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  id-3.1a Datasheet PDF File

For id-3.1a Found Datasheets File :: 193    Search Time::1.906ms    
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    INFINEON[Infineon Technologies AG]
Part No. A223 BSA223SP
OCR Text ... Product Summary VDS R DS(on) ID SC-75 -20 1.2 -0.39 V A Drain pin 3 Type BSA 223SP Package SC-75 Ordering Code Q67042...31A VGS =0, VDS =-15V, f=1MHz Symbol Conditions min. Values typ. 0.7 45 21 17 3.8 5 5.1 3.2...
Description OptiMOS-P Small-Signal-Transistor OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SC-75, Ron = 1.2

File Size 95.22K  /  8 Page

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    IRFP3703

IRF[International Rectifier]
Part No. IRFP3703
OCR Text ... 30V RDS(on) max 0.0028 ID 210A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @...31A 54A 76A 4000 RG 20V tp D .U .T IA S + V - DD A 3000 0 .0 1 2000 Fig...
Description Power MOSFET(Vdss=30V, Rds(on)max=0.0028ohm, Id=210A?)
HEXFET? Power MOSFET

File Size 163.88K  /  8 Page

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    NTE[NTE Electronics]
Part No. NTE2374
OCR Text ...uous Drain Current (VGS = 10V), ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....31A, Note 4 VDS = VGS, ID = 250A VDS = 50V, ID = 11A, Note 4 VDS = 200V, VGS = 0V VDS = 160V, VGS = ...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 27.33K  /  3 Page

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    STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STW29NK50Z
OCR Text ...I I I I I Figure 1: Package ID 31 A PW 350 W VDSS 500 V RDS(on) < 0.13 TYPICAL RDS(on) = 0.105 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURIN...
Description 31 A, 500 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
N-CHANNEL 500 V - 0.105ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET
N-CHANNEL 500 V - 0.105 Ohm - 31A TO-247 Zener-Protected SuperMESH MOSFET

File Size 466.57K  /  10 Page

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    IRFBL3703

IRF[International Rectifier]
Part No. IRFBL3703
OCR Text ... 30V RDS(on) max 0.0025 ID 260A Benefits >1mm lower profile than D2Pak Same footprint as D2Pak Low Gate Impedance to Reduce Swit...31A 54A 76A 4000 RG 20V tp D .U .T IA S + V - DD A 3000 0 .0 1 2000 Fig...
Description Synchronous Rectification in High Power High Frequency DC/DC Converters
HEXFET? Power MOSFET

File Size 103.08K  /  8 Page

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    APTML20UM18R010T1AG

Microsemi Corporation
Part No. APTML20UM18R010T1AG
OCR Text ID = 109A* @ Tc = 25C Application * Electronic load dedicated to power supplies and battery discharge testing Features * * * * * Linear ...31A @ TC=80C to not exceed the shunt specification. In saturation mode These Devices are sensiti...
Description Linear MOSFET Power Module

File Size 102.06K  /  3 Page

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    DMP3010LPS DMP3010LPS-13

Diodes Incorporated
Part No. DMP3010LPS DMP3010LPS-13
OCR Text ID TA = 25C (Note 5) -36A Features and Benefits * * * * * * * * * * Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(on) - Minimizes On State Losses Low Input Capacitance Fast Switching Speed <1...
Description P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 143.26K  /  6 Page

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    IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP

International Rectifier
Part No. IRFS31N20DPBF IRFSL31N20DPBF IRFB31N20DPBF IRFB31N20DPBF-15 IRFS31N20DTRLP
OCR Text ... 200V RDS(on) max 0.082 ID 31A Benefits l Low Gate to Drain to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design,(See AN 1001) l Fully Characterized Avalanche Voltage and Curre...
Description High Frequency DC-DC converters
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082ヘ , ID = 31A )
HEXFET Power MOSFET ( VDSS = 200V , RDS(on)max = 0.082Ω , ID = 31A )

File Size 285.31K  /  12 Page

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    IRFR5305 IRFU5305 IRFRU5305 IRFR5305TR IRFR5305TRL IRFR5305TRR IRFR5305PBF IRFU5305PBF

IRF[International Rectifier]
Part No. IRFR5305 IRFU5305 IRFRU5305 IRFR5305TR IRFR5305TRL IRFR5305TRR IRFR5305PBF IRFU5305PBF
OCR Text ... = -55V RDS(on) = 0.065 G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-55V Rds(on)=0.065ohm Id=-31A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package

File Size 155.18K  /  10 Page

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    IRFP3703PBF IRFP3703PBF-15

International Rectifier
Part No. IRFP3703PBF IRFP3703PBF-15
OCR Text ...ute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS ...31A 54A 76A 4000 RG 20V D.U.T IAS tp + V - DD A 3000 0.01 2000 Fig 12a....
Description Synchronous Rectification
HEXFET Power MOSFET

File Size 212.80K  /  9 Page

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For id-3.1a Found Datasheets File :: 193    Search Time::1.906ms    
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