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  high voltage igbts Datasheet PDF File

For high voltage igbts Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60B3S HGTD7N60B3S HGTP7N60B3 FN4412
Description From old datasheet system
14A 600V UFS Series N-Channel igbts
14A, 600V, UFS Series N-Channel igbts

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
Description From old datasheet system
27A, 600V, UFS Series N-Channel igbts
27A/ 600V/ UFS Series N-Channel igbts

File Size 111.87K  /  7 Page

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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
Description 24A, 600V, UFS Series N-Channel igbts 4A00V的,的ufs系列N沟道IGBT
24A/ 600V/ UFS Series N-Channel igbts

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
Description From old datasheet system
21A 1200V NPT Series N-Channel igbts with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel igbts with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel igbts with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

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    SANYO[Sanyo Semicon Device]
Part No. 2SC3675
Description 900V/100mA high-voltage Amplifier high-voltage Switching Applications
high-voltage Amp, high-voltage Switching Applications
high-voltage Amp high-voltage Switching Applications
high-voltage Amp/ high-voltage Switching Applications

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    Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3 HGT1S12N60C3S HGTP12N60C3NL
Description 24A,600V, UFS Series N-Channel igbts 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel igbts

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    Hitachi,Ltd.
Sanyo Denki Co., Ltd.
ZF Electronics, Corp.
Part No. AI3D5 AI3D9 AI3D7 AI3D8 AI3D6 AM2D8 AM2D55J FAM2D5 FAM2D12G FAM2D15J AI3D13G AI4D7 AI4D8 AI4D5 AI4D6 AI4D9 AM2D10 AM2D14G FAM2D75J FAI3D75J FAI4D75J AM3D75J AI4D9J AI3D9J AM2D9J AM3D9J FAM2D4 FAM2D6 FAM3D45J FAM3D55 FAM3D50J FAM3D45G AI4D60 FAM2D9 FAM3D8 FAM2D13 FAM2D14 FAM2D16 FAM3D6G FAM3D6J FAM2D9J AI4D6J AI4D16J FAI4D16J FAI4D6J FAM3D35J AM2D50G AM2D50J AM2D5G AM2D55G AM3D55G AI3D5G FAM3D55J AI3D55G FAM2D35J AI4D5G AI4D55G FAM3D15J FAM3D5J FAM2D9G FAM2D8G FAM2D8J FAM2D80G FAM2D80J AI3D40 AI3D40G AI4D45G AI3D45G AI4D40G AI3D40J AI3D45J AI4D40J FAI4D6G FAM2D60J FAI3D60G AM3D10J AI4D25J AI3D20G AM3D11J FAM3D35G
Description 8 MINI MAP,PB/HALO FREE,NIPDAU LF,1.8V(SERIAL EE)
8 ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE)
Discrete igbts; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 1; Comments: high-rugged type; V_CES (V): (max 1200)
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: standard; Internal
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: SMQ; XJE016 JEITA: SC-61; Number of Pins: 4; Features: low VF; Internal
10MS, 8 EIAJ, IND TEMP, GREEN, 1.8V(SERIAL EE)
Stepping Motor Driver ICs; Function: Driver; Vopmax (Vm*): 34V (40V); Io (lpeak): 1.5A (1.8A); Excitation: 1/16 step; I/F: CLK input; Mixed Decay Mode: included; Package: HSOP36; RoHS Compatible: yes
250NS,32LCC,883C; LEV B FULLY COMPLIANT(EEPROM)
Discrete igbts; Surface Mount Type: N; Package: TO-3P(N); Number Of Pins: 3; No Of Circuits: 2; Comments: high-rugged type; V_CES (V): (max 600)
Discrete igbts; Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; No Of Circuits: 2; Comments: high-rugged type; V_CES (V): (max 600)
Discrete igbts; Surface Mount Type: Y; Package: TSSOP-8; Number Of Pins: 8; No Of Circuits: New product; Comments: 2.9; V_CES (V): (max 400)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min -0.6) (max -1.1); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 0.5) (max 1.2); R DS
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; V th (V): (min 1.1) (max 1.8); R DS
Dual/Quad Zero-Drift Operational Amplifiers; Package: SSOP; No of Pins: 16; Temperature Range: -40° to 125°C
10MS, DIE, 1.8V, 11 MILS THICKNESS(SERIAL EE)
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: high current; Part
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: high breakdown
Small-Signal Schottky Barrier Diodes; Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Features: low VF; Internal
