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IMP[IMP, Inc]
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| Part No. |
C1004
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| OCR Text |
...
N-well contact
N-well
p-epi p+ substrate
Sidewall spacer
ID vs VD, W/L = 20/1.2
35.0 VGS = 5.0V
-15.0
ID vs VD, W/L = 20/1.2
VGS = -5.0V
Drain Current (mA) IDS
Drain Current (mA) IDS
28.0
VGS = 4.0V
-12.0 ... |
| Description |
Process C1004
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| File Size |
30.83K /
2 Page |
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IMP Inc IMP[IMP, Inc] IMP Inc
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| Part No. |
C1210
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| OCR Text |
...dth/Space Gate Poly Width/Space EPI P <100> 7 - 8.5 -cm 5V N-well 2 2 1.5x1.5m 1.5x1.5m 2.5 / 1.5m 2.5 / 1.5m 1.5 / 2.0m N+/P+ Width/Space N...CMOS 1.2m technology.
Metal 2
VIA
Metal 1
Metal 1
SIO2 LTO LTO n+
Poly gate Source S... |
| Description |
Process C1210 CMOS 1.2mm Zero Threshold Devices
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| File Size |
33.75K /
4 Page |
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IMP[IMP, Inc]
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| Part No. |
C3015
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| OCR Text |
...ontact
p
p
p-well
n-epi N+ substrate
Cross-sectional view of the C3015 process
ID vs VD, W/L = 20/4.0
5 VGS = 10V 4 VGS = 9.0V VGS = 8.0V 3 VGS = 7.0V VGS = 6.0V VGS = 5.0V 1 VGS = 4.0V VGS = 3.0V VGS = 2.0V 56 78 9 10 34... |
| Description |
CMOS 3um Digital
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| File Size |
31.91K /
2 Page |
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IMP[IMP, Inc]
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| Part No. |
C3017
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| OCR Text |
...
p-well contact
p-well
n-epi N+ substrate
Cross-sectional view of the C3017 process
ID vsVD, W/L = 20/4.0
5
VGS = 10V
ID vsVD, W/L = 20/4.0
-3
Drain Current (mA) IDS
VGS = 8.0V
Drain Current (mA) IDS
4
VGS ... |
| Description |
10 Volt Analog Mixed Mode
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| File Size |
29.16K /
2 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HS-6564RH
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| OCR Text |
...21 GND*
* Radiation Hardened EPI CMOS - Total Dose 1 x 105 RAD (Si) - Transient Upset > 1 x 108 RAD (Si)/s - Latch-Up Free to > 1 x 1012 RAD (Si)/s * Low Power Standby 4.4mW Maximum * Low Power Operation 308mW/MHz Maximum * Data Retentio... |
| Description |
Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module
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| File Size |
568.67K /
9 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HS-83C55RH
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| OCR Text |
...E SEAL DIP * Radiation Hardened epi-cmos . E hni ww SE ec COMPLIANT OUTLINE D5, CONFIGURATION 3 - Total Dose 1 x 105 RAD(Si) rw T ur SIL o TOP VIEW - Transient Upset > 1 x 108 RAD(Si)/s (Ports and DDR) to 12 tac NTER - Latch-Up Free > 1 x 1... |
| Description |
Radiation Hardened 16K Bit CMOS ROM
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| File Size |
608.74K /
12 Page |
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LIS2L01
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| OCR Text |
...ed process called ThELMA (Thick Epi-Poly layer for Microactuators and Accelerometers) developed by ST to produce inertial sensor and actuato...CMOS process that allow high level of integration to design a dedicated circuit which is trimmed to ... |
| Description |
SPECIALTY ANALOG CIRCUIT, PDSO24 INERTIAL SENSOR: 2AXIS/1G LINEAR ACCELEROMETER INERTIAL SENSOR : 2Axis/1g LINEAR ACCELEROMETER
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| File Size |
60.76K /
6 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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| Part No. |
LIS2L02AQ
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| OCR Text |
...ed process called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuat...CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to... |
| Description |
INERTIAL SENSOR: 2Axis - 2g/6g LINEAR ACCELEROMETER INERTIAL SENSOR: 2AXIS - 2G/6G LINEAR ACCELEROMETER
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| File Size |
119.26K /
6 Page |
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it Online |
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LIS3L02AQ
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| OCR Text |
...ed process called THELMA (Thick Epi-Poly Layer for Microactuators and Accelerometers) developed by ST to produce inertial sensors and actuat...CMOS process that allows high level of integration to design a dedicated circuit which is trimmed to... |
| Description |
INERTIAL SENSOR: 3Axis - 2g/6g LINEAR ACCELEROMETER
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| File Size |
101.45K /
9 Page |
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it Online |
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