igs pdf Datasheet P14 Full Text Search --- IC-ON-LINE

igs Datasheet PDF File

For igs Found Datasheets File :: 1574 Search Time::6.594ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |

				MICROWAVE TECHNOLOGY INC
Part No.	MWT-H7-3 MWT-H7-8 MWT-H7-13 MWT-H7-6 MWT-H7-2
OCR Text	... gate-to-source breakdown volt. igs= -0.4ma, igd= 0 gate-to-drain breakdown volt. igd= -0.4 ma, igs= 0 ma 34 -1.5 106 ms 50 75 -5.0 v v v c/w -5.0 -6.0 -8.0 -8.0 180- 380 rth thermal resistance mwt -h770, h773 dc specifications at ta =...
Description	KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
File Size	104.99K / 2 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	STP60NS04ZB 9161
OCR Text	...S Symbol VDS VDG VGS ID ID IDG igs IDM ( ) PTOT VESD(G-S) VESD(G-D) VESD(D-S) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC ...
Description	N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 10mohm - 60A TO-220 FULLY PROTECTED MESH OVERLAY⑩ MOSFET From old datasheet system N-CHANNEL CLAMPED 10MOHM 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET N-CHANNEL CLAMPED 10MOHM 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET
File Size	291.07K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7107-40ATC BUK7907-40ATC BUK7107-40AIC
OCR Text	...10 V; Figure 2 IDM Ptot IDG(CL) igs(CL) peak drain current total power dissipation drain-gate clamping current gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 tp = 5 ms; = 0.01 continuous tp = 5 ms;...
Description	TrenchPLUS standard level FET V(ds): 40V; V(dgs): 40V; trench PLUS standard level FET. For variable valve timing for engines, electrical power assisted steering
File Size	136.87K / 16 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED AVAGO TECHNOLOGIES LIMI...
Part No.	VMMK-1218-BLKG VMMK-1218-TR1G
OCR Text	...s gate voltage v 0.48 0.58 0.68 igs gate current ua 0.4 gm transconductance ms 200 ga associated gain db 6.7 9 10.2 nf noise figure db 0.81 1.5 fmin noise figure min db 0.71 p-1db 1db compressed output power dbm +12 oip3 output 3 rd order ...
Description	0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package
File Size	664.99K / 12 Page	View it Online	Download Datasheet

				RFHIC
Part No.	RNC16010-10
OCR Text	...current (on-stage) ma - - 4 igs gate-source current (off-stage) ma - - 0.4 igs block diagram preliminary gan hybrid power amplifier rnc16010-10 k orean facilities : 82-31-250-5078 / rfsales@rfhic.com all spe...
Description	GaN Hybrid Power Amplifier
File Size	199.89K / 6 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMI...
Part No.	VMMK-1225
OCR Text	...o 1 ids drain current [2] ma 50 igs gate current ma 0.8 pdn total power dissipation [3] mw 250 pin rf cw input power max dbm 10 tch max channel temperature c +150 jc thermal resistance [4] c/w 200 figure 1. typical i-v curves. (vgs=0.05 v p...
Description	0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package
File Size	654.52K / 13 Page	View it Online	Download Datasheet

				Philips
Part No.	BUK9907-40ATC
OCR Text	...ence data Conditions Tj = 25 C; igs(CL) = -2 mA; ID = 1 A Tmb = 25 C; VGS = 5 V Tmb = 25 C Tj = 25 C; VGS = 5 V; ID = 50 A Tj = 25 C; VGS = 4.5 V; ID = 50 A Tj = 25 C; VGS = 10 V; ID = 50 A VF SF temperature sense diode forward voltage temp...
Description	TrenchPLUS logic level FET
File Size	140.30K / 15 Page	View it Online	Download Datasheet

				Broadcom Corporation.
Part No.	VMMK-1225
OCR Text	...o 1 ids drain current [2] ma 50 igs gate current ma 0.8 pdn total power dissipation [3] mw 250 pin rf cw input power max dbm 10 tch max channel temperature c +150 jc thermal resistance [4] c/w 200 figure 1. typical i-v curves. (vgs=0.05 v p...
Description	0.5 to 26 GHz Low Noise E-PHEMT in a Wafer Scale Package
File Size	691.16K / 13 Page	View it Online	Download Datasheet

				http:// Renesas Electronics Corporation
Part No.	HAF1002 HAF1002-90L HAF1002-90S HAF1002-90STL HAF1002-90STR HAF1002L HAF1002S
OCR Text	..., VDD = -24 V Note 3 Note 3 igs (op) 1 igs (op) 2 IDSS VGS (off) RDS (on) RDS (on) \|yfs\| Coss td (on) tr td (off) tf VDF trr tos1 tos2 Notes: 3. Pulse test 4. Include the time shift based on increasing of channel temperature when ope...
Description	Silicon P Channel MOS FET Series Power Switching
File Size	91.03K / 9 Page	View it Online	Download Datasheet

				Filtronic Compound Semiconductors
Part No.	FPD1500DFN
OCR Text	... -5 V VDS = 1.3 V; IDS = 1.5 mA igs = 1.5 mA IGD = 1.5 mA 0.7 12 12 375 40 42 465 750 400 1 0.9 18 18 15 1.3 550 mA mA mS A V V V dBm Min Typ 27 18 45 1.2 Max Units dBm dB % dB RF SPECIFICATIONS MEASURED AT f = 1850 MHz USING CW SIGNAL P...
Description	LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT 低噪声，高线性包装的PHEMTT
File Size	150.93K / 5 Page	View it Online	Download Datasheet

For igs Found Datasheets File :: 1574 Search Time::6.594ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |