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Atmel
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| Part No. |
AT28HC64B
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| OCR Text |
...ust be loaded within 150 s (t blc ) of the previous byte. if the t blc limit is exceeded, the at28hc64b will cease accepting data and commence the internal programming operation. all bytes during a page write operation must reside on the... |
| Description |
64K EEPROM with 64-Byte Page & Software Data Protection
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| File Size |
196.38K /
21 Page |
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it Online |
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FORCE TECHNOLOGIES LTD
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| Part No. |
FT28C256F-35UMB
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| OCR Text |
...st be written within 150 s (t blc ) of the previous byte. if the t blc limit is exceeded the ft 28c256 will cease accept ing data and commence the internal program- ming operation. all bytes during a page write operation must reside on ... |
| Description |
32K X 8 EEPROM 5V, 250 ns, CPGA28
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| File Size |
715.95K /
22 Page |
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it Online |
Download Datasheet |
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Xicor
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| Part No. |
X68C75-SLIC
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| OCR Text |
...aking the wc high prior to t blc (100 m s; the time delay from the last write cycle to the start of internal programming cycle) will inhibit the write operation. 2899 pgm t01.1 the x68c75 write control input, serves as an external contr... |
| Description |
Port Expander and E2 Memory
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| File Size |
307.66K /
26 Page |
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it Online |
Download Datasheet |
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Winbond Electronics Corp
Winbond Electronics, Corp.
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| Part No. |
W29C020C-70B W29C020C-90B W29C020C-12B
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| OCR Text |
...hin a byte - load cycle time (t blc ) of 200 m s after the initial byte - load cycle, the w29c020c will stay in the page load cycle. additional bytes can then be loaded consecutively. the page load cycle will be terminated and the intern... |
| Description |
256K X 8 CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32
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| File Size |
196.19K /
21 Page |
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it Online |
Download Datasheet |
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Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
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| Part No. |
GLS29EE010-70-4C-WHE GLS29EE010-70-4C-NHE-T SST29EE010-70-4I-NHE SST29EE010-90-4C-WHE SST29EE010-70-4I-WHE SST29EE010-70-4C-WHE SST29EE010-90-4C-NHE
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| OCR Text |
...ithin a byte-load cycle time (t blc ) of 100 s, the sst29ee010 will stay in the page- load cycle. additional byte s are then loaded consecutively. the page-load cycle will be terminated if no additional byte is loaded into the page buffer w... |
| Description |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PQCC32
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 90 ns, PDSO32
128K X 8 FLASH 5V PROM, 70 ns, PDSO32
128K X 8 FLASH 5V PROM, 90 ns, PQCC32
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| File Size |
558.74K /
28 Page |
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it Online |
Download Datasheet |
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Hitachi,Ltd.
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| Part No. |
HN58V65A HN58V66A
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| OCR Text |
...t dl 100 ns byte load cycle t blc 0.3 30 s byte load window t bl 100 s write cycle time t wc 10* 4 ms time to device busy t db 120 ns write start time t dw 0* 5 ns reset protect time* 2 t rp 100 s reset high time* 2, 6 t res 1s n... |
| Description |
64 k EEPROM (8-kword ×8-bit)(64 k EEPROM (8k×8) 64亩的EEPROM8 KWord的8位）4亩的EEPROM8K的字× 8位）
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| File Size |
214.76K /
28 Page |
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it Online |
Download Datasheet |
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