Organization: 512Kb x 18; Vcc (V): 3.1 to 3.6 V 8-Mbit (512K x 16) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 4.50 to 5.50 V; 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 4.5 to 5.5 V; 9-Mbit (256K x 36/512K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 9 Mb; Organization: 256Kb x 36; Vcc (V): 3.1 to 3.6 V 4-Mbit (256K x 16) Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1024K x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 256K x 16 Static RAM; Density: 4 Mb; Organization: 256Kb x 16; Vcc (V): 3.0 to 3.6 V; 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 2.20 to 3.60 V; 3.3V Zero Delay Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 8; Operating range: -40 to 85 C Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating range: -40 to 85 C 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 512K x 8 Static RAM; Density: 4 Mb; Organization: 512Kb x 8; Vcc (V): 4.5 to 5.5 V; 18-Mbit (512K x 36/1M x 18) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 2.4 to 2.6 V 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency range: 0 MHz to 200 MHz; Outputs: 12; Operating range: -40 to 85 C 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 5; Operating range: -40 to 85 C 2M x 8 Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 3.0 to 3.6 V; 16 Mbit (512K X 32) Static RAM; Density: 16 Mb; Organization: 512Kb x 32; Vcc (V): 3.0 to 3.6 V; 3.3V Zero Delay Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 8; Operating range: 0 to 70 C 8-Mbit (1M x 8) Static RAM; Density: 8 Mb; Organization: 1Mb x 8; Vcc (V): 3.0 to 3.6 V; 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 16-Mbit (1M x 16) Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (256K x 18) Pipelined DCD Sync SRAM; Architecture: Standard Sync, Pipeline DCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 512K (32K x 16) Static RAM; Density: 512 Kb; Organization: 32Kb x 16; Vcc (V): 3.0 to 3.6 V; 4-Mbit (128K x 36) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 1M x 16 Static RAM; Density: 16 Mb; Organization: 1Mb x 16; Vcc (V): 3.0 to 3.6 V; Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating range: 0 to 70 C 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 9; Operating range: 0 to 70 C MoBL(R) 2 Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; Rambus(R) XDR(TM) Clock Generator; VDD: 2.5 V; Input Frequency: 100 MHz to 133 MHz; Output Frequency: 300 MHz to 800 MHz; # Out: 4 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 4-Mbit (128K x 36) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 128Kb x 36; Vcc (V): 3.1 to 3.6 V 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 167; tPD (ns): 7 2.5V or 3.3V, 200-MHz, 1:10 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency range: 0 MHz to 200 MHz; Outputs: 10; Operating range: 0 to 70 C 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 100; tPD (ns): 7 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 128; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 7 18-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V Low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating range: 0 to 70 C Spread Spectrum Clock Generator; voltage(V): 3.3 V; Input Frequency range: 25 MHz to 100 MHz; Output Frequency range: 25 MHz to 100 MHz; Operating range: 0 to 70 C; Package: SOIC Low Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating range: 0 to 70 C 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 143; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 154; tPD (ns): 6 单芯位CMOS微机 SINGLE-chip 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9 单芯位CMOS微机 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 128; Vcc (V): 3.3; fMax (MHz): 83; tPD (ns): 10 单芯位CMOS微机 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 5; fMax (MHz): 125; tPD (ns): 6 单芯位CMOS微机 Three-PLL General-Purpose EPROM Programmable Clock Generator; voltage (V): 3.3/5.0 V; Input range: 1 MHz to 30 MHz; Output range: .077 MHz to 100 MHz; Outputs: 6 单芯位CMOS微机 8-Mbit (512K x 16) MoBL(R) Static RAM; Density: 8 Mb; Organization: 512Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 high Speed Low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating