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  3.5a 2.5a Datasheet PDF File

For 3.5a 2.5a Found Datasheets File :: 60422    Search Time::2.172ms    
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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ... 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM...5A 1.9A Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 60 40 15V V(BR)DSS tp ...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ...or 10 seconds Max. 21 15 84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C T...5A 12A VD S L D R IV E R 600 RG 20V D .U .T IA S tp + - VD D A 0 .0 1 ...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

File Size 193.12K  /  10 Page

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ...S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic ...5A 12A VDS L D R IV E R 600 RG 20V tp D .U .T IA S + V - DD 400 A 0 ...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...se Leakage --- Typ. --- 0.021 6.3 9.8 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA...5A, VGS = 0V TJ = 125C, IS = 35.5A, VGS = 0V TJ = 25C, IF = 35.5A, VR=20V di/dt = 100A/s TJ = 125...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3708 IRF3708L IRF3708S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3708 IRF3708L IRF3708S
OCR Text .... --- 24 6.7 5.8 14 7.2 50 17.6 3.7 2417 707 52 Max. Units Conditions --- S VDS = 15V, ID = 50A --- ID = 24.8A --- nC VDS = 15V --- VGS = 4.5V 21 VGS = 0V, ID = 24.8A, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 0.6 --- VGS = 4.5V ...
Description Power MOSFET(Vdss=30V, Rds(on)max=12mohm, Id=62A) 功率MOSFET(减振钢板基本\u003d 30V的,的Rdson)最大值\u003d 12mohm,身份证\u003d 62A条)
Power MOSFET(Vdss=30V/ Rds(on)max=12mohm/ Id=62A)

File Size 137.00K  /  10 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... D D D ID 20A S S 1 2 3 4 8 7 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage...5A 7.5A BOTTOM 16A TOP 100 VDS L DRIVER RG 20V VGS D.U.T IAS tp + V - DD A ...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...or 10 seconds Max. 17 12 60 3.8 79 0.53 20 150 A 7.9 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ mJ V/ns C Ther...5A I D , D rain-to-So urce C urren t (A ) 2.5 T J = 2 5 C T J = 1 75 C 2.0 10 1.5 ...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ...S 20V P-Ch -20V 2 7 3 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5a P-CHANNEL MOSFET Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ T C = 25C ID @ T C = 70C IDM PD @T C = 25C VGS dv/dt TJ, TST...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ... Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw ...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ... Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.7 2.3 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D2 VDS RDS(on) Qg QSW ...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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For 3.5a 2.5a Found Datasheets File :: 60422    Search Time::2.172ms    
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