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131072 Datasheet PDF File

For 131072 Found Datasheets File :: 1888 Search Time::1.766ms
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				AMD[Advanced Micro Devices]
Part No.	AM29F200 AM29F200BT-120 AM29F200BT-45 AM29F200BT-50 AM29F200BT-55 AM29F200BT-70 AM29F200BT-90 AM29F200BB-90 AM29F200B AM29F200BB-120 AM29F200BB-45 AM29F200BB-50 AM29F200BB-55 AM29F200BB-70
OCR Text	...y organized as 262,144 bytes or 131,072 words. The 8 bits of data appear on DQ0-DQ7; the 16 bits on DQ0-DQ15. The Am29F200B is offered in 44-pin SO and 48-pin TSOP packages. The device is also available in Known Good Die (KGD) form. For mor...
Description	2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory
File Size	238.14K / 39 Page	View it Online	Download Datasheet

				ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
Part No.	AT17C128A AT17C128A-10JC AT17C128A-10JI AT17C65A AT17C65A-10JC AT17C65A-10JI AT17C256A AT17C256A-10JC AT17C256A-10JI AT17LV65A-10JI AT17LV65A AT17LV65A-10JC AT17LV128A-10JI AT17LV256A-10JI AT17A
OCR Text	131,072 x 1 and 262,144 x 1 bit Serial Memories Designed to Store Configuration Programs for Programmable Gate Arrays * Simple Interface to SRAM FPGAs Requires Only One User I/O Pin * Able to Configure with EPF6000 and EPF8000, Flex 10K...
Description	High Speed CMOS Logic 3-to-8 Line Decoder Demutiplexer with Address Latches 16-PDIP -55 to 125 High Speed CMOS Logic 3-to-8 Line Decoder Demutiplexer with Address Latches 16-SOIC -55 to 125 FPGA Configuration EEPROM 128K X 1 CONFIGURATION MEMORY, PQCC20 FPGA Configuration EEPROM 256K X 1 CONFIGURATION MEMORY, PQCC20 FPGA Configuration EEPROM FPGA配置的EEPROM
File Size	158.67K / 11 Page	View it Online	Download Datasheet

				Atmel, Corp. Atmel Corp. ATMEL[ATMEL Corporation]
Part No.	AT17C128 AT17C128-10JC AT17C128-10JI AT17C128-10PC AT17C128-10PI AT17C128-10SC AT17C128-10SI AT17C65 AT17C65-10JC AT17C65-10JI AT17C65-10PC AT17C65-10PI AT17C65-10SC AT17C65-10SI AT17C256 AT17C256-10JC AT17C256-10JI AT17C256-10PC AT17C256-10PI AT17C256-10SC AT17C256-10SI AT17LV256-10JI AT17LV256-10JC AT17LV128-10JC AT17LV128-10JI AT17LV65-10JC AT17LV65-10JI AT17LV65-10SI AT17LV128-10PC AT17LV128-10PI AT17LV128-10SC AT17LV128-10SI AT17LV256-10PC AT17LV256-10PI AT17LV256-10SC AT17LV256-10SI AT17LV65-10PC AT17LV65-10PI AT17LV65-10SC
OCR Text	131,072 x 1, and 262,144 x 1 bit Serial Memories Designed To Store Configuration Programs For Programmable Gate Arrays * Simple Interface to SRAM FPGAs Requires Only One User I/O Pin * Compatible With AT6000 FPGAs, ATT3000 FPGA, EPF8000...
Description	FPGA Configuration E2PROM 64K X 1 CONFIGURATION MEMORY, PDSO20
File Size	149.02K / 10 Page	View it Online	Download Datasheet

				Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
Part No.	CY7C10191B CY7C10191B-10VC CY7C1019B-12ZC CY7C1019B-15ZI CY7C10191B-10VI CY7C10191B-10ZC CY7C10191B-10ZI CY7C10191B-12VC CY7C10191B-12VI CY7C10191B-12ZC CY7C10191B-12ZI CY7C10191B-15VC CY7C10191B-15VI CY7C10191B-15ZC CY7C10191B-15ZI CY7C1019B CY7C1019B-10VC CY7C1019B-10VI CY7C1019B-10ZC CY7C1019B-10ZI CY7C1019B-12VC CY7C1019B-12VI CY7C1019B-12ZI CY7C1019B-15VC CY7C1019B-15VI CY7C1019B-15ZC
OCR Text	...ce CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. This device has an automatic power-down feature that si...
Description	128K x 8 Static RAM 128K的8静态RAM SOLDER SHELLS FOR 25-POSITION FEMALE D-SUBMINIATURE CONNECTORS, PACKAGE OF 10 128K X 8 STANDARD SRAM, 15 ns, PDSO32 SOLDER SHELLS FOR 25-POSITION MALE D-SUBMINIATURE CONNECTORS, PACKAGE OF 50 128K X 8 STANDARD SRAM, 15 ns, PDSO32 HD15M WATERPROOF D-SUB BACKSHELL KIT
File Size	193.63K / 9 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Eon Silicon Solution
Part No.	EPB018A5 EPB018A5-70 EPB018A7-70 EPB018A9-70
OCR Text	...0.071 -97.3 0.069 -115.9 0.064 -131.4 0.061 -144.1 0.063 -159.2 0.065 179.4 0.067 158.8 0.072 144.7 0.083 132.8 --- S22 --MAG ANG 0.530 -13.5 0.507 -28.8 0.485 -42.6 0.464 -54.2 0.421 -65.4 0.370 -78.6 0.344 -90.7 0.303 -100.7 0.271 -111.2 ...
Description	Super Low Noise High Gain Heterojunction FET
File Size	30.90K / 2 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) ETC HP[Agilent(Hewlett-Packard)] Agilent Technologies, Inc.
Part No.	HBFP-0420-BLK HBFP-0420-TR1 HBFP-0420-TR2 HBFP0420
OCR Text	...604 0.616 0.630 -22.1 -91.4 -131.0 -138.0 -163.4 -174.6 178.9 165.4 153.6 143.2 133.3 123.7 114.1 104.6 95.5 86.0 76.7 68.0 60.4 53.3 46.4 39.2 31.4 29.1 26.0 22.6 21.9 18.7 17.2 16.3 14.4 12.9 11.6 10.5 9.6 8.8 8.0 7.3 6.7 6.1 5.5 4....
Description	High Performance Isolated Collector Silicon Bipolar Transistor 高性能隔离采集硅双极晶体管
File Size	85.25K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
OCR Text	...ndom Access Memory organized as 131,072 words by 8 bits. The K6R1008V1D uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs ...
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size	181.71K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K6R1008C1A- K6R1008C1A-C12 K6R1008C1A-C15 K6R1008C1A-C20 K6R1008C1A-I12 K6R1008C1A-I15 K6R1008C1A-I20 K6R1008C1A-TC20 K6R1008C1A-TI20 K6R1008C1A-JC15 K6R1008C1A-JI15 K6R1008C1A-JI20 K6R1008C1A-TC12 K6R1008C1A-TI12 K6R1008C1A-TI15
OCR Text	...ndom Access Memory organized as 131,072 words by 8 bits. The K6R1008C1A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs ...
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8高速静态内存（5V工作），旋转引脚输出。在商用和工业温度范围操 128Kx8 High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128K x 8 high speed static RAM, 5V operating, 20ns 128K x 8 high speed static RAM, 5V operating, 15ns
File Size	167.22K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K6R1008C1B- K6R1008C1B-C10 K6R1008C1B-C12 K6R1008C1B-C8 K6R1008C1B-I10 K6R1008C1B-I12 K6R1008C1B-I8
OCR Text	...ndom Access Memory organized as 131,072 words by 8 bits. The K6R1008C1B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs ...
Description	128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静电RAM5V工作，旋转频出。在经营商业和工业温度范围 128Kx8 Bit High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速静态RAM5V工作，旋转频出。在经营商业和工业温度范围 128Kx8 Bit High Speed Static RAM5V Operating/ Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
File Size	168.46K / 8 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C1C-C15 K6R1008C1C-I10 K6R1008C1C-I12 K6R1008C1C-I15 K6R1008C1C-J10 K6R1008C1C-J12 K6R1008C1C-J15 K6R1008C1C-T10 K6R1008C1C-T12 K6R1008C1C-T15 K6R1008C1C-P15 K6R1008C1C-L10 K6R1008C1C-L12 K6R1008C1C-L15 K6R1008C1C-P10 K6R1008C1C-P12 K6R1008C1C-JC15 K6R1008C1C-JI12 K6R1008C1C-JI10 K6R1008C1C-JC12
OCR Text	...ndom Access Memory organized as 131,072 words by 8 bits. The K6R1008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs ...
Description	128K x 8 high speed static RAM, 5V operating, 12ns 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围 RES-140 0.0625W 1% THICK FILM 128K x 8 high speed static RAM, 5V operating, 15ns 128K x 8 high speed static RAM, 5V operating, 10ns
File Size	130.06K / 9 Page	View it Online	Download Datasheet

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