range: 0 to 70 C 单芯位CMOS微机 3.3V SDRAM Buffer for Mobile PCs with 4 SO-DIMMs; voltage (V): 3.3 V; Frequency range: 0 MHz to 100 MHz; Outputs: 10; Operating range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 9; Operating range: -40 to 85 C 单芯位CMOS微机 Programmable Skew Clock Buffer; voltage (V): 5.0 V; Operating Frequency: 3.75 MHz to 80 MHz; Outputs: 8; Operating range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 3.0 to 3.6 V; 单芯位CMOS微机 MoBL(R) 1 Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 18-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 1-Mbit (128K x 8) Static RAM; Density: 1 Mb; Organization: 128Kb x 8; Vcc (V): 4.50 to 5.50 V; 单芯位CMOS微机 4-Mbit (256K x 18) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 4 Mb; Organization: 256Kb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 2-Mbit (64K x 32) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 2 Mb; Organization: 64Kb x 32; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 200-MHz Field Programmable Zero Delay Buffer; voltage (V): 2.5/3.3 V; Frequency range: 10 MHz to 200 MHz; Outputs: 12; Operating range: -40 to 85 C 单芯位CMOS微机 2-Mbit (128K x 16) Static RAM; Density: 2 Mb; Organization: 128Kb x 16; Vcc (V): 2.20 to 3.60 V; 单芯位CMOS微机 SINGLE-chip 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 2-Mbit (256K x 8) Static RAM; Density: 2 Mb; Organization: 256Kb x 8; Vcc (V): 2.20 to 3.60 V; 单芯8位CMOS微机 Very Low Jitter Field and Factory Programmable Clock Generator; voltage (V): 3.3 V; Input range: 10 MHz to 133 MHz; Output range: 20 MHz to 200 MHz; Outputs: 2 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 5; Operating range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 5; Operating range: -40 to 85 C 单芯位CMOS微机 Three-PLL General Purpose FLASH Programmable Clock Generator; voltage (V): 3.3 V; Input range: 1 MHz to 166 MHz; Output range: 0 MHz to 200 MHz; Outputs: 3 单芯位CMOS微机 1:8 Clock Fanout Buffer; voltage (V): 3.3 V; Frequency range: 0 MHz to 350 MHz; Outputs: 8; Operating range: -40 to 85 C 单芯位CMOS微机 Quad PLL Clock Generator with 2-Wire Serial Interface; voltage (V): 2.5/3.3 V; Input range: 27 MHz to 27 MHz; Output range: 4.2 MHz to 166 MHz; Outputs: 5 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency range: 0 MHz to 200 MHz; Outputs: 12; Operating range: 0 to 70 C 单芯位CMOS微机 3.3V Zero Delay Clock Buffer; voltage (V): 3.3 V; Frequency range: 10 MHz to 133 MHz; Outputs: 9; Operating range: 0 to 70 C 单芯位CMOS微机 high Speed Multi-phase PLL Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 24 MHz to 200 MHz; Outputs: 11; Operating range: 0 to 70 C 单芯位CMOS微机 2.5V or 3.3V, 200-MHz, 1:18 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency range: 0 MHz to 200 MHz; Outputs: 18; Operating range: -40 to 85 C 单芯位CMOS微机 -bit AVR Microcontroller with 8K Bytes In- System Programmable Flash 位AVR微控制器具有8K字节的系统内可编程闪 2.5V or 3.3V, 200-MHz, 1:12 Clock Distribution Buffer; voltage (V): 2.5/3.3 V; Frequency range: 0 MHz to 200 MHz; Outputs: 12; Operating range: 0 to 70 C 1:8 Clock Fanout Buffer; voltage (V): 3.3 V; Frequency range: 0 MHz to 350 MHz; Outputs: 8; Operating range: 0 to 70 C Spread Spectrum Clock Generator; voltage(V): 3.3 V; Input Frequency range: 4 MHz to 32 MHz; Output Frequency range: 4 MHz to 32 MHz; Operating range: 0 to 70 C; Package: SOIC high Speed Low voltage Programmable Skew Clock Buffer; voltage (V): 3.3 V; Operating Frequency: 3.75 MHz to 110 MHz; Outputs: 8; Operating range: 0 to 70 C 5V, 3.3V, ISR(TM) high-Performance CPLDs; # Macrocells: 64; Vcc (V): 3.3; fMax (MHz): 100; tPD (ns): 9
File Size	1,602.57K / 119 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SK3507 2SK3507-ZK
Description	PROFET™: Smart high Side Switches; Package: PG-TO252-5; Channels: 1.0; RON @ Tj = 25°C : 12.0 mOhm; Recommended Operating voltage range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense PROFET™: Smart high Side Switches; Package: PG-TO252-5; Channels: 1.0; R_ON @ Tj = 25°C : 12.0 mOhm; Recommended Operating voltage range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense SWITCHING N-CHANNEL POWER MOSFET
File Size	139.00K / 8 Page	View it Online	Download Datasheet

