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Mosel Vitelic, Corp.
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Part No. |
V53C516400A
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OCR Text |
...PIN CONFIGURATION Top View
VCC I/O1 I/O2 WE RAS A11 A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14
3116...tRAC tCAC tCAA tOEA tRAL tRCS tRCH tRRH tCLZ tOFF tOEZ tDZC tDZO tCDD tODD Access time from RAS Acce... |
Description |
4M x 4 Fast Page Mode CMOS Dynamic RAM(4Mx4快速页面模式CMOS动态RAM)
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File Size |
180.59K /
24 Page |
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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Part No. |
KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80
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OCR Text |
...inning 256Kx16x32sa -RM80 -SM80 I/O Freq. MHz 800 800 trac (Row Access Time) ns 40 40 Part Number
Features
Highest sustained bandwidth per DRAM device
KM416RD8AS-R bM80 KM416RD8AS-ScM80
- 1.6GB/s sustained data transfer rate - Se... |
Description |
128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
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File Size |
3,826.45K /
64 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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Part No. |
KMM5361203C2WG KMM5361203C2W
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OCR Text |
...c) : Output High Voltage Level (I OH = -5mA) : Output Low Voltage Level (I OL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent o...tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tRAL tRCS tRCH... |
Description |
1M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh
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File Size |
272.21K /
17 Page |
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SAMSUNG[Samsung semiconductor]
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Part No. |
M466F0804DT1-L
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OCR Text |
...onnection Serial Address / Data I/O Serial Clock Reserved Use Reserved for Future Use
REV. 0.1 Oct. 2000
DRAM MODULE
FUNCTIONAL BLOCK...tRAC tCAC tAA tCLZ tOLZ tCEZ tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP tASR tRAH tASC tCAH tRAL tRCS... |
Description |
8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh
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File Size |
447.45K /
20 Page |
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it Online |
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Price and Availability
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