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  100v.3a Datasheet PDF File

For 100v.3a Found Datasheets File :: 2668    Search Time::1.328ms    
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    APT10057WVR

ADPOW[Advanced Power Technology]
Part No. APT10057WVR
OCR Text ...VOLTAGE (VOLTS) 20 16 VDS=100V 12 VDS=200V 8 VDS=500V 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTA...
Description POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.75K  /  4 Page

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    HA7-2640-2 HA7-2645-5 HA2-2640-2 HA2-2645-5 HA-2645 HA-2640 FN2904

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HA7-2640-2 HA7-2645-5 HA2-2640-2 HA2-2645-5 HA-2645 HA-2640 FN2904
OCR Text .... . . . . . . . . . . . . . . . 100V Differential Input Voltage Range . . . . . . . . . . . . . . . . . . . . . . . . 37V Output Current . . . . . . . . . . . . . . . . . . . . Full Short Circuit Protection Thermal Information Thermal R...
Description 4MHz, High Supply Voltage Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 4 MHz BAND WIDTH, MBCY8
4MHz, High Supply Voltage Operational Amplifiers OP-AMP, 6000 uV OFFSET-MAX, 4 MHz BAND WIDTH, CDIP8
4MHz/ High Supply Voltage Operational Amplifiers
From old datasheet system

File Size 88.51K  /  6 Page

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    IRL610 IRL610A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRL610 IRL610A
OCR Text ...S=25V,f =1MHz See Fig 5 VDD=100V,ID=3.3A, RG=22 See Fig 13 VDS=160V,VGS=5V, ID=3.3A (4) (5) See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Sour...
Description Advanced Power MOSFET

File Size 233.69K  /  7 Page

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    HTIP122

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HTIP122
OCR Text ...tions IC=1mA, IE=0 IC=100mA VCB=100V VCE=50V VEB=5V IC=3A, IB=12mA IC=5A, IB=20mA IC=3A, VCE=3V IC=0.5A, VCE=3V IC=3A, VCE=3V VCB=10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Darlington Schematic C B R1 R2 E HT...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 38.81K  /  4 Page

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    IRF610B IRF610BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF610B IRF610BFP001
OCR Text ... VDS = 40V 10 400 VDS = 100V VDS = 160V VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 300 Ciss Coss 6 200 4 Crss 100 Notes : 1. VGS = 0 V 2. f = 1 MHz 2 Note : ID = 3.3 A 0 -1 10 0 10 0 ...
Description 200V N-Channel B-FET / Substitute of IRF610 & IRF610A
200V N-Channel MOSFET

File Size 864.32K  /  10 Page

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    IRF610 FN1576

INTERSIL[Intersil Corporation]
Part No. IRF610 FN1576
OCR Text ...0V, ID = 1.6A (Figure 12) VDD = 100V, ID 3.3A, RG = 24, RL = 30 MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 14) Gate Charge is Essential...
Description 3.3A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 54.69K  /  7 Page

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    IRF630N IRF630NL IRF630NS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF630N IRF630NL IRF630NS
OCR Text ... = 160V 17 VGS = 10V --- VDD = 100V --- ID = 5.4A ns --- RG = 13 --- RD = 18 D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 -...3A I D , Drain-to-Source Current (A) 10 TJ = 175 C 1 TJ = 25 C 0.1 4.0 V DS =...
Description Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)

File Size 152.79K  /  11 Page

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    IRFP150N IRFP150

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFP150N IRFP150
OCR Text ... Avalanche Rated D VDSS = 100V RDS(on) = 0.036W G S Description Fifth Generation HEXFETs from International Rectifier utilize a...3A 1 Q 9 3 0 2 D A TE C O D E (Y YW W ) YY = YEAR W W W EEK WORLD HEADQUARTERS: 233 Kansas St., E...
Description Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)\u003d 0.035W,身份证\u003d 42A条)

File Size 130.84K  /  8 Page

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    L3100B L3100B1 3025

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. L3100B L3100B1 3025
OCR Text ...0 mA Type min. max. IGN @ VAC = 100V min. max. VRGN @ IG = 1mA min. IGP @ VAC = 100V max. V L3100B/B1 Note 1 : Note 2 : V 1.8 mA 30 mA 200 V 0.7 mA 150 0.6 See the reference test circuits for IH, IBO and VBO paramet...
Description Overvoltage and Overcurrent Protection for Telecom Line(用于电信线路的过流和过压保护)
From old datasheet system

File Size 60.07K  /  8 Page

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    MJD31 MJD31C MJD31CITU

FAIRCHILD[Fairchild Semiconductor]
Part No. MJD31 MJD31C MJD31CITU
OCR Text ...roduct VCE = 40V, VBE = 0 VCE = 100V, VBE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 3A IC = 3A, IB = 375mA VCE = 4A, IC = 3A VCE = 10V, IC = 500mA 3 25 10 20 20 1 50 1.2 1.8 V V MHz A A mA VCE = 40V, IB = 0 VCE = 60V, IB = 0 50 ...
Description General Purpose Amplifier Low Speed Switching Applications
NPN Epitaxial Silicon Transistor

File Size 48.31K  /  5 Page

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