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				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	2SK3799
OCR Text	...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 900 900 30 8 24 50 1080 8 5 150 -55~150 Unit V V V A A W mJ A mJ C C 1. Gate 2. Drain 3. Source Pulse (Note 1) Drain power dissipation Single pulse avalanche energy (Note 2) Ava...
Description	Silicon N-Channel MOS Type Switching Regulator Applications
File Size	218.06K / 6 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3472
OCR Text	...ol VDSS VDGR VGSS ID IDP PD EAS iar EAR Tch Tstg Rating 450 450 30 1 2 20 122 1 2 150 -55 to150 Unit V V V A A W mJ A mJ C C Pulse (Note 1) JEDEC JEITA TOSHIBA SC-64 2-7B1B Weight: 0.36 g (typ.) Thermal Characteristics Char...
Description	Switching Regulator Applications
File Size	313.28K / 6 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPA11N80C3 SPP11N80C3
OCR Text	...l SPP ID 11 7.1 ID puls EAS EAR iar VGS VGS Ptot Tj , Tstg 33 470 0.2 11 20 30 156 Value SPA Unit A 111) 7.11) 33 470 0.2 11 20 30 41 W C A V A mJ Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.2A, V...
Description	for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS⑩ Power Transistor
File Size	250.35K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP4N40E PHB4N40E
OCR Text	...MAX. 195 UNIT mJ EAR IAS, iar Unclamped inductive load, IAS = 2.7 A; tp = 0.28 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 iar = 4.4 A; tp = 2.5 s; Tj prior to ava...
Description	PowerMOS transistors Avalanche energy rated
File Size	77.80K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP4ND40E PHB4ND40E
OCR Text	...17 Repetitive avalanche energy1 iar = 4.4 A; tp = 1 s; Tj prior to avalanche = 25C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, iar - 5.5 4.4 mJ A THERMAL RESISTANCES SYMBO...
Description	PowerMOS transistors FREDFET, Avalanche energy rated
File Size	59.64K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP7N40E PHB7N40E
OCR Text	...MAX. 290 UNIT mJ EAR IAS, iar Unclamped inductive load, IAS = 4.8 A; tp = 0.23 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 iar = 7.2 A; tp = 2.5 s; Tj prior to ava...
Description	PowerMOS transistors Avalanche energy rated
File Size	78.04K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	2SK3760
OCR Text	... DSS V DGR V GSS ID IDP PD EA S iar EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 600 600 30 3.5 14 60 6.3 W mJ A mJ C C Unit V V V A 15.6 max. 15.6 max 2.7 1.5max 1.5 max 0.81 max 0.81 0.45 0.45 2.7 2.54 2.54 2.7 1 2 ...
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS6)
File Size	264.79K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHW11N50E PHB11N50E
OCR Text	...) SYMBOL PARAMETER EAS EAR IAS, iar Non-repetitive avalanche energy CONDITIONS PHB11N50E, PHW11N50E MIN. - MAX. 707 18 10.9 UNIT mJ mJ A Unclamped inductive load, IAS = 10.9 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 5...
Description	PowerMOS transistors Avalanche energy rated
File Size	97.26K / 9 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PHW20N50E
OCR Text	...) SYMBOL PARAMETER EAS EAR IAS, iar Non-repetitive avalanche energy CONDITIONS MIN. MAX. 1300 32 20 UNIT mJ mJ A Unclamped inductive load, IAS = 20 A; tp = 0.2 ms; Tj prior to avalanche = 25C; VDD 50 V; RGS = 50 ; VGS = 10 V Repetitive ava...
Description	PowerMOS transistors Avalanche energy rated 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
File Size	88.42K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHW8ND50E PHB8ND50E PHP8ND50E
OCR Text	...17 Repetitive avalanche energy2 iar = 8.5 A; tp = 1 s; Tj prior to avalanche = 25C; RGS = 50 ; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, iar - 19 8.5 mJ A THERMAL RESISTANCES SYMBOL...
Description	PowerMOS transistors FREDFET, Avalanche energy rated
File Size	90.34K / 10 Page	View it Online	Download Datasheet

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