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IRF[International Rectifier]
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| Part No. |
IRF6646
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| OCR Text |
...2.0 12 14 14 18 1.0 17 20 31 12 2060 480 120 2180 310 --- --- --- --- --- --- --- --- --- --- --- --- --- pF VGS = 0V VDS = 25V ns nC
Conditions
--- --- 9.5 4.8 --- 20 250 100 -100 --- 50 --- ---
VGS = 0V, ID = 250A V V/C Referen... |
| Description |
DirectFET Power MOSFET
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| File Size |
236.64K /
9 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MRF5P20180R6 MRF5P20180
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| OCR Text |
...0 1940 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2-Carrier W-CDMA Broadband Performance
16 15.5 G ps , POWER GAIN (dB) 15 14 13 12 11.5 11 1 14.5 13.5 12.5 IDQ = 2400 mA 2000 mA... |
| Description |
MRF5P20180R6 1990 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
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| File Size |
579.07K /
8 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5P21045NR1
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| OCR Text |
...14.4 14.2 IRL 14 13.8 13.6 13.4 2060 ACPR 2080 2100 2120 2140 2160 2180 2200 IM3 -32 -36 -40 -44 2220 Gps D VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 500 mA, 2-Carrier W-CDMA 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0... |
| Description |
RF Power Field-Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
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| File Size |
411.71K /
11 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S19090HSR3 MRF5S19090HR3
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| OCR Text |
...0 1940 1960 1980 2000 2020 2040 2060 2080 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier N - CDMA Broadband Performance
17 IDQ = 1300 mA G ps , POWER GAIN (dB) 16 1100 mA 850 mA 650 mA 14 450 mA VDD = 28 Vdc f1 = 1958.75 MHz, f2 = 1961.25 M... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
413.60K /
12 Page |
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it Online |
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FREESCALE SEMICONDUCTOR INC
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S19090LSR3 MRF5S19090LR3
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| OCR Text |
...0 1940 1960 1980 2000 2020 2040 2060 2080
IRL, INPUT RETURN LOSS (dB)
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) 40 35 30 25 20 Gps ACPR IM3 VDD = 28 Vdc, IDQ = 850 mA f1 = ... |
| Description |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs
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| File Size |
409.09K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21045NR1
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| OCR Text |
...4.6 14.4 14.2 14 13.8 13.6 13.4 2060 IM3 ACPR 2080 2100 2120 2140 2160 2180 2200 IRL Gps VDD = 28 Vdc, Pout = 10 W (Avg.), IDQ = 500 mA 2-Carrier W-CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (C... |
| Description |
RF Power Field Effect Transistors
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| File Size |
551.60K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21100HSR3 MRF5S21100HR3
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| OCR Text |
...-10 -20 -30 -40 -50
-45 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
16 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc)
-15 -20 -25 -30 -35 -40 ... |
| Description |
To be Used in class AB for PCN-PCS/cellularradio and WLL applications.
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| File Size |
388.49K /
12 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| OCR Text |
...RAIN EFFICIENCY (%)
-45 2040 2060 2080 2100 2120 2140 2160 2180 2200 2220 2240 f, FREQUENCY (MHz)
Freescale Semiconductor, Inc...
Figure 3. 2 - Carrier W - DCMA Broadband Performance
16 IM3, THIRD ORDER INTERMODULATION DISTORTIO... |
| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S21130HSR3 MRF5S21130HR3
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| OCR Text |
... (dBc) -10 -15 -20 -25 -30
6 2060
2080
2100
2120
2140
2160
2180
2200
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 28 Watts Avg.
15 IMD, THIRD ORDER INTERMODULATION DISTORTIO... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
379.13K /
12 Page |
View
it Online |
Download Datasheet |
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MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S
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| OCR Text |
... (dBc) -10 -15 -20 -25 -30
6 2060
2080
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance
15 IMD3, THIRD ORDER INTERMODULATION DISTORTION (dBc) 14.5 G ps , POWER GAIN (dB) 14 IDQ = 1600 mA 1400 mA 1200 mA 100... |
| Description |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
395.61K /
12 Page |
View
it Online |
Download Datasheet |
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