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For ba1 Found Datasheets File :: 4968 Search Time::1.047ms
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				Samsung semiconductor
Part No.	K4H510438
OCR Text	... VDD NC NC WE CAS RAS CS NC BA0 ba1 AP/A10 A0 A1 A2 A3 VDD VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD NC NC WE CAS RAS CS NC BA0 ba1 AP/A10 A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23...
Description	512Mb B-die DDR SDRAM Specification
File Size	328.94K / 23 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S561632B K4S561632B-TC_L1L K4S561632B-TC_L1H K4S561632B-TC_L75 K4S561632B-TC/L1L K4S561632B-TC/L75 K4S561632B-TC/L1H
OCR Text	... Notes 4. BA0 Low Low High High ba1 Low High Low High Before Bank A Bank B Bank C Bank D After Bank A Bank C Bank B Bank D Revision 0.2 (May 30, 2000) * Eliminate "Preliminary" * Add "133MHz" in IBIS SPECIFICATION Rev. 0.2 May.2000 ...
Description	256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM米16 × 4银行同步DRAM LVTTL
File Size	130.19K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	H5TQ1G63BFR-XXC
OCR Text	...refca vss j k vdd a3 a0 a12/ bc ba1 vdd k l vss a5 a2 a1 a4 vss l m vdd a7 a9 a11 a6 vdd m n vss reset a13 a14 a8 vss n 1 2 3 4 5 6 7 8 9 12 a b c d e f g h j k l m n populated ball ball not populated 3 789 (top view: see the balls through...
Description	1Gb DDR3 SDRAM
File Size	421.37K / 32 Page	View it Online	Download Datasheet

				ELPIDA MEMORY INC
Part No.	EDJ1108BASE-DJ-E EDJ1104BASE-AG-E
OCR Text	... d e f g h j a3 vdd a0 a12(/bc) ba1 vdd a5 vss a2 a1 a4 vss k l m n vss vdd 1 vddq vss vss 2 vssq dq0 vss dq2 dq6 vssq vddq vrefdq vss vdd /cs ba0 a7 /reset nc nc vdd 3 nc dqs /dqs dq4 /ras /cas /we ba2 a9 a13 7 nu/(/tdqs) dm/tdqs dq1 vdd d...
Description	128M X 8 DDR DRAM, 0.225 ns, PBGA78 256M X 4 DDR DRAM, 0.3 ns, PBGA78
File Size	1,604.28K / 148 Page	View it Online	Download Datasheet

				PROMOS TECHNOLOGIES INC
Part No.	V54C3256164VDUF6I V54C3256404VDUT7I V54C3256164VDUT6I
OCR Text	... four banks controlled by ba0 & ba1 programmable cas latency: 2, 3 programmable wrap sequence: sequential or interleave programmable burst length: 1, 2, 4, 8, and full page for sequential type 1, 2, 4, 8 for interleave type multiple b...
Description	16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
File Size	674.83K / 56 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text	...Organization 16M x 16 Bank BA0, ba1 Row A0 - A12 Column Address A0 - A8 1 September 2004 K4S56163PF - R(B)G/F FUNCTIONAL BLOCK DIAGRAM Mobile-SDRAM I/O Control LWE Data Input Register Bank Select LDQM 4M x 16 Sen...
Description	16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
File Size	111.59K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HY5DU56422BT-D4
OCR Text	...a9, a11 a0-a9 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 ...
Description	(HY5DU56x22BT-D4x) 256M-P DDR SDRAM
File Size	243.23K / 32 Page	View it Online	Download Datasheet

For ba1 Found Datasheets File :: 4968 Search Time::1.047ms
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