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  isoplus Datasheet PDF File

For isoplus Found Datasheets File :: 250    Search Time::1.156ms    
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    DSEP30-12CR L373

IXYS, Corp.
IXYS[IXYS Corporation]
ETC
Part No. DSEP30-12CR L373
OCR Text ...RRM V 1200 Type A C isoplus 247TM C A Isolated back surface * DSEP 30-12CR A = Anode, C = Cathode * Patent pending Symbol IFRMS IFAVM IFRM IFSM EAS IAR TVJ TVJM Tstg Ptot VISOL Weight Conditions TC = 85C; rectangular,...
Description HiPerDynFRED with soft recovery (Electrically Isolated Back Surface) 30 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diodes

File Size 18.98K  /  1 Page

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    IXTF280N055T

IXYS Corporation
Part No. IXTF280N055T
OCR Text ...g g = gate d = drain s = source isoplus i4-pak tm (5-lead) (ixtf) g d s s d features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature ...
Description TrenchMVTM Power MOSFET
150 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 53.06K  /  2 Page

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    FIO50-12BD

IXYS Corporation
Part No. FIO50-12BD
OCR Text isoplus i4-PACTM 3 IC25 = 50 A = 1200 V VCES VCE(sat) typ. = 2.0 V 1 2 1 4 5 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 39 ; TVJ = 125C RBSOA, Clamped inductive load; L...
Description Bidirectional Switch with NPT3 IGBT and fast Diode Bridge

File Size 72.42K  /  4 Page

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    IXFR55N50F

IXYS[IXYS Corporation]
Part No. IXFR55N50F
OCR Text ...A A mJ J V/ns W C C C C V~ g isoplus 247TM E153432 Isolated backside* G = Gate D = Drain S = Source TAB = Electrically Isolated Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface...
Description HiPerRF Power MOSFETs F-Class: MegaHertz Switching

File Size 496.18K  /  2 Page

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    FMP26-02P

IXYS Corporation
Part No. FMP26-02P
OCR Text ...C C ~V C C N/lb. trr(typ) isoplus i4-PakTM 1 Isolated Tab 5 Symbol CP dS ,dA dS ,dA Weight Test Conditions Coupling capacitance between shorted pins and mounting tab in the case pin - pin pin - backside metal 1.7 5.5 9 Charact...
Description Polar P & N-Channel Power MOSFET Common Drain Topology

File Size 100.66K  /  4 Page

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    IXFR120N20

IXYS[IXYS Corporation]
Part No. IXFR120N20
OCR Text ...150 150 -55 ... +150 V V V V isoplus 247TM E153432 G A A A A mJ J V/ns D Isolated back surface* D = Drain G = Gate S = Source * Patent pending Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - Hig...
Description HiPerFETTM Power MOSFETs isoplus247

File Size 33.63K  /  2 Page

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    32N50Q

IXYS Corporation
Part No. 32N50Q
OCR Text ...A A J mJ V/ns W C C C C V~ g isoplus 247TM E 153432 G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mountin...
Description Search To IXFR32N50Q

File Size 119.61K  /  4 Page

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    IXGF32N170

IXYS Corporation
Part No. IXGF32N170
OCR Text ...= = 1700V 19A 3.5V 250ns isoplus i4-PakTM Symbol VCES VGES VGEM IC25 IC110 ICM SSOA (RBSOA) tsc PC TJ TJM Tstg TL TSOLD FC VISOL Weight 1.6 mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Force 50/60Hz, 1 minute Test C...
Description High Voltage IGBT

File Size 175.98K  /  5 Page

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    FMD47-06KC5 FDM47-06KC5

IXYS Corporation
Part No. FMD47-06KC5 FDM47-06KC5
OCR Text ...ra low gate charge 3 3 T isoplus i4TM D 4 1 2 5 1 4 D T FMD 2 E72873 5 isolated back surface FDM Features * Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface...
Description CoolMOS Pow er MOSFET with HiPerDyn FRED Buck and Boost Topologies

File Size 74.08K  /  3 Page

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For isoplus Found Datasheets File :: 250    Search Time::1.156ms    
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