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  256mb Datasheet PDF File

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    HYS72D64020GU-7F-B HYS64D64020GU-8-B HYS72D64020GU-7-B HYS72D32000GU-7F-B HYS64D32000GU-7-B HYS72D64320GU-5-B HYS64D3230

Infineon Technologies AG
Infineon Technologies A...
Part No. HYS72D64020GU-7F-B HYS64D64020GU-8-B HYS72D64020GU-7-B HYS72D32000GU-7F-B HYS64D32000GU-7-B HYS72D64320GU-5-B HYS64D32300GU-5-B HYS64D16301GU-7-B HYS64D16301GU-8-B
OCR Text ...u-5-b pc3200u-30330-a0 one rank 256mb dimm 256 mbit ( 8) hys72d32300gu-5-b pc3200u-30330-a0 one rank 256mb ecc-dimm 256 mbit ( 8) hys64d64320gu-5-b pc3200u-30330-b0 two ranks 512mb dimm 256 mbit ( 8) hys72d64320gu-5-b pc3200u-30330-b0 tw...
Description    184-Pin Unbuffered Dual-In-Line Memory Modules
RES 1.8K OHM 1/16W 5% 0402 SMD
184-Pin Unbuffered Dual-In-Line Memory Modules 184引脚缓冲双列内存模组

File Size 821.04K  /  51 Page

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    Micron Technology, Inc.
Part No. MT16LSDT6464AGI-133 MT8LSDT3264AGI-133
OCR Text ... ?2002, micron technology inc. 256mb / 512mb (x64) 168-pin sdram dimms synchronous dram module mt8lsdt3264a(i) - 256mb mt16lsdt6464a(i) - 512mb for the latest data sheet, please refer to the micron web site: www.micron.com/moduleds fea...
Description SYNCHRONOUS DRAM MODULE 同步DRAM模块

File Size 590.32K  /  24 Page

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    HYS64T64900EU-3.7-B2

QIMONDA AG
Part No. HYS64T64900EU-3.7-B2
OCR Text ...chip organization ? 1gb, 512mb, 256mb modules built with 512mbit ddr2 sdrams in p-tfbga-60 a nd pg-tfbga-84 chipsize packages. ? standard double-data-rate-two synchronous drams (ddr2 sdram) with a single + 1.8 v ( 0.1 v) power supply....
Description 64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240

File Size 2,057.15K  /  91 Page

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    NANYA TECHNOLOGY CORP
Part No. NT5SV16M16CS-6KI
OCR Text 256mb synchronous dram 1 rev 1.1 consumer oct 2010 ? nanya technology corporation nanya reserves the right to change products and specifications without notice. features ? high performance: ? single pulsed ra...
Description 16M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54

File Size 738.28K  /  65 Page

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    MT48LC16LFFG MT48H16M16LFBG MT48V16MLFFG

Micron Technology
Part No. MT48LC16LFFG MT48H16M16LFBG MT48V16MLFFG
OCR Text 256mb: x16 mobile sdram mobileramy26l_b.p65 ? pub. 04/03 ?2003 micron technology, inc. all rights reserved. 256mb: x16 mobile sdram preliminary ? ? products and specifications discussed herein are for evaluation and reference pur...
Description (MT48xx16x16LFxG) 256M x 16 Mobile SDRAM

File Size 1,681.78K  /  61 Page

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    M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. M470T6554CZ0-CCC M470T6554CZ0-CD5 M470T6554CZ0-CE6 M470T6554CZ0-CE7 M470T6554CZ0-CLCC M470T6554CZ0-CLD5 M470T6554CZ0-CLE6 M470T6554CZ0-CLE7 M470T6554CZ3-CCC M470T6554CZ3-CD5 M470T6554CZ3-CE6 M470T6554CZ3-CE7 M470T6554CZ3-CLCC M470T6554CZ3-CLD5 M470T6554CZ3-CLE6 M470T6554CZ3-CLE7 M470T3354CZX M470T2953CZ0-CCC M470T2953CZ0-CD5 M470T2953CZ0-CE6 M470T2953CZ0-CE7 M470T2953CZ0-CLCC M470T2953CZ0-CLD5 M470T2953CZ0-CLE6 M470T2953CZ0-CLE7 M470T2953CZ3-CCC M470T2953CZ3-CD5 M470T2953CZ3-CE6 M470T2953CZ3-CE7 M470T2953CZ3-CLCC M470T2953CZ3-CLD5 M470T2953CZ3-CLE6 M470T2953CZ3-CLE7 M470T3354CZ0-CCC M470T3354CZ0-CD5 M470T3354CZ0-CE6 M470T3354CZ0-CE7 M470T3354CZ0-CLCC M470T3354CZ0-CLD5 M470T3354CZ0-CLE6 M470T3354CZ0-CLE7 M470T3354CZ3 M470T3354CZ3-CCC M470T3354CZ3-CD5 M470T3354CZ3-CE6 M470T3354CZ3-CE7 M470T3354CZ3-CLCC M470T3354CZ3-CLD5 M470T3354CZ3-CLE6 M470T3354CZ3-CLE7
OCR Text 256mb, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE ...
Description 40 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC 内存缓冲的SODIMM 200pin缓冲的SODIMM上的512Mb基于C模具64非ECC
PATCHCORD SQ SCKT-ALLIG CLIP RED

File Size 325.88K  /  18 Page

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    M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470T6554CZ0-D5 M470T6554CZ0-E6 M470T3354CZ0-E6 M470T2953CZ0 M470T2953CZ0-

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M470T6554CZ0 M470T6554CZ0-CC M470T6554CZ0-CD6 M470T6554CZ0-D5 M470T6554CZ0-E6 M470T3354CZ0-E6 M470T2953CZ0 M470T2953CZ0-CC M470T2953CZ0-CD6 M470T2953CZ0-D5 M470T2953CZ0-E6 M470T3354CZ0-CC M470T3354CZ0-CD6 M470T3354CZ0-D5
OCR Text 256mb, 512MB, 1GB Unbuffered SODIMMs DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 512Mb C-die 64bit Non-ECC Revision 1.1 March 2005 Rev. 1.1 Mar. 2005 256mb, 512MB, 1GB Unbuffered SODIMMs DDR2 Unbuffe...
Description DDR2 Unbuffered SODIMM

File Size 267.92K  /  20 Page

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    SST12LP08

Silicon Storage Technology, Inc
Part No. SST12LP08
OCR Text ...C standy current: 65a (typ) for 256mb C 52 mhz continuous synchronous read current: 21ma (typ), 24ma (max) ? security C one-time programmable register: 64 otp bits, programmed with unique information from mi- cron; 2112 otp bits available f...
Description 2.4 GHz High-Power, High-Gain Power Amplifier

File Size 1,208.02K  /  98 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Panasonic, Corp.
Samsung Semiconductor Co., Ltd.
Part No. K4N56163QF-GC37 K4N56163QF-GC30 K4N56163QF-GC25
OCR Text ...-gc37 266mhz 533mbps/pin the 256mb gddr2 sdram chip is organized as 4mbit x 16 i/o x 4banks banks device. this synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000mb/sec/p in for general applicatio...
Description 256mbit gDDR2 SDRAM 56Mbit GDDR2 SDRAM

File Size 1,272.03K  /  73 Page

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