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  19-20 Datasheet PDF File

For 19-20 Found Datasheets File :: 434073    Search Time::8.312ms    
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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ... s Features q q q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current tra...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 57.59K  /  3 Page

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ....2 s Features q q q 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.16K  /  3 Page

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ...eatures q q q q 4.60.2 3.20.1 9.90.3 2.90.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 61.01K  /  3 Page

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    2SC5036 2SC5036A

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5036 2SC5036A
OCR Text ...tures q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

File Size 58.72K  /  3 Page

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    2SC5037 2SC5037A

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5037 2SC5037A
OCR Text ...tures q q q q q 4.60.2 3.20.1 9.90.3 2.90.2 4.10.2 8.00.2 Solder Dip High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack ...
Description Silicon NPN triple diffusion planar type

File Size 62.18K  /  3 Page

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    2SC5049

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Toshiba Semiconductor
Part No. 2SC5049
OCR Text ...e figure PG = 15.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5049 Absolute ...9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference...
Description Silicon NPN Epitaxial npn型硅外延

File Size 23.39K  /  5 Page

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    2SC5050

HITACHI[Hitachi Semiconductor]
Part No. 2SC5050
OCR Text ...e figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5050 Absolute ...9 0.2 2.95 0.2 0.3 + 0.2 1.1 - 0.1 0.65 2.8 Hitachi Code JEDEC EIAJ Weight (reference...
Description Silicon NPN Epitaxial

File Size 23.65K  /  5 Page

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    2SC5051

HITACHI[Hitachi Semiconductor]
Part No. 2SC5051
OCR Text ...e figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline CMPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC5051 Absol...9 0.1 0.65 0.65 1.3 0.2 0.425 0.1 0.3 + 0.05 - 0.1 0.3 + 0.05 - Hitachi Code JEDEC ...
Description Silicon NPN Epitaxial

File Size 23.89K  /  5 Page

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    2SC5060 2SC5060TV2M

Rohm CO.,LTD.
Part No. 2SC5060 2SC5060TV2M
OCR Text 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power su...9 (1) (2) (3) 1.05 14.5 4.4 0.45 !Equivalent circuit C Taping specifications ...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Power transistor (9010V, 3A)
Power transistor (9010V/ 3A)
SC70/&#181;DFN, Single/Dual Low-Voltage, Low-Power &#181;P Reset Circuits

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    2SC5071

SANKEN[Sanken electric]
Part No. 2SC5071
OCR Text ...0(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4A VCE=12V, IE=-1A VCB=10V...
Description Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

File Size 23.88K  /  1 Page

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