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ELNA CO., Ltd.
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Part No. |
EDI2AG27265V10D1
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Description |
2x64Kx72, 3.3V,10ns, sync/sync Burst SRAM Module(2x64Kx72, 3.3V0ns,同步/同步脉冲静态RAM模块) 2x64Kx72.3伏,10纳秒,同同步突发静态存储器模块x64Kx72.3伏,10纳秒,同同步脉冲静态内存模块)
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File Size |
2,756.97K /
11 Page |
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it Online |
Download Datasheet |
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Micron Technology, Inc.
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Part No. |
MT55L128L32P1 MT55L256V18P1 MT55L256L18P1 MT55L128L36P1 MT55L128V32P1
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Description |
3.3V I/O28K x 32,flow-through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 2.5V I/O56K x 18,flow-through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 3.3V I/O56K x 18,flow-through ZBT SRAM(3.3V输入/输出,4Mb流通式同步静态存储器) 3.3V的I / O56 × 18,流量通过ZBT SRAM的电压(3.3V输入/输出Mb的流通式同步静态存储器 3.3V I/O28K x 36,flow-through ZBT SRAM(3.3V或输输出,4Mb流通式同步静态存储器) 3.3V的I / O28K的36,流量通过ZBT SRAM的电压(3.3V或输输出Mb的流通式同步静态存储器 2.5V I/O28K x 32,flow-through ZBT SRAM(2.5V输入/输出,4Mb流通式同步静态存储器) 2.5VI / O28K的32,流量通过ZBT SRAM的电压(2.5V输入/输出Mb的流通式同步静态存储器
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File Size |
426.03K /
25 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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