2-200s pdf Datasheet P14 Full Text Search --- IC-ON-LINE


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2-200s Datasheet PDF File

For 2-200s Found Datasheets File :: 1736 Search Time::2.484ms
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				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
Part No.	DF005S-DF10S DF005S DF10S DF01S DF02S DF04S DF06S DF08S DF10
OCR Text	... ALSO AVAILABLE BODY - - 0.102 (2.591)* 0.095 (2.413)* Dimensions are in: inches (mm) 0.009 (0.229) Typical 0.310 (7.874) 0.290 (7.36...200s 0.1 TA = 25 C 0.01 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) 1.4 0.01 0 2...
Description	1.5 Ampere Bridge Rectifiers(1.5安培桥整流器)
File Size	32.82K / 3 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	FMMT3905 FMMT3906
OCR Text	...IC=-10mA IB1=-IB2=-1mA (See Fig.2) UNIT CONDITIONS Delay and Rise Time Equivalent Test Circuit Storage and Fall Time Equivalent Test Circuit PAGE NUMBER
Description	SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS
File Size	173.90K / 2 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K1S321611C K1S321611C-FI70 K1S321611C-I
OCR Text	...mark Advanced Preliminary 0.2 Revised August 13, 2003 - Corrected errorta '48-TBGA' under PIN DESCRIPTION to '48-FBGA' on page2 Pr...200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Mi...
Description	2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器
File Size	178.12K / 10 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K1S32161CC K1S32161CC-FI70 K1S32161CC-I
OCR Text	...M x16 bit Power Supply Voltage: 2.7~3.1V Three State Outputs Compatible with Low Power SRAM * Support 4 page read mode * Package Type: 48-FB...200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Mi...
Description	2Mx16 bit Page Mode Uni-Transistor Random Access Memory
File Size	184.44K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K1S3216B1C K1S3216B1C-I
OCR Text	... bit Power Supply Voltage: 1.7V~2.1V Three State Outputs Compatible with Low Power SRAM Dual Chip selection support * Package Type: 48-FBGA-...200s with CS1=high.or CS2=low. UtRAM TIMING WAVEFORM OF POWER UP(1) (CS1 controlled) VCC(Mi...
Description	2Mx16 bit Uni-Transistor Random Access Memory
File Size	179.11K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics
Part No.	M48T37 M48T37V M48T37V-10MH1 M48T37V-10MH1TR M48T37V-10MH6 M48T37V-10MH6TR M48T37V-70MH1 M48T37V-70MH1TR M48T37V-70MH6 M48T37V-70MH6TR M48T37VMH M48T37VSH M48T37Y M48T37Y-10MH1 M48T37Y-10MH1TR M48T37Y-10MH6 M48T37Y-10MH6TR M48T37Y-70MH1 M48T37Y-70MH1TR M48T37Y-70MH6 M48T37Y-70MH6TR M48T37YMH M48T37YSH
OCR Text	...7Y: 4.2V VPFD 4.5V - M48T37V: 2.7V VPFD 3.0V 44 SNAPHAT (SH) Battery s s s s s 1 SOH44 (MH) s PACKAGING INCLUDE...200s after VCC passes VPFD (min). 2. VPFD (min) to VSS fall time of less than tFB may cause corrupti...
Description	3.3V-5V 256 Kbit 32Kb x8 TIMEKEEPER SRAM
File Size	127.19K / 20 Page	View it Online	Download Datasheet

				ETC Shindengen Electric Mfg.Co.Ltd
Part No.	2SK3009
OCR Text	2 Series Power MOSFET N-Channel Enhancement type 2SK3009 (F8S60VX2) 600V 8A FEATURES *oe Input capacitance (Ciss) is small. Especiall...200s 1 R DS(ON) limit 1ms 10ms 0.1 DC Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-Sou...
Description	VX-2 Series Power MOSFET(600V 8A)
File Size	345.68K / 10 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK3012
OCR Text	2 Series Power MOSFET N-Channel Enhancement type 2SK3012 (F16W60VX2) 600V 12A FEATURES Input capacitance (Ciss) is small. OUTLINE...200s R DS(ON) limit 1 1ms 10ms DC 0.1 Tc = 25C Single Pulse 0.01 1 10 100 1000 Drain-...
Description	VX-2 Series Power MOSFET(600V 12A)
File Size	417.87K / 12 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK3013
OCR Text	2 Series Power MOSFET N-Channel Enhancement type 2SK3013 (FP16W60VX2) 600V 16A FEATURES Input capacitance (Ciss) is small. OUTLIN...200s Drain Current ID [A] R DS(ON) limit 1 1ms 10ms 0.1 DC Tc = 25C Single Puls...
Description	VX-2 Series Power MOSFET(600V 16A)
File Size	419.38K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies A... INFINEON[Infineon Technologies AG]
Part No.	BTS3110N
OCR Text	...tation Analog driving possible 2 1 VPS05163 Product Summary Drain source voltage On-state resistance Nominal load current Clamping ener...200s Parameter: TJstart 12 A I D(lim) 8 -40C 25C 6 85C 4 150C 2 0 0 ...
Description	Smart Lowside Power Switch Smart Low Side Switches - 42V, 200mΩ, 1.4A, SOT223
File Size	205.73K / 10 Page	View it Online	Download Datasheet

For 2-200s Found Datasheets File :: 1736 Search Time::2.484ms
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