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Inchange Semiconductor
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Part No. |
BDT84 BDT86
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OCR Text |
... ceo(sus) = -60v(min)- bdt82; -80v(min)- bdt84; -100v(min)- bdt86; -120v(min)- bdt88 complement to type bdt81/83/85/87 applications...7a; i b = -0.7a b -1.6 v v be (on) base-emitter on voltage i c = -5a ; v ce = -4v -1.5 v... |
Description |
(BDT82 - BDT88) Silicon PNP Power Transistors
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File Size |
112.52K /
2 Page |
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FUJI ELECTRIC HOLDINGS CO., LTD.
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Part No. |
2SK3530-01MR 2SK3530
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OCR Text |
...
Units /W /W
*1 L=8.80mH,Vcc=80v *2 I F-D,-di/dt=50A/ s,Vcc DSS,Tch150
DATE DRAWN CHECKED MA4LE
NAME
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
REVISIONS
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Description |
Fuji Power MOSFET SuperFAP-G series Target Specification Fuji Power MOSFET SuperFAP-G series Target Specification 7 A, 800 V, 1.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
28.34K /
1 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF7491 IRF7491TR
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OCR Text |
80v
RDS(on) max
16m@VGS = 10V
ID
9.7a
Benefits Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche ... |
Description |
80v Single N-Channel HEXFET Power MOSFET in a SO-8 package
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File Size |
502.63K /
8 Page |
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Savantic
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Part No. |
2N6111
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OCR Text |
...cut-off current 2n6111 v ce =-80v; v be =-1.5v v ce =-70v; be =-1.5v,t c =125 -0.1 -2.0 ma i ebo emitter cut-off current v e...7a ; v ce =-4v 2.3 f t transition frequency i c =-0.5a ; v ce =-4v;f=1mhz 10 mhz
savanti... |
Description |
(2N6107 - 2N6111) Silicon PNP Power Transistors
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File Size |
121.30K /
3 Page |
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it Online |
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Price and Availability
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