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AD8401 HFS22 DA0295 EE08165 A02018 ULN2204 KT865 12200
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  10adc Datasheet PDF File

For 10adc Found Datasheets File :: 199    Search Time::3.265ms    
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    2N3507A 2N3507AL 2N3507L 2N3506AL

Microsemi Corporation
Part No. 2N3507A 2N3507AL 2N3507L 2N3506AL
OCR Text ...-base breakdown voltage i e = 10adc v (br)ebo 5 vdc on characteristics (3) forward-current transfer ratio i c = 500madc, v ce = 1vdc 2n3506 2n3507 h fe 50 35 250 175 forward-current transfer ratio i c = 1.5adc...
Description NPN MEDIUM POWER SILICON TRANSISTOR

File Size 87.24K  /  2 Page

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    LRC[Leshan Radio Company]
Part No. MMBT2907AWT1
OCR Text ...-Base Breakdown Voltage (I E = -10adc, I C = 0) Base Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) Collector Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 s, ...
Description General Purpose Transistor(PNP Silicon)

File Size 50.17K  /  2 Page

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    Leshan Radio Company, Ltd.
LRC[Leshan Radio Company]
Part No. LMBT5401LT1G LMBT5401LT1
OCR Text ...r-BAse Breakdown Voltage (I E= -10adc,I C=0) Collector Cutoff Current (V CB = -120 Vdc, IE= 0) (V CB = -120 Vdc, IE= 0, T A=100 C) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. LMBT5401LT1-1/5 LESH...
Description High Voltage Transistor 高压晶体

File Size 102.29K  /  5 Page

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    MJ10015-D

ON Semiconductor
Part No. MJ10015-D
OCR Text ... = 250 vdc, i c = 20 a, i b1 =10adc v be( ff) = 5 vdc t =25 m s ????? ????? t r ???? ???? e ??? ??? 0.3 ???? ???? 1.0 ??? ??? m s ?????? ?????? storage time ?????????????? ?????????????? i b1 = 1.0 adc, v be(off) = 5 vdc, t p = 25 m s...
Description SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode

File Size 97.25K  /  8 Page

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    NTLTD7900Z-D

ON Semiconductor
Part No. NTLTD7900Z-D
OCR Text ...= 4.5 vdc, v dd = 10 vdc, i d =10adc r g =91 ) t r 1.17 2.0 turnoff delay time i d = 1.0 adc, r g = 9.1 ) (note 2) t d(off) 1.87 3.0 fall time (note 2) t f 4.8 7.0 gate charge (v gs = 4.5 vdc, i d = 6.5 adc, q t 12 18 nc (v gs...
Description Power MOSFET 9 Amps, 20 Volts, Logic Level N-Channel Micro-8 Leadless

File Size 74.02K  /  8 Page

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    MJW16010A-D MJW16010A

ON Semiconductor
Part No. MJW16010A-D MJW16010A
OCR Text ...fall time ???????? ???????? (i =10adc ??????? ??????? (t j = 100 c) ????? ????? t fi ???? ???? e ??? ??? 50 ???? ???? 250 ??? ??? ?????? ?????? crossover time ???????? ???????? (i c = 10 adc, i b1 = 1.3 adc, ??????? ??????? ( j ) ?????...
Description    NPN Silicon Power Transistors
NPN Silicon Power Transistors 1 kV SWITCHMODE Series

File Size 161.86K  /  12 Page

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    MTD1N50E-D

ON Semiconductor
Part No. MTD1N50E-D
OCR Text ... 141 ns (see figure 14) (i s =10adc v gs = 0 vdc t a 82 (i s = 1.0 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 58.5 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 0.65 m c internal package inductance internal d...
Description Power MOSFET 1 Amp, 500 Volts N-Channel DPAK

File Size 119.68K  /  12 Page

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    MTD1P40E-D

ON Semiconductor
Part No. MTD1P40E-D
OCR Text ...covery time t rr 175 ns (i s =10adc v gs = 0 vdc t a 125 (i s = 1.0 adc, v gs = 0 vdc, di s /dt = 100 a/ m s) t b 52 reverse recovery stored charge di s /dt = 100 a/ m s) q rr 1.2 m c 3. pulse test: pulse width 300 m s, d...
Description Power MOSFET 1 Amp, 400 Volts P-Channel DPAK

File Size 113.96K  /  12 Page

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For 10adc Found Datasheets File :: 199    Search Time::3.265ms    
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