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: Low-noise; Part
General Purpose Transistors (Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; Comments: high voltage SW; Part
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.6) (max 1.1); R DS On (Ω): 5.2 (max 15); Drain-Source voltage (V): (max 20); Drain Current (mA): (max 100)
10MS, 8 TSSOP, EXT TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 TSSOP, IND TEMP, GREEN, 2.7V(SERIAL EE)
10MS, 8 PDIP, IND TEMP, GREEN, 2.7V(SERIAL EE)
DIE/WAFER FORM(EEPROM)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: ES6; Number of Pins: 6; V th (V): (min 0.5) (max 1.1); R DS On (Ω): 0.140 (max 0.180) 0.120 (max 0.145); Drain-Source voltage (V): (max 30); Drain Current (mA): (max 500)
high-Frequency Schottky Barrier Diodes; Surface Mount Type: Y; Package: VESM; Number Of Pins: 3; Application Scope: VHF, UHF MIX; V F (V): 0.25; C T (pF): 0.6; V R (V): (max 4); Average Forward Current I_F Max (mA): (max 25)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On (Ω): 18 (max 45); Drain-Source voltage (V): (max -20); Drain Current (mA): (max -100)
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: UF6; Number of Pins: 6; V th (V): (min 0.8) (max 2); R DS On (Ω): 0.33 (max 0.44) 0.23 (max 0.3); Drain-Source voltage (V): (max 60); Drain Current (mA): (max 2000)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min 0.8) (max 2.5); R DS On (Ω): 20 (max 50); Drain-Source voltage (V): (max 50); Drain Current (mA): (max 50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 20 (max 40); Drain-Source voltage (V): (max -20); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min 2) (max 3.5); R DS On (Ω): 0.6 (max 1); Drain-Source voltage (V): (max 60); Drain Current (mA): (max 200)
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: S-MINI; XJE016 JEITA: SC-59; Number of Pins: 3; V th (V): (min -0.5) (max -1.5); R DS On (Ω): 2.4 (max 4); Drain-Source voltage (V): (max -30); Drain Current (mA): (max -200)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -0.8) (max -2.5); R DS On (Ω): 20 (max 50); Drain-Source voltage (V): (max -50); Drain Current (mA): (max -50)
Small-Signal MOS FETs(Single); Surface Mount Type: N; Package: MINI; Number of Pins: 3; V th (V): (min -2) (max -3.5); R DS On (Ω): 1.3 (max 2); Drain-Source voltage (V): (max -60); Drain Current (mA): (max -200)
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
Logic IC 逻辑IC
Discrete igbts; Surface Mount Type: N; Package: TO-3P(LH); Number Of Pins: 3; No Of Circuits: 2; Comments: Non isolation package; V_CES (V): (max 900) 逻辑IC
90NS, VSOP, IND TEMP(EPROM) 逻辑IC
Dual -48V Supply and Fuse Monitor; Package: SO; No of Pins: 8; Temperature Range: 0&deg;C to 70&deg;C 逻辑IC
45NS, SOIC, IND TEMP(EPROM) 逻辑IC
Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TESM; Number of Pins: 3; V th (V): (min 0.8) (max 1.5); R DS On (&#206;&#169;): 4 (max 7); Drain-Source voltage (V): (max 30); Drain Current (mA): (max 100) 逻辑IC

File Size 81.95K  /  1 Page

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    2SC4630LS

Sanyo Semicon Device
Part No. 2SC4630LS
Description NPN Triple Diffused Planar Silicon Transistor 900V / 100mA high-voltage Amplifier, high-voltage Switching Applications
900V/100mA high-voltage Amplifier,high-voltage Switching Applications

File Size 27.87K  /  3 Page

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    2SC4637LS

Sanyo Semicon Device
Part No. 2SC4637LS
Description NPN Triple Diffused Planar Silicon Transistor 1800V / 15mA high-voltage Amplifier, high-voltage Switching Applications
1800V/15mA high-voltage Amplifier,high-voltage Switching Applications

File Size 30.54K  /  3 Page

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    2SC4633LS

Sanyo Semicon Device
Part No. 2SC4633LS
Description NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA high-voltage Amplifier, high-voltage Switching Applications
1200V/30mA high-voltage Amplifier,high-voltage Switching Applications

File Size 26.78K  /  3 Page

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For high voltage igbts Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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