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  10a- Datasheet PDF File

For 10a- Found Datasheets File :: 33327    Search Time::0.86ms    
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    10N70-Q

Unisonic Technologies
Part No. 10N70-Q
OCR Text ... t d ( on ) v dd =350v, i d =10a, r g =25 ? (note 1, 2) 60 80 ns turn-on rise time t r 110 140 ns turn-off delay time t d ( off ) 300 340 ns turn-off fall time t f 150 180 ns total gate charge q g v ds =560v, i d =10a, v...
Description N-CHANNEL POWER MOSFE

File Size 209.51K  /  6 Page

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    10N70-C

Unisonic Technologies
Part No. 10N70-C
OCR Text ...emperature 3. l = 3mh, i as = 10a, v dd = 50v, r g = 25 ? starting t j = 25c 4. i sd 9.5a, di/dt 200a/ s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol rating unit junction to ambient ja 62.5...
Description N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

File Size 220.26K  /  6 Page

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    EMZ7T2R

ROHM
Part No. EMZ7T2R
OCR Text ...reakdown voltage bv cbo i c = 10a 15 - - v collector-emitter breakdown voltage bv ceo i c = 1ma 12 - - v emitter-base breakdown voltage bv ebo i e = 10a 6 - - v collector cut-off current i cbo v cb = 15v - - 100 na emitter cut-off c...
Description PNP NPN Low VCE(sat) Transistor

File Size 1,497.27K  /  12 Page

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    CT Micro International ...
Part No. CTL240NS10-T52
OCR Text ... 25m , at v gs = 10v, i d = 10a r ds(on) 33m , at v gs = 5v, i d = 10a ? ?? ? continuous d rain current at t c =25 i d = 24a ? ?? ? advanced high cell density trench technology ? ?? ? rohs compliance & halogen free ...
Description N-Channel Enhancement MOSFET

File Size 813.15K  /  11 Page

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    American Microsemiconductor Inc.
Part No. BDV67ABDV67BBDV67C
OCR Text ...: v ce(sat)= 2.0v(max.)@ i c = 10a ? complement to type bdv66/a/b/c applications ? designed for audio output stages and general a mplifier and switching applications absolute maximum ratings(t a =25 symbol parame...
Description BDV67A BDV67B BDV67C

File Size 466.20K  /  2 Page

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    Advanced Power Electron...
Part No. AP9435GH-HF AP9435GH-HF-16 AP9435GJ-HF
OCR Text ...-resistance 2 v gs =-10v, i d =-10a - - 50 m ? v gs =-4.5v, i d =-5a - - 90 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-10a - 10 - s i dss drain-source leakage curre...
Description RoHS Compliant & Halogen-Free

File Size 104.78K  /  5 Page

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    Advanced Power Electron...
Part No. AP9435GH-HF
OCR Text ...-resistance 2 v gs =-10v, i d =-10a - - 50 m , source-drain...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 407.13K  /  6 Page

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    Peregrine Semiconductor
Part No. PE99155
OCR Text ...= 5v and output currents up to 10a continuous. this single-chip solution is perfect for hi-rel applications and delivers peak efficiency exceeding 93%. a minimal external component count and high switching frequency enables > 10 w/in 2 ...
Description Radiation Hardened UltraCMOS Monolithic Point-of-Load Synchronous Buck Regulator with Integrated Switches

File Size 463.84K  /  15 Page

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    Microchip
Part No. PL611S-02-P88GI-R PL611S-02-Q99GC PL611S-02-Q99GC-R
OCR Text ...) input, or clk1 output. ? <10a current consumption with pdb active. ? single 1.8v to 3.3v, 10% power supply ? operating temperature range from -40 ? c to 85 ? c ? available in 6-pin dfn and sot23 green/rohs compliant package...
Description Clock and Timing - Clock Generation

File Size 395.12K  /  8 Page

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