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  0.8-6ghz Datasheet PDF File

For 0.8-6ghz Found Datasheets File :: 912    Search Time::2ms    
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    TriQuint Semiconductor,Inc.
Part No. TGA2925-SG
OCR Text ... Typical Bias Conditions: 8 V @ 0.75 A (Quiescent) 0.5 m HFET Technology 2 lead Cu-alloy base package 802.16 and WiMax S-Band Power Amplifiers Primary Applications Product Description The TGA2925-SG HPA provides 11 dB of gain, 5.6 W ...
Description 5.6 Watt 3.5GHz Packaged HPA

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    SZP-3026Z

List of Unclassifed Manufacturers
ETC
Part No. SZP-3026Z
OCR Text ...B V mA mA 415 10 6 Min. 2700 32.0 10.3 33.5 11.8 26.0 -44 5.9 14 9 0.9 to 2.2 460 2.3 10 12 510 -41 Typ. Max. 3800 Key Specifications Symbol fO P1dB S21 Pout IM3 NF IRL ORL Vdet Range Icq IVPC Ileak Rth, j-l Parameters: Test Conditions,...
Description 2.7-3.8GHz 2W InGaP Amplifier

File Size 404.91K  /  8 Page

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    WJ Communications
Part No. AP562
OCR Text ...switching speed: 50% ttl to 100/0% rf. 4. vpd used for device power down. (low=rf off) 5. capable of handling 10:1 vswr @ 12 v dc , 2....8.7 c / w operation of this device above any of th ese parameters may cause permanent damage. ...
Description 3.3 - 3.8 GHz WiMAX 8W Power Amplifier

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    Toshiba
Part No. TMD3438-1
OCR Text ...el Signal dB mA dB dB 10 10 8.0 500 9.0 550 G1dB SYMBOL f P1dB VDD=7.5V VGG=-5.0V dB 29.0 CONDITION UNIT GHz dBm MIN. 3.4 29.0 TYP. MAX. 3.8 u u The information contained herein is presented only as a guide for the appli...
Description Microwave Power MMIC Amplifier

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    TOSHIBA[Toshiba Semiconductor]
Part No. TIM8596-15
OCR Text ... A % VDSxIDSxRth(c-c) C MIN. 41.0 6.0 TYP. MAX. 42.0 7.0 4.5 31 5.5 100 add Tch ELECTRICAL CHARACTERISTICS ( Ta= 25 C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage ...
Description MICROWAVE POWER GaAs FET

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    ETC[ETC]
Part No. TC2571
OCR Text ...kdown Voltage: BVDGO 15 V Lg = 0.35 m, Wg = 2.4 mm 100 % DC Tested Low Cost Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2571 is ...8 V, IDS = 300 mA Power Gain at 1dB Gain Compression , f = 6GHz VDS = 8 V, IDS = 300 mA Intercept Po...
Description 1W Low-Cost Packaged PHEMT GaAs Power FETs

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    SIRENZA[SIRENZA MICRODEVICES]
Part No. SZP-3026Z
OCR Text ...e for 802.16 equipment in the 3.0-3.8GHz bands. It can run from a 3V to 6V supply. It is prematched to ~5 ohms on the input for broadband pe...8 9.0 3.3GHz 12.4 33.9 26.5 580 21.8 9.0 3.4GHz 12.4 33.6 26.5 580 20.6 10.0 3.5GHz 12.2 33.2 26.2 5...
Description 3.0-3.8GHz 2W InGaP Amplifier

File Size 374.87K  /  10 Page

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    MAXIM - Dallas Semiconductor
Part No. MAX2683 MAX2684
OCR Text ..................................-0.3v to +6.0v ifout+, ifout-, enx2 , bias to gnd .......-0.3v to (v cc + 0.3v) rfin input power (50 ? sourc...8 6.7 8.0 db input 1db compression point +0.8 dbm input third-order intercept point +8.8 dbm input s...
Description 3.5GHz Downconverter Mixers with Selectable LO Doubler

File Size 300.46K  /  17 Page

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    VMMK-2503-TR1G VMMK-2503-BLKG

AVAGO TECHNOLOGIES LIMITED
Part No. VMMK-2503-TR1G VMMK-2503-BLKG
OCR Text ... systems. wlp 0402, 1mm x 0.5mm x 0.25 mm attention: observe precautions for handling electrostatic sensitive devices. esd machine mo...8. total current [1] figure 10. noise figure over vdd [1] figure 12. output p1db over vdd [1] not...
Description 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package

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    SZA-3044Z SZA-3044

List of Unclassifed Manufacturers
ETC[ETC]
Part No. SZA-3044Z SZA-3044
OCR Text ...Bm Min. 2700 29.5 28.5 23 22 31.0 30.0 25 24 24 -40 5.0 12 7 15 10 0.9 to 2.1 185 220 2.7 10 22 100 255 -37 27 26 Typ. Max. 3800 Function...8 GHz 5V Power Amp Pin Out Description Pin # 1,2,4,5,7, 9,11,13,1 5,17,19 6 Function N/C Descrip...
Description 2.7-3.8GHz 5V 1W Power Amplifier

File Size 391.92K  /  8 Page

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