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POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS50KM-06
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| OCR Text |
.................................. 22m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 65ns Viso ................................................ |
| Description |
CAP 1500PF 200V 1% NP0(C0G) AXIAL RAD.20 BULK R-MIL-PRF-20 STANDOFF
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
47.10K /
4 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
FS50SM-06
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| OCR Text |
.................................. 22m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 65ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-3P... |
| Description |
HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
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| File Size |
40.21K /
4 Page |
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it Online |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS50UM-06
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| OCR Text |
.................................. 22m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ............. 65ns
q
TO-220
APPLICATION Motor control, Lamp ... |
| Description |
BK Precision Triple Output DC Power Supply, Output Voltage: Variable 0-30 VDC, Fixed 12 VDC ( 5 %), Fixed 5 VDC ( 5 %), Output Current: 0-5 A, 0-500 mA, 0-500 mA, Metering Display: 2 Digital 3 Digit LCD, Ammeter Range: 0-.999 A 高速开关使
HIGH-SPEED SWITCHING USE
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| File Size |
39.36K /
4 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
GF6968A
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| OCR Text |
...
Low VGS(th) VDS 20V RDS(ON) 22m ID 6.2A
D 8 S2 7 S2 6 G2 5
(R)
uct Prod New
0.028 (0.70) 0.020 (0.50)
0.005 (0.127)
1 D
2 S1
3 S1
4 G1
0.260 (6.60) 0.244 (6.20)
1 4
0.260 (6.60) min.
0.028 (0.70) 0.020 (0.... |
| Description |
Common-Drain Dual N-Channel MOSFET
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| File Size |
149.26K /
5 Page |
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it Online |
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KEC[KEC(Korea Electronics)]
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| Part No. |
KMB8D2N60QA
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| OCR Text |
...n-Source ON Resistance. RDS(ON)=22m (Max.) @ VGS=10V RDS(ON)=27m (Max.) @ VGS=4.5V Super High Dense Cell Design
1 4 B1 B2 8 5 A
MOSFET Maximum Ratings (Ta=25
CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC@TA=25 Drain Curren... |
| Description |
N-Ch Trench MOSFET
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| File Size |
463.37K /
4 Page |
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it Online |
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MICRON[Micron Technology]
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| Part No. |
MT28F160A3
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| OCR Text |
...MT28F160A3 is manufactured on 0.22m process technology in a 48-ball FBGA package. The device has an I/O supply of 2.7V (MIN). Programming in production is
1 Meg x 16 Enhanced Boot Block Flash Memory MT28F160A3_3.p65 - Rev. 3, Pub. 8/01
... |
| Description |
FLASH MEMORY
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| File Size |
311.35K /
28 Page |
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it Online |
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MICRON[Micron Technology]
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| Part No. |
MT28F160C34
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| OCR Text |
...T28F160C34 is manufactured on 0.22m process technology in a 46-ball FBGA package. The embedded WORD WRITE and BLOCK ERASE functions are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves ... |
| Description |
FLASH MEMORY
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| File Size |
314.37K /
28 Page |
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it Online |
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MICRON[Micron Technology]
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| Part No. |
MT28F160C3
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| OCR Text |
...MT28F160C3 is manufactured on 0.22m process technology in a 48-ball FBGA package. The device
1 Meg x 16 3V Enhanced+ Boot Block Flash Memory MT28F160C3_3.p65 - Rev. 3, Pub. 8/01
DEVICE MARKING
Due to the size of the package, Micron's s... |
| Description |
FLASH MEMORY
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| File Size |
318.31K /
28 Page |
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it Online |
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SUMIDA[Sumida Corporation]
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| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
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| OCR Text |
... 5.6m 6.8m 8.2m 10m 12m 15m 18m 22m 27m 33m 39m 47m
D.C.R.() : Max. Saturation Temperature Rated Rise Rated D.C.R.() : Current Current Max. (A) *A (A) *III
RCH-875
Saturation Temperature Rated Rise Rated D.C.R.() : Current Current Max.... |
| Description |
POWER INDUCTORS
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| File Size |
170.29K /
2 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SLE66C24PEM5 SLE66C24PE SLE66C24PEC
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| OCR Text |
...ion set for large memories in 0.22m CMOS Technology, 68-Kbyte ROM, 2304 Bytes RAM, 2-Kbyte EEPROM and Dual Key Triple DES Accelerator
Features
* * *
New
New
* *
8/16-bit microcomputer in 0.22 m CMOS technology Instruction set ... |
| Description |
Security & Chip Card ICs
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| File Size |
59.62K /
8 Page |
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it Online |
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Price and Availability
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