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  3-300s Datasheet PDF File

For 3-300s Found Datasheets File :: 11916    Search Time::2.641ms    
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    SSDI[Solid States Devices, Inc]
Part No. SPD5811TXV SPD5807 SPD5807ASMS SPD5807ASMSS SPD5807ASMSTX SPD5807ASMSTXV SPD5807S SPD5807SMS SPD5807SMSS SPD5807SMSTX SPD5807SMSTXV SPD5807TX SPD5807TXV SPD5809 SPD5809ASMS SPD5809ASMSS SPD5809ASMSTX SPD5809ASMSTXV SPD5809S SPD5809SMS SPD5809SMSS SPD5809SMSTX SPD5809SMSTXV SPD5809TX SPD5809TXV SPD5811 SPD5811ASMS SPD5811ASMSS SPD5811ASMSTX SPD5811ASMSTXV SPD5811S SPD5811SMS SPD5811SMSS SPD5811SMSTX SPD5811SMSTXV SPD5811TX
OCR Text ... FEATURES: MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage SPD5807 SPD5809 SPD5811 SYMBOL VRRM ...300s pulse IF = 6.0 Adc , TA = -55C, 300s pulse Rated VR, TA = +25C, 300s pulse minimum Rated VR, TA...
Description 6.0 AMPS 50 - 150 VOLTS 40 ns HYPERFAST RECOVERY RECTIFIER

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    SSDI[Solid States Devices, Inc]
Part No. SPD630SMS SPD605 SPD605SMS SPD610 SPD620 SPD630
OCR Text ... FEATURES: MAXIMUM RATINGS 3/ RATING Peak Repetitive Reverse Voltage And DC Blocking Voltage SPD605 SPD610 SPD620 SPD630 SYMBOL V...300s pulse IF = 6.0 Adc , TA = -55C, 300s pulse Rated VR, TA = +25C, 300s pulse minimum Rated VR, TA...
Description 6.0 AMPS 50 - 300 VOLTS 40 ns HYPERFAST RECOVERY RECTIFIER

File Size 144.38K  /  2 Page

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    ZVN4424G

Zetex Semiconductors
Part No. ZVN4424G
OCR Text 3 * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipmen...300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns ...
Description N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 43.36K  /  4 Page

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    ZVN4424Z

Diodes Incorporated
ZETEX[Zetex Semiconductors]
Part No. ZVN4424Z
OCR Text 3 * Low threshold and Fast switching APPLICATIONS * Earth recall and dialling switches * Electronic hook switches * Battery powered equipmen...300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns ...
Description SOT89 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

File Size 68.80K  /  4 Page

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    GP30B120KD-E

International Rectifier
Part No. GP30B120KD-E
OCR Text ... pulsed collector current (fig.3, fig. ct.5) 120 i lm clamped inductive load current (fig.4, fig. ct.2) 120 a i f @ t c = 100c diode co...300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v g...
Description Search --To IRGP30B120KD-E

File Size 171.17K  /  12 Page

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    GP30B120KD-EP

International Rectifier
Part No. GP30B120KD-EP
OCR Text ... pulsed collector current (fig.3, fig. ct.5) 120 i lm clamped inductive load current (fig.4, fig. ct.2) 120 a i f @ t c = 100c diode co...300s 0 5 10 15 20 25 30 35 40 45 50 55 60 0123456 v ce (v) i c ( a ) v ge = 18v v ge = 15v v g...
Description Search --To IRGP30B120KD-EP

File Size 203.70K  /  12 Page

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    SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
Solid State Devices, Inc.
Part No. SSR2010DRJ SSR2010CAJ SSR2010CTJ SSR2010DJ SR2010CAJDB
OCR Text ... S = S Level Lead Bending: 3/ __ = Straight UB = Up Bend DB = Down Bend Package: 3/ J = TO-257 CT = Common Cathode Configurati...300s Pulse) (IF = 5 Adc, TA = 25C, 300s Pulse) (IF = 10 Adc, TA = 25C, 300s Pulse) Instantaneous For...
Description 20 AMPS 100 VOLTS SCHOTTKY RECTIFER
20 AMPS, 100 VOLTS CENTERTAP SCHOTTKY RECTIFIER 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-257AA

File Size 136.70K  /  2 Page

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    IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL

International Rectifier, Corp.
Fairchild Semiconductor
IRF[International Rectifier]
Part No. IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL
OCR Text ... or M3 screw Max. 44 32 180 3.8 320 2.1 30 9.5 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C The...300s PULSE WIDTH Tj = 25C 300s PULSE WIDTH Tj = 175C 0.1 100 0.1 1 10 100 0.1 0.1 1 10 VDS...
Description Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)

File Size 132.03K  /  11 Page

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    IRGP20B120UD-E IRGP20B120

IRF[International Rectifier]
Part No. IRGP20B120UD-E IRGP20B120
OCR Text ... VCES = 1200V VCE(on) typ. = 3.05V G VGE = 15V, IC = 20A, 25C E N-channel Benefits * Benchmark Efficiency Above 20KHz * Optim...300s 60 55 50 45 40 (A) 35 30 25 20 15 10 5 0 0 1 2 3 V CE (V) 4 5 6 V GE = 18V V GE = 15V V GE = 1...
Description 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 136.29K  /  12 Page

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    FDS9958

Fairchild Semiconductor
Part No. FDS9958
OCR Text ...D1 8 D2 D2 D1 5 6 7 Q1 Q2 4 3 2 1 G2 S2 G1 S1 MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ,...300s, Duty cycle < 2.0%. 3. UIL condition: Starting TJ = 25C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10...
Description -60V Dual P-Channel PowerTrenchMOSFET
Dual P-Channel PowerTrench㈢ MOSFET
Dual P-Channel PowerTrench? MOSFET

File Size 216.16K  /  6 Page

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For 3-300s Found Datasheets File :: 11916    Search Time::2.641ms    
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