| |
|
 |
SamHop Microelectronics...
|
| Part No. |
STS8213
|
| OCR Text |
...d r ds(on) (m ) max 20v 7a 18.0 @ vgs=3.1v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount...7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain curren... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
|
| File Size |
108.35K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SamHop
|
| Part No. |
STS8212
|
| OCR Text |
... junction-to-ambient r ja ver 1.0 www.samhop.com.tw mar,09,2012 1 details are subject to change without notice. a t a =25 c esd protected. ...7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
| File Size |
102.86K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Peregrine Semiconductor
|
| Part No. |
PE4280MLIAA PE428014 PE4280-14
|
| OCR Text |
...? low insertion loss: typically 0.5 db at 5 mhz, 1.1 db at 1 ghz ?? high input ip3: 50 dbm ?? cmos two-pin control ?? single +3 v supply...7 4 gnd ground 8 1 rfc common 9 4 gnd ground 10 gnd ground 11 gnd ground 12 4 gnd gro... |
| Description |
75 SPDT CATV UltraCMOS Switch 5 MHz - 2.2 GHz
75 Ω SPDT CATV UltraCMOS
75 Ω SPDT CATV UltraCMOS?
|
| File Size |
884.81K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics...
|
| Part No. |
STS8217
|
| OCR Text |
...d 2 t a =70 c 5.6 a t a =70 c 0.8 w dual n-channel enhancement mode field effect transistor g r e r r p p r p p o r r o e ...7 ns t r 1.6 ns t d(off) 4.8 ns t f ns gate-drain charge v ds =10v,v gs =0v switching characteristic... |
| Description |
Super high dense cell design for low RDS(ON).
Dual N-Channel Enhancement Mode Field Effect Transistor
|
| File Size |
102.73K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics
|
| Part No. |
STS8215
|
| OCR Text |
... junction-to-ambient r ja ver 2.0 www.samhop.com.tw aug,04,2011 1 details are subject to change without notice. a t a =25 c esd protected. ...7 v 2.5 v 0.01 0 0.1 100 10 1 2.5 2 1.5 1 0.5 v gs - gate to source voltage - v i d - drain current ... |
| Description |
Dual N-Channel Enhancement Mode Field Effect Transistor
|
| File Size |
103.65K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
SamHop Microelectronics
|
| Part No. |
STT622S
|
| OCR Text |
...-continuous -pulsed b a ver 1.0 www.samhop.com.tw jul,30,2010 1 details are subject to change without notice. t a =25 c w p d c -55 to 1...7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward volta... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
|
| File Size |
131.94K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
