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For 11-row Found Datasheets File :: 16235    Search Time::2.296ms    
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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text ...mW/495 mW (max) -- Standby mode 11 mW (max) 0.55 mW (max) (L-version) * Fast page mode capability * 1024 refresh cycles : 16 ms 1024 refresh...Row address strobe Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 ...
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ... A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 VSS DQ...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    Infineon
Part No. HYS72T128000HR-3.7-A HYS72T128000HR-5-A HYS72T128020HR-3.7-A HYS72T128020HR-5-A HYS72T256220HR-5-A HYS72T64000HR-3.7-A HYS72T64000HR-5-A
OCR Text ...-A 512 MB 1Rx8 PC2-3200R-333-11-F1 1 GB 1Rx4 PC2-3200R-333-11-H1 1 GB 2Rx8 PC2-3200R-333-11-G1 2 GB 2Rx4 PC2-3200R-333-11-L1 2 GB 2Rx4 PC...Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Rev...
Description 256MB - 4GB, 240pin

File Size 843.46K  /  54 Page

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    Infineon
Part No. HYS64T256020HU-3.7-A HYS64T256020HU-5-A HYS72T256020HU-3.7-A HYS72T256020HU-5-A
OCR Text ...-4200 2GB 2Rx8 PC2-3200U-333-11-B1 2 Ranks, Non-ECC 2GB 2Rx8 PC2-3200E-333-11-B1 2 Ranks, ECC 1 Gbit (x8 1 Gbit (x8) 1 Gbit (x8 1 Gbit...Row Column Delay (RCD) latency = 4 and Row Pre charge (RP) latency = 4 using the latest JEDEC SPD Re...
Description 256MB - 2GB, 240pin

File Size 651.84K  /  41 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ... A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 ...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ... A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 ...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ... A5 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 ...Row Address Strobe Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Data Out...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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    EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A

Elpida Memory
Part No. EBD11ED8ABFB-6B EBD11ED8ABFB-7B EBD11ED8ABFB-7A
OCR Text ... Pin No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Pin name VREF DQ0 VSS DQ1 DQS0 DQ2 VDD DQ3 NC NC VS...Row address Column address Data input/output Check bit (Data input/output) Row address strobe comman...
Description 1GB Unbuffered DDR SDRAM DIMM EBD11ED8ABFB (128M words ?72 bits, 2 Banks)

File Size 227.74K  /  19 Page

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    AS4SD4M16DG-10/IT AS4SD4M16DG-10/XT AS4SD4M16DG-8/IT AS4SD4M16DG-8/XT

Austin Semiconductor
Part No. AS4SD4M16DG-10/IT AS4SD4M16DG-10/XT AS4SD4M16DG-8/IT AS4SD4M16DG-8/XT
OCR Text .................................. 11 Auto Refresh .......................................................................... 11 Self Refresh ....Row Activation ............................................................ 12 Reads ..................
Description 4 Meg x 16 SDRAM Synchronous DRAM Memory

File Size 1,152.75K  /  50 Page

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