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  16-col Datasheet PDF File

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    M12L128168A-5BIG M12L128168A-5TIG M12L128168A-6BIG M12L128168A-6TIG M12L128168A-7BIG M12L128168A-7TIG M12L128168A1

Elite Semiconductor Memory Technology Inc.
Part No. M12L128168A-5BIG M12L128168A-5TIG M12L128168A-6BIG M12L128168A-6TIG M12L128168A-7BIG M12L128168A-7TIG M12L128168A1
OCR Text 16 Bit x 4 Banks Synchronous DRAM ORDERING INFORMATION PRODUCT NO. M12L128168A-5TIG M12L128168A-5BIG M12L128168A-6TIG M12L128168A-6BIG M1...col. address delay Last data in to row precharge Last data in to burst stop Refresh period (4,096 ro...
Description 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
2M x 16 Bit x 4 Banks Synchronous DRAM

File Size 361.58K  /  22 Page

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    KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10

ETC[ETC]
Samsung semiconductor
Part No. KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Revision 1.4 June 1999 Samsung Electronics reserves the right to change produc...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,126.95K  /  43 Page

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    KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text ...nized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG s high performance CMOS technology. Synchronous design allows precise cycle...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM

File Size 124.02K  /  11 Page

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    KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F1

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F10 KM416S8030BT-G/F8 KM416S8030BT-G/FA KM416S8030BT-G/FH KM416S8030BT-G/FL
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 132.04K  /  11 Page

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    KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
OCR Text ...nized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle ...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Programming Registe...
Description 2M x 16Bit x 4 Banks Synchronous DRAM

File Size 116.68K  /  10 Page

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    LT1533 LT1533C LT1533CS LT1533I LT1533IS 1533F

LINER[Linear Technology]
Part No. LT1533 LT1533C LT1533CS LT1533I LT1533IS 1533F
OCR Text ... The LT1533 is available in the 16-pin narrow SO package. s s s s s s s s Greatly Reduced Conducted and Radiated EMI (<100VP-P in Typi...COL A COL B PGND LT1533 RVSL RCSL 15k 10 VC GND 9 NFB 8 FB 2 T1 1N4148 L1 300H B L2 3...
Description From old datasheet system
Ultralow Noise 1A Switching Regulator

File Size 378.98K  /  20 Page

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    Motorola
Part No. MC145436A
OCR Text ... + 5 V Power Supply Detects All 16 Standard Digits Uses Inexpensive 3.58 MHz Crystal Provides Guard Time Controls to Improve Speech Immunity...COL 1 Xen 697 STD DTMF (Hz) 770 852 941 1 4 7 COL 2 2 5 8 0 1336 COL 3 3 6 9 # 1477 COL 4 A B C D 16...
Description Low Power Dual Tone Multiple Frequency Receiver

File Size 120.96K  /  8 Page

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    CD22202 CD22202E CD22203 CD22203E

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. CD22202 CD22202E CD22203 CD22203E
OCR Text ...ect a selectable group of 12 or 16 standard digits. No front-end pre-filtering is needed. The only externally required components are an ine...COL 0 1209Hz ROW 0 697Hz 1 4 7 * COL 1 1336Hz 2 5 8 0 COL 2 1477Hz 3 6 9 # COL 3 1633Hz A B C D X...
Description 5V Low Power DTMF Receiver 5V的低功耗双音多频接收器

File Size 48.00K  /  6 Page

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    K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
Part No. K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D
OCR Text 16 SDRAM 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Industrial/ExtendedTemperature Revision 1.2 Jan 2003 Samsung Electronics reser...Col. Buffer Latency & Burst Length LRAS LCBR LCKE LRAS LCBR LWE LCAS Timing Register Pro...
Description 1M x 16 SDRAM 100万16内存

File Size 685.66K  /  43 Page

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    CD22859 CD22859E

INTERSIL[Intersil Corporation]
HARRIS
Part No. CD22859 CD22859E
OCR Text ...KAGE NO. TeleCD22859E -40 to 85 16 Ld PDIP E16.3 com, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Features * Mute Drivers On-Chip...COL 1 COL 2 COL 3 COL 4 ROW 1 1 2 3 A 697 (699.1) ROW 2 4 5 6...
Description Monolithic Silicon COS/MOS Dual-Tone Multifrequency Tone Generator

File Size 38.43K  /  5 Page

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