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Microsemi, Corp.
MICROSEMI CORP-SCOTTSDALE
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| Part No. |
MSP1N5914BUR-1A MSP1N5915BUR-1A MSP1N5914BUR-1ATR MSP1N5916BUR-1ATR MSP1N5915BUR-1ATR MQ1N5928BUR-1B
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| OCR Text |
... ? metall urgic a ll y enh anc ed inter nal co ntact des ign for greater re lia bil i t y an d lo w e r thermal resist anc e ? standar d volta ge toler anc es are + / - 5% w i t h b suffix and 1 0 % w i th a suffix id entifi ... |
| Description |
3.6 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2
3.9 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2
4.3 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB HERMETIC SEALED, GLASS, MELF-2
13 V, 1.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-213AB
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| File Size |
189.25K /
3 Page |
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Fujitsu, Ltd.
Toshiba, Corp.
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| Part No. |
FP-2R5RE821M-R5P FP-2R5RE152M-R5CG FP-2R5RE152M-R5PH FP-4R0RE821M-R5PH
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| OCR Text |
... 1. 5 co ndi t i o n ca pac i t anc e lea k age cu r r ent d i dd ip at ion f a c t o r w i t h i n 20 % of t he v a l ue b e f o r e t e s t n o t to e x c e e d th e v a l u e s p e c i f i e d r e lia b ilit y o t her s ca pa... |
| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 2.5 V, 820 uF, THROUGH HOLE MOUNT RADIAL LEADED, LEAD FREE
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 2.5 V, 1500 uF, THROUGH HOLE MOUNT RADIAL LEADED, LEAD FREE
CAPACITOR, ALUMINUM ELECTROLYTIC, SOLID POLYMER, POLARIZED, 4 V, 820 uF, THROUGH HOLE MOUNT RADIAL LEADED, LEAD FREE
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| File Size |
484.22K /
2 Page |
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it Online |
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GSI Technology, Inc.
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| Part No. |
GS8162Z72C-150I GS8162Z18B-250I GS8162Z18B-200I GS8162Z18B-225I GS8162Z18D-166I GS8162Z18D-250I GS8162Z72C-200I GS8162Z36D-133I GS8162Z36B-150I 162Z36B-166I GS8162Z36B-225I
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| OCR Text |
... view (package d) 1234567891011 anc ae1 bb nc e3 cke adv a a aa bnc ae2ncba ck w g a anc b cncnc v ddq v ss v ss v ss v ss v ss v ddq nc dqa c dnc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa d enc dqb v ddq v dd v ss v ss v ss v dd v dd... |
| Description |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6.5 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 6 ns, PBGA119
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 7 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 18 ZBT SRAM, 5.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 8.5 ns, PBGA165
18Mb Pipelined and Flow Through Synchronous NBT SRAM 512K X 36 ZBT SRAM, 7.5 ns, PBGA119
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| File Size |
834.95K /
38 Page |
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GSI Technology, Inc.
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| Part No. |
GS8162Z72AC-150T GS8162Z72AGC-250T GS8162Z72AGC-150T GS8162Z72AC-300T GS8162Z72AGC-200T GS8162Z72AGC-300T GS8162Z72AC-200T GS8162Z72AC-250T
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| OCR Text |
... view (package d) 1234567891011 anc ae1 bb nc e3 cke adv a a aa bnc ae2ncba ck w g a anc b cncnc v ddq v ss v ss v ss v ss v ss v ddq nc dqpa c dnc dqb v ddq v dd v ss v ss v ss v dd v ddq nc dqa d enc dqb v ddq v dd v ss v ss v ss v dd v d... |
| Description |
256K X 72 ZBT SRAM, 7.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
256K X 72 ZBT SRAM, 5.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
256K X 72 ZBT SRAM, 5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
256K X 72 ZBT SRAM, 6.5 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209
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| File Size |
892.92K /
36 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
WFP630
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| OCR Text |
...ra i n ? s ourc e on re s i s t anc e r d s (o n) v g s = 1 0 v , i d = 4 . 5 a - - 0 . 4 ? f orwar d t ran s condu c tan c e g f s v ds = 5 0 v , i d = 4 . 5 a - 7 . 0 5 - s i npu t capa c i tan c e c i s s v ds = 2 5 v , v g s = 0 v , f =... |
| Description |
Silicon N-Channel MOSFET
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| File Size |
537.02K /
7 Page |
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it Online |
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