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  fbet Datasheet PDF File

For fbet Found Datasheets File :: 419    Search Time::1.907ms    
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    EC3A01B ENN6612B

SANYO[Sanyo Semicon Device]
Part No. EC3A01B ENN6612B
OCR Text ...nt characteristics. Adoption of fbet process. Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VGDO...
Description From old datasheet system
Electret Condenser Microphone Applications
Junction FETs

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    EC3A01H

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. EC3A01H
OCR Text ...nt characteristics. Adoption of fbet process. 0.3 4 0.500 0.050 0.320 1 : Source 2 : Drain 1 3 : Gate SANYO : ECSP1206 Specifications Absolute Maximum Ratings at Ta=25C Parameter Gate-to-Drain Voltage Gate Current Drain ...
Description N-Channel Silicon Junction FET - Electret Condenser Microphone Applications
Junction FETs

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    SANYO
Part No. 2SC5991
OCR Text ...res * * * * * * Adoption of fbet, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE width. High allowable power dissipation. Specifications Absolute Maximum Ratings...
Description Low-Saturation Voltage Transistors

File Size 42.68K  /  5 Page

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    UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
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Part No. 2SB1202L-X-T6C-K 2SB1202L-X-TM3-T 2SB1202L-R-TN3-K 2SB1202L-S-T6C-T 2SB1202L-S-TM3-R 2SB1202L-S-TM3-T 2SB1202L-S-TN3-K 2SB1202L-U-T6C-R 2SB1202L-R-T6C-T 2SB1202L-R-TM3-R 2SB1202L-R-TM3-T 2SB1202L-S-T6C-R 2SB1202L-T-TM3-K 2SB1202L-T-TN3-R 2SB1202L-T-TN3-T 2SB1202L-U-T6C-T 2SB1202L-R-TN3-R 2SB1202L-R-TN3-T 2SB1202L-T-TM3-R 2SB1202L-S-TN3-T 2SB1202L-T-TM3-T 2SB1202L-R-T6C-R 2SB1202L-T-T6C-R 2SB1202L-U-T6C-K 2SB1202L-R-T6C-K 2SB1202L-R-TM3-K 2SB1202L-S-T6C-K 2SB1202L-S-TM3-K 2SB1202L-S-TN3-R 2SB1202L-T-T6C-K 2SB1202L-T-T6C-T 2SB1202L-T-TN3-K 2SB1202 2SB1202L-X-TN3-T 2SB1202L-U-TM3-K 2SB1202L-U-TM3-R 2SB1202L-U-TM3-T 2SB1202L-U-TN3-K 2SB1202L-U-TN3-R 2SB1202L-U-TN3-T 2SB1202L-X-TN3-R 2SB1202-R-T6C-K 2SB1202-R-T6C-R 2SB1202-R-T6C-T 2SB1202-R-TM3-K 2SB1202-R-TM3-R 2SB1202-R-TM3-T 2SB1202-R-TN3-K 2SB1202-R-TN3-R 2SB1202-R-TN3-T 2SB1202-S-T6C-K 2SB1202-S-T6C-R 2SB1202-S-T6C-T 2SB1202-S-TM3-K 2SB1202-S-TM3-R 2SB1202-S-TM3-T 2SB1202-S-TN3-K 2SB1202-S-TN3-R 2SB1202-S-TN3-T 2SB1202-T-T6C-K 2SB1202-T-T6C-R 2SB1202-T-T6C-T 2SB1202-T-TM3-K 2SB1202-T-TM3-R 2SB1202-T-TM3-T 2SB1202-T-TN3-K 2SB1202-T-TN3-R 2SB1202-T-TN3-T 2SB1202-U-T6C-K 2SB1202-U-T6C-R 2SB1202-U-T6C-T 2SB1202-U-TM3-K 2SB1202-U-TM3-R
OCR Text ...-252 FEATURES * Adoption of fbet, MBIT processes * Large current capacity and wide ASO * Low collector-to-emitter saturation voltage * Fast switching speed 1 TO-126C *Pb-free plating product number: 2SB1202L ORDERING INFORMATIO...
Description HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-252
HIGH CURRENT SWITCHING APPLICATION 大电流开关应
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-126
HIGH CURRENT SWITCHING APPLICATION 3 A, 50 V, PNP, Si, POWER TRANSISTOR, TO-251

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    2SC3647-AB3-R 2SC3647L-AB3-R 2SC3648-AB3-R 2SC3648L-AB3-R 2SC3647

UTC[Unisonic Technologies]
Part No. 2SC3647-AB3-R 2SC3647L-AB3-R 2SC3648-AB3-R 2SC3648L-AB3-R 2SC3647
OCR Text ...CON TRANSISTOR * Adoption of fbet, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs 1 SOT-89 *Pb-free pl...
Description HIGH-VOLTAGE SWITCHING APPLICATIONS
HIGH-VOLTAGE SWITCHING PREDRIVER APPLICATIONS

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    2SC6019

Sanyo Semicon Device
Part No. 2SC6019
OCR Text ...res * * * * * * Adoption of fbet and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. High allowable power dissipation. Specifications Absolute Maximum R...
Description NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications

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    SANYO
Part No. 2SC3576
OCR Text ...576] Features * Adoption of fbet process. * High DC current gain (hFE=800 to 3200). * Low collector-to-emitter saturation voltage (VCE(sat)0.5V). * High VEBO (VEBO15V). B : Base C : Collector E : Emitter SANYO : SPA Specifications ...
Description NPN Epitaxial Planar Silicon Transistor High hFE Low-Frequency General-Purpose Amplifier Applications

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    SANYO
Part No. 2SC3956
OCR Text ...NP and NPN types. * Adoption of fbet process. * Micaless type : TO-126 plastic package. 1.4 4.0 1.0 3.3 3.0 1.6 0.8 1.5 3.0 0.8 0.75 7.5 15.5 11.0 0.7 1 2 3 ( ) : 2SA1541 4.8 Specification...
Description NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications

File Size 43.95K  /  5 Page

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    SANYO
Part No. 2SC5710
OCR Text ...tures * * * * * Adoption of fbet and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 0.85 0.7 1.5 2.3 0.5 5.5 7.0 0.8 1.6...
Description NPN Epitaxial Planar Silicon Transistors

File Size 44.12K  /  6 Page

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    SANYO
Part No. 2SC3645
OCR Text ...ations Features * Adoption of fbet process. * High breakdown voltage (VCEO=160V). * Excellent linearity of hFE and small Cob. * Fast switching speed. * Very small size marking it easy to provide highdensity, small-sized hybrid ICs. Pac...
Description NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Predriver Applications

File Size 121.19K  /  5 Page

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For fbet Found Datasheets File :: 419    Search Time::1.907ms    
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