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id-13a Datasheet PDF File

For id-13a Found Datasheets File :: 2544 Search Time::1.859ms
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				International Rectifier
Part No.	IRFPC60LC
OCR Text	.... VDSS = 600V RDS(on) = 0.40 ID = 16A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IA...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datashe...
Description	Power MOSFET(Vdss=600V, Rds(on)=0.40ohm, Id=16A)
File Size	294.28K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15
OCR Text	...DSS -100V RDS(on) 0.07 ID -34A Fifth Generation HEXFET(R) power MOSFETs from International Rectifier utilize advanced processing...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description	-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package 34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A) Avalanche Energy Ratings
File Size	111.77K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] http://
Part No.	IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF IRFR5505TRL IRFR5505TRR IRFU5505PBF
OCR Text	...= -55V RDS(on) = 0.11 G S ID = -18A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing ...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit + D.U.T. - VDS I...
Description	P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??) -55V Single P-Channel HEXFET Power MOSFET in a I-Pak package -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A) HEXFET? Power MOSFET
File Size	104.10K / 10 Page	View it Online	Download Datasheet

				乐山无线电股份有限公 Leshan Radio Company Co., Ltd.
Part No.	1500W1.5KE6.8 600WP6KE6.8 600WP6KE440A 1500W1.5KE440A 400WP4KE6.8
OCR Text	...1AD VBR Maximum Reverse Leakage ID(VWM) (A) Maximum Peak Impulse Surge Current IPPM (A) 400W 600W 1500W Maximun Clamping Voltage VC(@IPPM) V...13A 15 15A 16 16A 18 18A 20 20A 22 22A 24 24A 6.12 6.45 6.75 7.13 7.38 7.79 8.19 8.65 9.00 9.50 9...
Description	Transient Voltage Suppresor
File Size	83.96K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT10086BLC APT10086SLC
OCR Text	...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter BLC D3PAK TO-247 SLC D G S All Ratings: TC ...13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description	POWER MOS VI 1000V 13A 0.860 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVFR
OCR Text	...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage * 100% Avalanche Tested FREDFET...13A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V. APT R...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	68.65K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10086BVR
OCR Text	... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 1000V 13A 0.860 Ohm
File Size	65.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10086SVR
OCR Text	... MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...13A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Te...
Description	POWER MOS V 1000V 13A 0.860 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	68.97K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPC50A
OCR Text	...S 600V Rds(on) max 0.58 ID 11A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dy...13A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) ...
Description	Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)
File Size	94.48K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPC50LC
OCR Text	.... VDSS = 600V RDS(on) = 0.60 ID = 11A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IA...13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit To Order Previous Datashe...
Description	Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)
File Size	282.67K / 8 Page	View it Online	Download Datasheet

For id-13a Found Datasheets File :: 2544 Search Time::1.859ms
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