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  64mbit 1m x 16bit x 4 banks by Datasheet PDF File

For 64mbit 1m x 16bit x 4 banks by Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

    W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W28F641TT80L W28F641

Winbond
Part No. W28F641B W28F641BB80L W28F641BT80L W28F641TB80L W28F641TT80L W28F641
Description From old datasheet system
64mbit (4MBIT 】 16) PAGE MODE DUAL WORK FLASH MEMORY

File Size 377.24K  /  31 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MR27V6452D
Description 64mbit Electrically Programmable Read-Only Memory With Page Mode.(4M字6位或8位M字位一次性可编程ROM 64兆比特电可编程只读页面模式。(4分字× 16位或8位M字8位一次性可编程ROM的字记忆体)

File Size 89.95K  /  11 Page

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    M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M30LW128D110ZE1T M30LW128D110ZA6T M30LW128D110ZE6T M30LW128D

STMICROELECTRONICS[STMicroelectronics]
Part No. M30LW128D110N1T M30LW128D110ZA1T M30LW128D110N6T M30LW128D110ZE1T M30LW128D110ZA6T M30LW128D110ZE6T M30LW128D
Description 128 Mbit (two 64mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product

File Size 462.22K  /  57 Page

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    ST Microelectronics
意法半导
Part No. M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128D110ZE1T M30LW128D110ZE6T M30LW128D110ZA6T M30LW128D110ZA1T
Description 128 Mbit (two 64mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product

File Size 473.45K  /  57 Page

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    K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF75

Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
Description 2M x 16bit x 4 banks Mobile SDRAM in 54FBGA 200万16 × 4银行4FBGA移动SDRAM
8M x 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M x 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M x 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 111.60K  /  12 Page

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    A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316AV-7

AMIC Technology
Part No. A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316AV-7
Description Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM

File Size 1,429.16K  /  46 Page

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    K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4S641632E-TC55 K4S641632E-TC70 K4S641632E-TL1H K4S641632E-TL1L K4S64163

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S641632E-TC1H K4S641632E-TC1L K4S641632E-TC50 K4S641632E-TC55 K4S641632E-TC70 K4S641632E-TL1H K4S641632E-TL1L K4S641632E-TL50 K4S641632E-TL55 K4S641632E-TL60 K4S641632E-TL70 K4S641632E-TL75 K4S641632E-TC75 K4S641632E K4S641632E-TC60
Description 4M x 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
64mbit SDRAM

File Size 127.89K  /  10 Page

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    Winbond Electronics Corp
http://
Winbond Electronics, Corp.
Part No. W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I
Description 1m × 4 banks × 16 BITS SDRAM
1m 4 banks 16 BITS SDRAM 4M x 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54

File Size 1,182.51K  /  43 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
Description 2M x 4 banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 banks x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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For 64mbit 1m x 16bit x 4 banks by Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | <14> | 15 |   

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