				Rectron Semiconductor
Part No.	HFM107W HFM102W HFM101W HFM108W
Description	SURFACE MOUNT high EFFICIENCY SILICON RECTIFIER voltage range 50 to 1000 Volts CURRENT 1.0 Ampere
File Size	27.99K / 3 Page	View it Online	Download Datasheet

				Rectron Semiconductor
Part No.	HFM208W HFM201W HFM202W HFM203W HFM204W HFM205W HFM201W-W HFM206W
Description	SURFACE MOUNT high EFFICIENCY SILICON RECTIFIER voltage range 50 to 1000 Volts CURRENT 2.0 Amperes
File Size	25.30K / 3 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	HV2512CF1008M350S2 CRHV CRHV1206 CRHV2010 CRHV2510 CRHV2512 HV2512AA1008F100S2 HV2512AA1008F200S2 HV2512AA1008F350S2 HV2512AA1008G100S2 HV2512AA1008G200S2 HV2512AA1008G350S2 HV2512AA1008J100S2 HV2512AA1008J200S2 HV2512AA1008J350S2 HV2512AA1008K100S2 HV2512AA1008K200S2 HV2512AA1008K350S2 HV2512AA1008M100S2 HV2512AA1008M200S2 HV2512AB1008F100S2 HV2512AB1008F200S2 HV2512AB1008F350S2 HV2512AB1008G100S2 HV2512AB1008G200S2 HV2512AB1008G350S2 HV2512AB1008J100S2 HV2512AB1008J200S2 HV2512AB1008J350S2 HV2512AB1008K100S2 HV2512AB1008K200S2 HV2512AB1008K350S2 HV2512AB1008M100S2 HV2512AB1008M200S2 HV2512AB1008M350S2 HV2512AC1008F100S2 HV2512AC1008F200S2 HV2512AC1008F350S2 HV2512AC1008G100S2 HV2512AC1008G200S2 HV2512AC1008G350S2 HV2512AC1008J100S2 HV2512AC1008J200S2 HV2512AC1008J350S2 HV2512AC1008K100S2 HV2512AC1008K200S2 HV2512AC1008K350S2 HV2512AC1008M100S2 HV2512AC1008M200S2 HV2512AC1008M350S2 HV2512AD1008F100S2 HV2512AD1008F200S2 HV2512AD1008F350S2 HV2512AD1008G100S2 HV2512AD1008G200S2 HV2512AD1008G350S2 HV2512AD1008J100S2 HV2512AD1008J200S2 HV2512AD1008J350S2 HV2512AD1008K100S2 HV2512AD1008K200S2 HV2512AD1008K350S2 HV2512AD1008M100S2 HV2512AD1008M200S2 HV2512AD1008M350S2 HV2512AE1008F100S2
Description	chip, Flow Solderable, Custom Sizes Available, Automatic Placement Capability, Top and Wraparound Terminations, Tape and Reel Packaging Available, Internationally Standardized Sizes high voltage chip Resistors
File Size	165.52K / 2 Page	View it Online	Download Datasheet

				Analog Devices, Inc.
Part No.	5962-8982501PA 5962-8982502PA
Description	high Precision 10 V Reference; Package: CERDIP GLASS SEAL; No of Pins: 8; Temperature range: Military 1-OUTPUT THREE TERM voltage REFERENCE, 10 V, CDIP8 high Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature range: Military 1-OUTPUT THREE TERM voltage REFERENCE, 10 V, CDIP8
File Size	43.35K / 3 Page	View it Online	Download Datasheet

				PREDIP[Precid-Dip Durtal SA] PRECI-DIP SA
Part No.	802-90-016-66-001 800-10-016-65-001 800-10-016-66-001 800-90-016-65-001 800-90-016-66-001 802-10-016-65-001 802-10-016-66-001 802-90-016-65-001
Description	PCB connectors 2.54 mm Single row / double row Press-fit PROFET™: Smart high Side Switches; Package: PG-DSO-8; Channels: 1.0; R_ON @ Tj = 25°C : 60.0 mOhm; Recommended Operating voltage range: 5.0 - 34.0 V; IL(SC): 17.0 A; Diagnostic: n.a. PROFET™: Smart high Side Switches; Package: PG-TO220-5; Channels: 1.0; RON @ Tj = 25°C : 38.0 mOhm; Recommended Operating voltage range: 5.5 - 40.0 V; IL(SC): 51.0 A; Diagnostic: digital PROFET™: Smart high Side Switches; Package: PG-DSO-8; Channels: 1.0; RON @ Tj = 25°C : 60.0 mOhm; Recommended Operating voltage range: 5.0 - 34.0 V; IL(SC): 17.0 A; Diagnostic: n.a. PCB connectors 2.54 mm Single row / double row Press-fit 电路板连接器2.54毫米单列/双列 PROFET: Smart high Side Switches; Package: PG-TO220-5; Channels: 1.0; R<sub>ON</sub> @ Tj = 25°C : 38.0 mOhm; Recommended Operating voltage range: 5.5 - 40.0 V; IL(SC): 51.0 A; Diagnostic: digital
File Size	45.40K / 1 Page	View it Online	Download Datasheet

