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Sanyo
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| Part No. |
2SC5228
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| OCR Text |
...0.95
0.5
[2SC5228]
0.4 4 3
0.16 0 to 0.1
1
2 0.6
0.5
0.95 0.85 2.9
1.5
2.5
Specifications
Absolute Maximum Rat...684 0.565 0.497 0.459 0.438 0.420 0.411 0.400 0.396 S22 -14.2 -25.8 -39.7 -46.8 -51.4 -55.1 -58.3 -... |
| Description |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier Applications
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| File Size |
127.57K /
5 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120BNS FN4649 HGTP1N120BN
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| OCR Text |
...rt Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 1200 5.3 2.7 6 20... |
| Description |
5.3A/ 1200V/ NPT Series N-Channel IGBT
5.3A, 1200V, NPT Series N-Channel IGBT
From old datasheet system
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| File Size |
71.00K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120CNS FN4652 HGTP1N120CN
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| OCR Text |
...rt Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC Short Circuit Withstand Time (Note 3) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1200 6.2 3.2 6 20 3... |
| Description |
From old datasheet system
6.2A 1200V NPT Series N-Channel IGBT
6.2A, 1200V, NPT Series N-Channel IGBT
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| File Size |
76.20K /
7 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411
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| OCR Text |
...IN 600 4.5 96 TYP 1.6 1.7 4.9 7.3 51 68 26 23 150 62 304 250 22 23 280 112 500 660 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 295 175 525 800 UNITS V A mA V V V nA A V nC nC ns ns ns ns J J ns ns ns ns J J
Collector to Emitter Breakdown V... |
| Description |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
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| File Size |
116.56K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60A4DS HGTP12N60A4D HGTG12N60A4D FN4697
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| OCR Text |
3
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated hi...684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,... |
| Description |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
352.20K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60C3DS HGTP12N60C3D FN4261
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| OCR Text |
...oC TC = 25oC TC = 150oC MIN 600 3.0 VCE(PK) = 480V VCE(PK) = 600V 80 24 TYP 1.65 1.85 1.80 2.0 5.0 MAX 250 2.0 2.0 2.2 2.2 2.4 6.0 100 UNITS V A mA V V V V V nA A A
Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Curr... |
| Description |
24 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
98.36K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60C3S HGTP12N60C3 FN4040
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| OCR Text |
...TC = 150oC TC = 25oC MIN 600 24 3.0 80 24 TYP 30 1.65 1.85 5.0 MAX 250 1.0 2.0 2.2 6.0 100 UNITS V V A mA V V V nA A A
Collector to Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector to Emitter Leakage Current Collec... |
| Description |
24A/ 600V/ UFS Series N-Channel IGBTs
24A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
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| File Size |
118.57K /
6 Page |
View
it Online |
Download Datasheet |
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