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  epi-cmos Datasheet PDF File

For epi-cmos Found Datasheets File :: 356    Search Time::0.906ms    
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    MAXWELL[Maxwell Technologies]
Part No. 7206FRPFS-50 7206F 7206FRPFB-15 7206FRPFB-20 7206FRPFB-30 7206FRPFB-40 7206FRPFB-50 7206FRPFE-15 7206FRPFE-20 7206FRPFE-30 7206FRPFE-40 7206FRPFE-50 7206FRPFI-15 7206FRPFI-20 7206FRPFI-30 7206FRPFI-40 7206FRPFI-50 7206FRPFS-15 7206FRPFS-20 7206FRPFS-30 7206FRPFS-40 7206FRPFB20 7206FRPFB30 7206FRPFB40 7206FRPES20 7206FRPES50 7206FRPFE20 7206FRPES15 7206FRPES40 7206FRPES30 7206FRPFI30 7206FRPEB30 7206FRPEB40 7206FRPEB50 7206FRPEBE0 7206FRPFE30 7206FRPFE50 7206FRPFE15 7206FRPFI40
OCR Text epi-cmos (16K x 9-Bit) Parallel FIFO I 7206F 7206F Logic Diagram Memory FEATURES: * 16K x 9-bit organization * RAD-PAK(R) radiation-hardened against natural space radiation * A total dose hardness: - > 100 krad (Si), depend...
Description High-Speed epi-cmos (16K x 9-Bit) Parallel FIFO

File Size 205.75K  /  15 Page

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    IMP[IMP, Inc]
Part No. C1004
OCR Text ... N-well contact N-well p-epi p+ substrate Sidewall spacer ID vs VD, W/L = 20/1.2 35.0 VGS = 5.0V -15.0 ID vs VD, W/L = 20/1.2 VGS = -5.0V Drain Current (mA) IDS Drain Current (mA) IDS 28.0 VGS = 4.0V -12.0 ...
Description Process C1004

File Size 30.83K  /  2 Page

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    IMP Inc
IMP[IMP, Inc]
IMP Inc
Part No. C1210
OCR Text ...dth/Space Gate Poly Width/Space EPI P <100> 7 - 8.5 -cm 5V N-well 2 2 1.5x1.5m 1.5x1.5m 2.5 / 1.5m 2.5 / 1.5m 1.5 / 2.0m N+/P+ Width/Space N...CMOS 1.2m technology. Metal 2 VIA Metal 1 Metal 1 SIO2 LTO LTO n+ Poly gate Source S...
Description Process C1210 CMOS 1.2mm Zero Threshold Devices

File Size 33.75K  /  4 Page

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    IMP[IMP, Inc]
Part No. C3015
OCR Text ...ontact p p p-well n-epi N+ substrate Cross-sectional view of the C3015 process ID vs VD, W/L = 20/4.0 5 VGS = 10V 4 VGS = 9.0V VGS = 8.0V 3 VGS = 7.0V VGS = 6.0V VGS = 5.0V 1 VGS = 4.0V VGS = 3.0V VGS = 2.0V 56 78 9 10 34...
Description CMOS 3um Digital

File Size 31.91K  /  2 Page

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    IMP[IMP, Inc]
Part No. C3017
OCR Text ... p-well contact p-well n-epi N+ substrate Cross-sectional view of the C3017 process ID vsVD, W/L = 20/4.0 5 VGS = 10V ID vsVD, W/L = 20/4.0 -3 Drain Current (mA) IDS VGS = 8.0V Drain Current (mA) IDS 4 VGS ...
Description 10 Volt Analog Mixed Mode

File Size 29.16K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. HS-6564RH
OCR Text ...21 GND* * Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD (Si) - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s * Low Power Standby 4.4mW Maximum * Low Power Operation 308mW/MHz Maximum * Data Retentio...
Description Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module

File Size 568.67K  /  9 Page

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    INTERSIL[Intersil Corporation]
Part No. HS-83C55RH
OCR Text ...E SEAL DIP * Radiation Hardened epi-cmos . E hni ww SE ec COMPLIANT OUTLINE D5, CONFIGURATION 3 - Total Dose 1 x 105 RAD(Si) rw T ur SIL o TOP VIEW - Transient Upset > 1 x 108 RAD(Si)/s (Ports and DDR) to 12 tac NTER - Latch-Up Free > 1 x 1...
Description Radiation Hardened 16K Bit CMOS ROM

File Size 608.74K  /  12 Page

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    SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. LIS2L01
OCR Text ...ed process called ThELMA (Thick Epi-Poly layer for Microactuators and Accelerometers) developed by ST to produce inertial sensor and actuato...CMOS process that allow high level of integration to design a dedicated circuit which is trimmed to ...
Description SPECIALTY ANALOG CIRCUIT, PDSO24
INERTIAL SENSOR: 2AXIS/1G LINEAR ACCELEROMETER
INERTIAL SENSOR : 2Axis/1g LINEAR ACCELEROMETER

File Size 60.76K  /  6 Page

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    STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. LIS2L02AQ
OCR Text ...ed process called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuat...CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to...
Description    INERTIAL SENSOR: 2Axis - 2g/6g LINEAR ACCELEROMETER
INERTIAL SENSOR: 2AXIS - 2G/6G LINEAR ACCELEROMETER

File Size 119.26K  /  6 Page

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    意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. LIS3L02AQ
OCR Text ...ed process called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuat...CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to...
Description INERTIAL SENSOR: 3Axis - 2g/6g LINEAR ACCELEROMETER

File Size 101.45K  /  9 Page

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For epi-cmos Found Datasheets File :: 356    Search Time::0.906ms    
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