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Alpha & Omega Semiconductor
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| Part No. |
AOK5N100
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| OCR Text |
...y without notice. i f =5a,di/dt=100a/ s,v ds =100v body diode reverse recovery charge i f =5a,di/dt=100a/ s,v ds =100v turn-off fall time ...800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance ch... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
298.78K /
5 Page |
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it Online |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 SGB15N120 SGP15N120
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| OCR Text |
... 30A 20A 10A 0A 10Hz TC=110C
100a
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50s
TC=80C
200s
1A
1ms
Ic
D...800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0... |
| Description |
Fast S-IGBT in NPT-Technology
Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技
IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
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| File Size |
448.47K /
12 Page |
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it Online |
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Mitsubishi Electric Corporation
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| Part No. |
CM50TF-28H
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| OCR Text |
... t j = 25 c i c = 20a i c = 100a i c = 50a gate-emitter voltage, v ge , (volts) collector current, i c , (amperes) transfer character...800v v cc = 600v i c = 50a emitter current, i e , (amperes) reverse recovery time, t rr , (ns) r... |
| Description |
IGBT Modules:1400V
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| File Size |
61.17K /
4 Page |
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it Online |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
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| Part No. |
STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC80Z P6NC80
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| OCR Text |
...mber 2002
(1)ISD 5.4A, di/dt 100a/s, VDD V(BR)DSS, Tj TJMAX width Limited by maximum temperature allowed 1/13
STP6NC80Z/FP/STP6NC80Z-1
THERMAL DATA
TO-220 / DPAK / IPAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Th... |
| Description |
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800v - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800v 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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| File Size |
509.38K /
13 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF5N100
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| OCR Text |
...e recovery charge i f =5a,di/dt=100a/ s,v ds =100v turn-off fall time body diode reverse recovery time i f =5a,di/dt=100a/ s,v ds =100v a....800v i d =5a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance ch... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
348.23K /
6 Page |
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it Online |
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ST Microelectronics
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| Part No. |
STB6NC80Z
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| OCR Text |
...ure 150 c (1)i sd 5.4a, di/dt 100a/s, v dd v (br)dss ,t j t jmax . (*)pulse width limited by maximum temperature allowed to-220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220) 1 3 d2pak
stp6nc80z/fp/stp6nc80z-1 2/13 thermal data avalanc... |
| Description |
N-CHANNEL Power MOSFET
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| File Size |
442.10K /
13 Page |
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it Online |
Download Datasheet |
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Infineon Technologies Corporation
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| Part No. |
SGP15N120
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| OCR Text |
... 30A 20A 10A 0A 10Hz TC=110C
100a
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
50s
TC=80C
www.DataSheet4U.com
200...800v, VGE = +15V/0V, RG = 33)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0... |
| Description |
Fast S-igbt in Npt-technology
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| File Size |
490.07K /
12 Page |
View
it Online |
Download Datasheet |
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