				Analog Devices, Inc. ANALOG DEVICES INC
Part No.	OP17902 OP279 OP179GRTZ-REEL OP179GRTZ-REEL7 OP179GRT-REEL OP279GRUZ-REEL OP279GSZ-REEL OP179GRT-REEL7 OP179GRU
Description	16V; 50mA; rail-to-rail high output current operational amplifier. For multimedia, telecom, DAA transformer driver, LCD driver, low voltage servo control, modems, FET drivers Rail-to-Rail high Output Current Operational Amplifiers Rail-to-Rail high Output Current Operational Amplifier; Package: SOT-23; No of Pins: 5; Temperature range: Industrial OP-AMP, 5000 uV OFFSET-MAX, 5 MHz BAND WIDTH, PDSO5 Rail-to-Rail high Output Current Operational Amplifier; Package: SOIC; No of Pins: 8; Temperature range: Industrial
File Size	250.67K / 16 Page	View it Online	Download Datasheet

				Linear Technology, Corp.
Part No.	LTC6101BHS5PBF LTC6101BHS5TR LTC6101BHS5TRM LTC6101ACMS8TR LTC6101BHS5TRPBF LTC6101ACMS8TRPBF LTC6101CHS5PBF LTC6101CHS5TRPBF LTC6101HVCHS5TRPBF LTC6101HVCHS5PBF LTC6101HVCHS5TRMPBF LTC6101CIS5TRPBF LTC6101AIS5 LTC6101AIMS8TRPBF LTC6101AIMS8PBF LTC6101AHMS8TRPBF LTC6101ACS5TRM LTC6101CHS5TRM
Description	high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SOT; No of Pins: 5; Temperature range: -40° to 125°C SPECIALTY ANALOG CIRCUIT, PDSO5 high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SO; No of Pins: 8; Temperature range: 0°C to 70°C SPECIALTY ANALOG CIRCUIT, PDSO8 high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SOT; No of Pins: 5; Temperature range: -40°C to 85°C SPECIALTY ANALOG CIRCUIT, PDSO5 high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SO; No of Pins: 8; Temperature range: -40°C to 85°C SPECIALTY ANALOG CIRCUIT, PDSO8 high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SO; No of Pins: 8; Temperature range: -40° to 125°C SPECIALTY ANALOG CIRCUIT, PDSO8 high voltage, high-Side Current Sense Amplifier in SOT-23; Package: SOT; No of Pins: 5; Temperature range: 0°C to 70°C SPECIALTY ANALOG CIRCUIT, PDSO5
File Size	246.19K / 20 Page	View it Online	Download Datasheet

				POWER-ONE[Power-One] EPCOS AG
Part No.	OET020YEHH OET020YEHH-A OET020YEJJ-A OET020ZEHH-A OET020ZEJJ-A OET025YGJJ-A OET025YGHH-A OET025ZGHH-A OET025ZGJJ-A OET020ZGHH-A OET020YGHH-A OET025ZEHH-A OET025ZEJJ-A OET025YEJJ-A
Description	25 Watt, input voltage range:18-36V, output voltage 3.3-15V (3.5-0.28A) DC/DC converter 25 Watt, input voltage range:34-75V, output voltage 3.3-15V (3.5-0.28A) DC/DC converter 25 Watt, input voltage range:34-75V, output voltage 3.3-12V (3.5-0.35A) DC/DC converter TRIPLE OUTPUT 25 WATT T1/E1 Transformer Analog IC TRIPLE OUTPUT, 25 WATT 三路输出25瓦特
File Size	92.15K / 3 Page	View it Online	Download Datasheet

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