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				NXP Semiconductors PHILIPS[Philips Semiconductors] Philipss
Part No.	NE5592 NE5592D NE5592N
OCR Text	...ION D, N Packages IN A1 IN A2 GA GA VEE 1 2 3 4 5 6 7 B A 14 13 12 11 10 9 8 OUT A2 OUT A1 VCC GB GB IN B2 IN B1 FEATURES OUT B1 OUT B2 * 110MHz unity gain bandwidth * Adjustable gain from 0 to 400 * Adjustable pass band * No fre...
Description	Video amplifier
File Size	59.97K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	SPD13N05L SPU13N05L Q67040-S4116-A2 Q67040-S4124-A2
OCR Text	...tot = 35W lkj i h VGS [V] 2.5 ga b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 0.32 RDS (on) 0.28 0.24 0.20 0.16 0.12 a b c d e f fd e f g h i dj k l g 0.08 0.04 0.00 0 VGS [V] = a 3.0 2.5 b 3.5 c...
Description	SIPMOS Power Transistor SIPMOS功率晶体 SIPMOS ? Power Transistor
File Size	138.05K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp. NEC, Corp.
Part No.	2SC3356 2SC3356S 2SC3356R24 2SC3356R25 2SC3356R23 2SC3356-VM 2SC3356-T1B 2SC3356-T2B
OCR Text	....95 2.90.2 NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz * High Power Gain MAG = 13 dB TYP. @VCE = 10 V, IC = 20 ...A A GHz 1.0 pF dB 2.0 dB VCE = 10 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IC...
Description	For amplify low noise and high frequency MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR) TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-346 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 346
File Size	100.80K / 8 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1
OCR Text	..., f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz * Large PT in Small Package PT : 2 W with 16 cm2 x 0.7...a)* Tj Tstg 20 12 3.0 100 1.2 62.5 150 -65 to +150 V V V mA W C/W C C Term, Connection E : Emitte...
Description	For amplify high frequency and low noise. NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
File Size	75.76K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC4225 2SC4225R2 2SC4225R3
OCR Text	...A 50 70 2 2SC4225 NF, Ga vs. COLLECTOR CURRENT Ga - Associated Gain - dB 6 NF - Noise Figure - dB VCE = 10 V f = 1 GHz Ga ...a device described herein or any other liability arising from use of such device. No license, either...
Description	SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 70MA I(C) \| SOT-323 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
File Size	39.87K / 8 Page	View it Online	Download Datasheet

				Avago Technologies, Ltd. HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
Part No.	AT-41511 AT-41511-BLK AT-41511-TR1 AT-41533 AT-41533-BLK AT-41533-TR1 AT41511 AT41533
OCR Text	...nce: AT-41511: 1 dB NF, 15.5 dB GA AT-41533: 1 dB NF, 14.5 dB GA * Characterized for 3, 5, and 8 Volt Use * SOT-23 and SOT-143 SMT Plastic P...a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized ...
Description	General Purpose, Low Noise NPN Silicon Bipolar Transistor 通用型，低噪声NPN硅双极晶体管 General Purpose/ Low Noise NPN Silicon Bipolar Transistor
File Size	87.57K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	AT-41586 AT-41586-BLK AT-41586-TR1
OCR Text	...15 COLLECTOR 3 15 12 9 GA 2 EMITTER 3 0 0.5 NFO 2 0 NFO (dB) 6 4 1.0 2.0 3.0 4.0 FREQUENCY (GHz...A A 270 0.2 1.0 Note: 1. For more information on outlines 86, refer to "Tape and Reel Packagin...
Description	Low Cost General Purpose Transistors
File Size	65.79K / 5 Page	View it Online	Download Datasheet

				HP[Agilent(Hewlett-Packard)]
Part No.	ATF55143 ATF-55143 ATF-55143- ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2
OCR Text	...Symbol Vgs Vth Idss Gm Igss NF Ga OIP3 P1dB Parameter and Test Condition Operational Gate Voltage Threshold Voltage Saturated Drain Cur...A mmho A dB dB dB dB dBm dBm dBm dBm Min. 0.3 0.18 -- 110 -- -- -- 15.5 -- 22.0 -- -- -- Typ....
Description	Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
File Size	168.79K / 21 Page	View it Online	Download Datasheet

				SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BFP520 Q62702-F1794 Q62702-F1491
OCR Text	... GHz and 2 mA / 2 V Outstanding Ga = 20 dB Noise Figure F = 0.95 dB * For oscillators up to 15 GHz * Transition frequency fT = 45 GHz * Gold...a Siemens Application Notes CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/...
Description	NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
File Size	47.23K / 8 Page	View it Online	Download Datasheet

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